TQ64 Search Results

2N5036

Abstract: TRANSISTOR BV 32 2N5035 2N5034 FZJ 101 usaf516es047m 2N5034 package 2N5425 B170000 fzj 165
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

M-8124

Abstract: usaf516es047m usaf517es060m transistor af138 BA109 FZJ 131 2SA314 987T1 988T1 989T1
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

tn-59

Abstract: 2222 NPN N 2222 2N2221 2N2221A 2N2222A 2N2369 2N2906 2N2906A 2N2907
Contextual Info: A/Ietal-Encased SPRAGUE Silicon SEPT T ran sistors HIGH-SPEED, MEDIUM CURRENT Type No. 2N2221 2N2221A 2N2222 2N2222A 2N2369 2N2906 2N2906A 2N2907 2N2907A 2N3115 2N3116 2N3135 2N3136 TN-54 TN-60 TN-62 TN-64 TQ-60 TQ-62 TQ-64 2N1469 2 N1469A 2N2218 2N2218A

2sa648 transistor

Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2SC114 transistor

Abstract: transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

SFT307

Abstract: usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2n1620

Abstract: 2n1958 oms 450 2N1617/I 2N1619 2SC114 SOT1156
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. t * # § 40°c H H TYPE N o. I I M IN . M A X P c ID E R A T E

2SC114 transistor

Abstract: FZJ 131 usaf516es047m PMT222 2SC286 2SC287 2SC430 400M transistor 2SC114 replacement transistor 2SC114
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

ST8034

Abstract: ST8033 SL3015 NS1000 n BC420 2CY38 usaf521es071 NS1001 QD400-78 NS1862
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

C-123

Abstract: mosfet yb
Contextual Info: Advanced SFW/I9644 P o w e r MOSFET FEATURES = -250 V • A v a la n c h e R u g g e d T e c h n o lo g y ■ R u g g e d G a te O x id e T e c h n o lo g y ■ L o w e r In p u t C a p a c ita n c e ■ Im p ro v e d G a te C h a rg e ^ D S o n - ■ E x te n d e d S a fe O p e ra tin g A re a

SY-PQ208-2

Abstract: ACTEL qfp 352 CQ256 CQ208 SI-SX72-ACQ256SFG484 pq208 package SI-SX72ACQ256SFG484
Contextual Info: EIA Standard Board Layout of Soldered Pad for QFP Devices Md e e e Ze Positioning pin holes Z Me e b2 I2 Zd Table 1 contains the board layout soldered pad dimensions for Actel Quad Flat Packs only. If you are using surface mount sockets for prototyping, see table 2 for layout dimensions.

EX256-TQ100

Contextual Info: Revision 10 eX Family FPGAs Leading Edge Performance • 240 MHz System Performance • 350 MHz Internal Performance • 3.9 ns Clock-to-Out Pad-to-Pad Specifications • 3,000 to 12,000 Available System Gates • Maximum 512 Flip-Flops (Using CC Macros)

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Contextual Info: R EM MICROELECTRONIC - MARIN SA EM6626 Ultra Low Power Microcontroller with 4x32 LCD Driver Features ‰ True Low Power ‰ ‰ ‰ Low Supply Voltage 1.2 V to 3.6 V Melody, 7 tones + silence inclusive 4-bit timer Universal 10-bit counter, PWM, event counter ‰

Contextual Info: Revision 5 ex Automotive Family FPGAs Specifications • 3,000 to 12,000 Available System Gates • Maximum 512 Flip-Flops Using CC Macros • 0.22 m CMOS Process Technology • Up to 132 User-Programmable I/O Pins Features • Live on Power-Up • No Power-Up/Down Sequence Required for Supply

2SC114 transistor

Abstract: 2SC114 2N5425 SA2713 2sc107 FZJ 165 ME2001 R117A R67a transistor 2SC114
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

usaf516es047m

Abstract: transistor T01A transistor 2SC114 usaf517es060m usaf516es048m fzj 165 R117A 2SC114 transistor transistor A431 AT344
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

usaf517es060m

Abstract: usaf516es047m usaf516es048m 2SC114 NS477 2SC814 TC236 2N5425 ST6130 ST62
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

MA7805

Abstract: 2N2307 2CY38 germanium low power 150mW ST8034 5E29 NS1862 sl RS40 QD401-78 QD402-78
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

alps lcd 14 pin

Abstract: display lcd 32x4 seg 4h4 1 4x32 lcd alps LCD three and half digit 7 SEGMENT LCD DISPLAY 102H 103H 104H 106H
Contextual Info: R EM MICROELECTRONIC - MARIN SA EM6522 MFP version of EM6622 Ultra Low Power Microcontroller with 4x32 LCD Driver Features Figure 1. Architecture • Low Power • • • • • • • • • • • • • • • • • - 11 µA active mode, LCD On

display lcd 32x4 seg

Abstract: 2x10-bit 10X10 EM6522 EM6622 TQFP64 3x16 11LCD
Contextual Info: R EM MICROELECTRONIC - MARIN SA EM6522 MFP version of EM6622 Ultra Low Power Microcontroller with 4x32 LCD Driver Features Figure 1. Architecture • Low Power • • • • • • • • • • • • • • • • • - 11 µA active mode, LCD On

Contextual Info: EM MICROELECTRONIC - MARIN SA EM6626 Ultra Low Power Microcontroller with 4x32 LCD Driver Features True Low Power 1.8 µA active mode, LCD On 0.4 µA standby mode, LCD Off 0.2 µA sleep mode Figure 1. Architecture @ 3 V, 32 KHz, 25 ºC Low Supply Voltage 1.2 V to 3.6 V

NS1000 n

Abstract: BC420 2CY38 usaf521es071 ST8034 2sc113 NS1000 NS1862 QD400-78 QD402-78
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SC114

Abstract: 2SA647 2SC114 transistor usaf516es047m TRM7015 2N2180 MD14 package 81T2 A249 A298
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I