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Contextual Info: _ _ CERMETEK MICROELEC TR ONIC S . . . . 3fiE D • „ _ Jl _ _ 2005603 O O O i n b 1 WCER CH1811 Data Access Arrangement DAA Registered Telephone Line Interface _ T-ns-yi-os _ INTRODUCTION FEATURES The CH1811 DAA module provides complete DAA (Data Access
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ch181145vrm |
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1 henry INDUCTOR
Abstract: handsfree phone MC34018 1n4004 motorola diode DIODE 1N4004 mic mc34018 AN957 1N4004S N4O04 MC34011A MC34018 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR ^ APPLICATION NOTE A N957 In terfacin g The S peakerphone To The M C 3 4 0 1 0 /1 1 /1 3 Speech N etw o rks Prepared by Dennis Morgan Bipolar Analog IC Division IN TR O D U C TIO N Interfacing the MC34018 speakerphone circuit to the
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mc34018mc34010mc34011mc34013+9an9571 henry inductorhandsfree phone mc340181n4004 motorola diodediode 1n4004 mic1n4004sn4o04mc34011amc34018 equivalent
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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od-80od-323ot-23ot-89+13ot-143ot-223ot-323triac 97a6s0805bh13003 transistor to220 equivalenttriacs bt 804 600vtriac bt 808 600cdiode sot-23 marking 15dzener diode 1n ph 486bs smd transistorz0409mf equivalentbt 808 600c
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L4998
Abstract: b/w tv schematics smps circuit diagram of 300W variac used as a battery charger 12 VOLT 10 AMP smps circuit diagrams flyback smps 300w e cores transformer gate drive circuit for interleaved active clamp flyback forward converter L4990 btw 70.200 transistor ge c137
Contextual Info: T L4990 L4990A / PR IM AR Y C O N TR O LLER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ . CURRENT-MODE CONTROL PWM SWITCHING FREQUENCY UP TO 1MHz LOW START-UP CURRENT < 0.45mA HIGH-CURRENT OUTPUT DRIVE SUITABLE FOR POWER MOSFET 1A FULLY LATCHED PWM LOGIC WITH DOU
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l4990l4990a100nsdip16+11s016wbcd60iil4998b/w tv schematicssmps circuit diagram of 300wvariac used as a battery charger12 volt 10 amp smps circuit diagramsflyback smps 300w e cores transformergate drive circuit for interleaved active clamp flyback forward converterbtw 70.200 transistorge c137
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Contextual Info: NEW PRODUCT CERMETEK MIC ROE LECTRONICS Cermetek m ic ro e le c tr o n ic s 52E P • 2005flD3 DOD1ESO 1 6 ? B K E R CH1789-ND - V.22 bis/2400 bps Ultra Small Modem -svos With Send/Receive Fax Modem INTRODUCTION FEATURES: The CH1789-ND is a very small, low profile 2400 bps modem
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2N2222A st
Abstract: 2N2219A st st 2n2222a 2N2222A TO-18 2N2222a 2N2219A tr/U/2N2219A st
Contextual Info: 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2219A and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to
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2n2219a2n2222a500ma2n2222a st+42n2219a stst 2n2222a2n2222a to-18tr/u/2n2219a st
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2N2222A TO-18
Abstract: 2N2222A 2N2222A st 2N2219A Transistor 2N2222A 2N2222A Schematic symbol BR 2N2222A NPN 2n2222a transistor Transistor 2N2219A st 2n2222a
Contextual Info: 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2219A and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to
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2n2219a2n2222a500ma2n2222a to-18+72n2222a sttransistor 2n2222a2n2222a schematic symbolbr 2n2222a npn2n2222a transistortransistor 2n2219ast 2n2222a
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Contextual Info: CRO 2N 2907 2N 2 9 07A PN 2907 PN2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY.
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pn2907a2n29072n2907apn2907+42n22222n2222apn2222pn2222a
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2N2222A TO-18
Abstract: 2N2222A Schematic symbol 2N2219A 2N2222A 2n2222a transistor BR 2N2222A NPN st 2n2222a 2N2222A st f 2n2222a Transistor 2N2219A
Contextual Info: 2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 for 2N2219A and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to
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2n2219a2n2222a500ma2n2222a to-18+72n2222a schematic symbol2n2222a transistorbr 2n2222a npnst 2n2222a2n2222a stf 2n2222atransistor 2n2219a
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2N2219A
Abstract: 2N2222A TO-18 st 2n2222a 2N2222A Transistor 2N2222A 2N2222A st BR 2N2222A NPN Transistor 2N2219A 2n2222a STMICROELECTRONICS 2N2222A Schematic symbol
Contextual Info: 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2219A and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to
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2n2219a2n2222a500ma2n2222a to-18+7st 2n2222atransistor 2n2222a2n2222a stbr 2n2222a npntransistor 2n2219a2n2222a stmicroelectronics2n2222a schematic symbol
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2N2222A
Contextual Info: 2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 for 2N2219A and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to
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Transistor 2N2222A
Abstract: 2N2222A Data Sheet 2N2218A-2N2219A-2N2221A-2N2222A 2N2222A Schematic symbol st 2n2222a 2N2222A TO-18 2n2222a transistor 2n2222a datasheet 2N2218A 2N2222A
Contextual Info: 2N2218A-2N2219A 2N2221A-2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2218A and 2N2219A and in Jedec TO-18 (for 2N2221A and 2N2222A) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation
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2n2218a-2n2219a2n2221a-2n2222a2n2218a2n2219a+102n2221a2n2222atransistor 2n2222a2n2222a data sheet2n2218a-2n2219a-2n2221a-2n2222a2n2222a schematic symbolst 2n2222a2n2222a to-182n2222a transistor2n2222a datasheet
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2N2222A 331
Abstract: 2n2222 h 331 transistors 2n2222 -331 2n2222 a 331 2n2222 331 transistors 2n2222 - 331 2n2222 h 331 2n2222+h+331+transistors 2n2222+a+331 2n2222a
Contextual Info: N AflER PHILIPS/DISCRETE b'lE D bb53c131 QDEAQfibi T5D I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-18 metal envelope with the collector connected to the case. They are primar ily intended for high speed switching. The 2N2222 is also suitable fo r d.c. and v.h.f./u.h.f. amplifiers.
