TR/TRANSISTOR BI 340 Search Results

transistor bI 340

Abstract: 2N3585
Contextual Info: 2N3585 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3585 is Designed for General Purpose High Voltage Amplifier and Switching Applications. PACKAGE STYLE TO - 66 2.0 A 300 V o m lc < MAXIMUM RATINGS INCHES Pd is s 35 W @ Tc # 25 °C Tj -65 °C to +200 °C

TRANSISTOR BI 340

Abstract: 2sc2774
Contextual Info: , LJnc. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 2SA1170 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- PIN 1.BASE 2.COLLECTOR V(BR)CEo= -200V(Min) • High Power Dissipation

Contextual Info: n z z SGS-THOMSON li!iilD g[Si [llLi ¥MD(gi L9935 TWO-PHASE STEPPER MOTOR DRIVER PRODUCT PREVIEW • 2 X 1 .1 A FULL BRIDGE OUTPUTS ■ INTEGRATED CHOPPING CURRENT REGU­ LATION ■ MINIMIZED POWER DISSIPATION DURING FLYBACK ■ OUTPUT STAGES WITH CONTROLLED

buv62

Contextual Info: 2 3 Ü 2 3 7 0 0 2 0 7 ^ 1 b • n ^ - 3 3 - I S SCS-THOMSON Ä 7# mm i l L iO T T I ^ Ù f f il lD O l r 7 z s c S G S-TH0MS0N B U V 6 2 30E » FAST SWITCHING POWER TRANSISTOR ■ FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND

L9935

Abstract: XX111111
Contextual Info: L9935 TWO-PHASE STEPPER MOTOR DRIVER 2 X 1.1A FULL BRIDGE OUTPUTS INTEGRATED CHOPPING CURRENT REGULATION MINIMIZED POWER DISSIPATION DURING FLYBACK OUTPUT STAGES WITH CONTROLLED OUTPUT VOLTAGE SLOPES TO REDUCE ELECTROMAGNETIC RADIATION SHORT-CIRCUIT PROTECTION OF ALL

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

Contextual Info: L9935 TWO-PHASE STEPPER MOTOR DRIVER 2 X 1.1A FULL BRIDGE OUTPUTS INTEGRATED CHOPPING CURRENT REGU­ LATION MINIMIZED POWER DISSIPATION DURING FLYBACK OUTPUT STAGES WITH CONTROLLED OUTPUT VOLTAGE SLOPES TO REDUCE ELECTROMAGNETIC RADIATION SHORT-CIRCUIT PROTECTION OF ALL

2N3584

Contextual Info: 2N3584 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3584 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE TO - 66 2.0 A 250 V o m lc < MAXIMUM RATINGS INCHES Pd is s 35 W @ Tc # 25 °C Tj -65 °C to +200 °C

germanium transistor ac 128

Abstract: transistor ac 127 AC127 valvo ac128 valvo transistoren transistor ac 132 germanium transistor ac 132 transistor ac 128 ac 127
Contextual Info: N ICH T FÜR N E U E N T W IC K L U N G E N AC 127 GERMANIUM - NPN - NF - TRANSISTOR ftir Endstufen, in Verbindung mit AC 128 oder AC 132 als komplementäres Paar Mechanisehe Daten; Gehäuse: Metall, JEDEC TO-1, 1 A 3 DIN 41 871 Alle Elektroden sind vom Gehäuse isoliert*

TEA5704

Abstract: 38MHZ
Contextual Info: ¿ T T SGS-THOMSON TEA5704 * JM, KfflD ^ [l[L[i g^(Q [iO(gi ADVANCED 4-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR ADVANCE DATA PLAY-BACK MODE - LOW NOISE AND WIDE BAND AMPLIFIERS FOR 4 HEADS •AUTOMATIC OFFSET CANCELLATION BE­ TWEEN THE 2 SELECTED HEADS

Contextual Info: L9935 Two-phase stepper motor driver Features • 2 x 1.1 A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

m21 transistor

Abstract: FLAYBACK L9935
Contextual Info: SGS-TtiOMSON :ILI iriS3©K!lDgl L9935 TWO-PHASE STEPPER MOTOR DRIVER P R O D U C T P R E V IE W • 2 X 1 .1 A FULL BRIDGE OUTPUTS ■ INTEGRATED CHOPPING CURRENT REGU­ LATION ■ MINIMIZED POWER DISSIPATION DURING FLYBACK ■ OUTPUT STAGES WITH CONTROLLED

Contextual Info: L9935 Two-phase stepper motor driver Features • 2 x 1.1 A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation

l9935 spi

Abstract: m21 transistor
Contextual Info: L9935 Two-phase stepper motor driver Feature summary • 2 x 1.1A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation

AX117

Abstract: MAX113ENG
Contextual Info: >HylX IWI 19-1081; Rev 1;8 /96 +3V, 4 0 0 k s p s , 4/ 8- Ch annel , 8- Bi t A D C s w i t h 1 ¡jA P o w e r - D o w n _F e a t u r e s The MAX113/M AX117 are m icroprocessor-com patible, 8-bit, 4-channel and 8-channel ana lo g-to -d igita l c o n ­

m21 transistor

Abstract: MO-166 stepper motor 12v connection transistor hh 004 DC MOTOR SPEED CONTROL USING chopper flyback led driver with pwm dimming transistor hh 004 circuits diagram L9935 L9935013TR
Contextual Info: L9935 Two-phase stepper motor driver Feature summary • 2 x 1.1 A full bridge outputs ■ Integrated chopping current regulation ■ Minimized power dissipation during flyback ■ Output stages with controlled output voltage slopes to reduce electromagnetic radiation

2N6678 motorola

Abstract: Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
Contextual Info: "Tb MOTOROLA SC iXSTRS/R F> 6367254 M OT O R O L A SC CXSTRS/R F DE Jt.3t.72SM OOÛOSlt. 2 96D 60 516 D T-33-13 2IM6648 M O TO RO LA See Page S E M IC O N D U C T O R TECH N ICAL DATA 3-209 N P N Silico n Pow er T ransistors 2N6676 2N6677 2N6678 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are

Contextual Info: BFP 181W NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifier at 4 collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

AM503

Abstract: p63g
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J16018* M JW 16018* D esigner’s Data Sheet N PN Silico n Pow er T ran sistors ‘Motorola Preftrrwl Dovie* 1.5 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in

Contextual Info: b u r r - brown corp HE ] I 1? 313Li5 0014057 1 | T O H I-i \ XTR110 B U R R -B R O W N a 1 XTR110 [ APPLICATIO N S • 4mA TO 20mA TRANSMITTER • SELECTABLE INPUT/OUTPUT RANGES: OV to + 5 V , OV to + 1 0 V Inputs OmA to 20mA, 5mA to 25mA Outputs Other Ranges

BCW61RA

Abstract: bcx71 bcx71rh BCX71C BCW60
Contextual Info: ITT seuicond/ intermetall SGE D 4bô2711 D002bGQ 714 BCW61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. i i” n is 1 ! 4H P- Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,

Contextual Info: 3875081 G E SOLID STATE 01E 19698 D Optoelectronic Specifications- T-V/-S3 HARRIS SEIUCOND SECTOR 37E J> m 4302271 0D271bD fl • HAS A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared E m itting D iodes & NPN Silicon P h o to-T ransistor

Contextual Info: BFP181W NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifier at 4 collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type