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bb53c2n22222n2222a7z85736+92n2222a 3312n2222 h 331 transistors2n2222 -3312n2222 a 3312n2222 331 transistors2n2222 - 3312n2222 h 3312n2222+h+331+transistors2n2222+a+331
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2N2901
Abstract: npn 2907a EBC 2N2907 PN2907A FN2907 PH2907 2N2222 2N2907A LB-15N PN2907
Contextual Info: CRO 2N 2 9 0 7 2 N 2 9 07A PN 2 9 0 7 PN 2907A CASE TO-18 THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,
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2n2907a2n2907pn2907pn2907a+92n22222n2222apn2222pn2222a2n2901npn 2907a ebcfn2907ph2907lb-15n
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tl 2n2222
Abstract: 2N2222 2n2222 ti 2N2222 npn small signal current gain 2N2222 circuit output impedance of 2N2222 2N2222, 2N2222A Transistor 2N2222A 2n2222 test circuit Metal 2n2222
Contextual Info: N AMER PHILIPS/DISCRETE b'IE D • bbS3T31 OOEÛÜflb 12G I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a T O -18 metal envelope w ith the collector connected to the case. They are primar ily intended for high speed switching. The 2 N 2 2 2 2 is also suitable for d.c. and v.h.f./u.h .f. amplifiers.
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bbs3t312n22222n2222a100ms+9tl 2n22222n2222 ti2n2222 npn small signal current gain2n2222 circuitoutput impedance of 2n22222n2222, 2n2222atransistor 2n2222a2n2222 test circuitmetal 2n2222
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Contextual Info: 30E D *57 6 S • T 'i S 'I S a ? G 031115 S C S -T H O M S O N H L U m *! 3 ■ 2 N 2 2 1 8 A -2 N 2 2 1 9 A 2 N 2 2 2 1 A -2 N 2 2 2 2 A S-THOMSON H IG H SP EE D SWITCHES DESC RIPTIO N The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec
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2n2218a2n2219a2n2221a2n2222a+22n2218a/2n2219a2n2221a/2n2222a
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2N2907
Abstract: PN2907 PN2907A J 2N2907 2N2222 2N2222A 2N2907A PN2222 PN2222A PNP pN2907
Contextual Info: CASE TO-18 CASE T0-92A CBE EBC 2N2907 2N2907A PN2907 PN2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,
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2n2907apn2907a2n2907pn2907+62n22222n2222apn2222pn2222aj 2n2907pnp pn2907
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FN2222A
Abstract: RT2222
Contextual Info: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.
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2n22222n2222apn2222apn2222+52n29072n2907apn2907fn2222art2222
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PN 2n2222A
Abstract: 3n2222 2N2222 2K2222 3N2222A 2N2222-PN2222 ST 2n2222 2K222 pn 2N22 VBB-23
Contextual Info: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.
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2n22222n2222apn2222apn2222+122n29072n2907apn2907pn 2n2222a3n22222k22223n2222a2n2222-pn2222st 2n22222k222pn 2n22vbb-23
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1N914
Abstract: 2N2222 AV2222
Contextual Info: @vic AV2222 Amplifier Transistors 2N2222 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 75 Vdc Emitter – Base Voltage VEBO 6.5 Vdc Collector Current — Continuous
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2N2222A TO-92
Abstract: 2n2222a to 92 2N2907A TO-92 Transistor 2N2222A 1N916 2N2222A 2N2907A
Contextual Info: 2N2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features Epitaxial Planar Die Construction Complementary NPN Type Available 2N2222A TO–92 Ideal for Medium Power Amplification and Switching
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2n2907a2n2222a01-jun-2002270typ+6050typ2n2222a to-922n2222a to 922n2907a to-92transistor 2n2222a1n916
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2N2222A motorola
Abstract: 2n2222 motorola 2N2219A MOTOROLA motorola 2N2219 2N2219 MOTOROLA motorola 2n2222 motorola 2N2219A equivalent transistor 2N2222 motorola 2N2222A 2n2222
Contextual Info: MOTOROLA Order this document by 2N2219/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 2 BASE LAST SHIP 21/03/00 2N2219 2N2219A* 2N2222 2N2222A* NPN Silicon *Motorola Preferred Devices 1 EMITTER MAXIMUM RATINGS Symbol 2N2219 2N2222 2N2219A
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2n2219/d2n22192n2219a2n2222+102n2222a2n2222a motorola2n2222 motorola2n2219a motorolamotorola 2n22192n2219 motorolamotorola 2n2222motorola 2n2219aequivalent transistor 2n2222motorola 2n2222a
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2n2222a transistor
Abstract: transistor 2n2222a to-92
Contextual Info: 2N2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features Epitaxial Planar Die Construction TO–92 Complementary PNP Type Available 2N2907A Ideal for Medium Power Amplification and Switching
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2n2222a2n2907a01-jun-2002270typ+3050typ2n2222a transistortransistor 2n2222a to-92
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Contextual Info: 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2219A and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to
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