TPM1 Search Results

Contextual Info: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)

TPM1617

Abstract: TPM1617-8
Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER G aAs FET S E M IC O N D U C T O R TPM1617-8 TECHNICAL DATA FEATURES: • HIGH POWER PidB ~ 3 9 .5 dBm at 1.6 GHz to 1 .7 GHz PARTIALLY ■ HIGH GAIN G“jdB = 13 dB at 1.6 GHz to 1.7 GHz HERMETICALLY SEALED PACKAGE MATCHED TYPE

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-14 High Power GaAs FETs L, S-Band Features • High power - P idB = 42.0 • High gain dBm at 1.8 GHz - G idB = 14.0 dB at 1.8 GHz • Partially m atched type • H erm etically sealed package Unit Min. Typ. Max dBm

TPM1919

Abstract: TPM1919-40
Contextual Info: TPM1919-40 FEATURES: • H IG H PO W ER ■ PARTIALLY M A T C H E D TYPE ■ H E R M E T IC A LL Y SEA LED PACKAGE P-idB = 46. 0 dB m at 1. 9 G H z ■ H IG H GAIN GidB = 13 dB 3t 1. 9 G H z RF PERFO RM AN CE SPEC IFIC A TIO N S Ta = 25 °C C H A R A C TE R IS T IC S

IRS12

Contextual Info: TPM1919-40 PRELIMINARY May 1996 TOSHIBA TPM1919-40 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS SYMBOL Output Power at 1dB Compression Point Pi dB Power Gain at 1dB Compression Point Gl dB Drain Current Power Added Efficiency CONDITION VDS- ÍOV

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 1.8 GHz • High gain - G-idB = 12 dB at 1.8 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-14 High Power GaAs FETs L, S-Band Features • High power - P idB = 42.0 dBm at 1.8 GHz • High gain - G-jdB = 14.0 dB at 1.8 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-40 TECHNICAL DATA FEATURES : • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE PidB = 46.0 dBm at 1.9 GHz ■ HIGH GAIN GidB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C

TPM1919-40

Abstract: SO47 TPM1919-40-311
Contextual Info: TPM1919-40-311 FEA TU RES: • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE P 1dB = 47.0 dB m at 1.9 GHz ■ HIGH GAIN G 1dB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS SYMBOL Output Power at 1dB Compression Point

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDU CTO R TPM1818-14 TECHNICAL DATA FEATURES : • HIGH POWER PARTIALLY MATCHED TYPE ■ p ld B = 41.5 dBm at 1-8 GHz HIGH GAIN HERMETICALLY SEALED PACKAGE G1dB = 12.0 dB at 1.8 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROW AVE SEM ICO NDU CTO R TPM1919—40 TECHNICAL DATA FEATURES : • HIGH POWER ■ HIGH GAIN ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE pidB = 46. 0 dBm at 1. 9 GHz GidB = 13 dB at 1.9 GHz RF PER FO R M A N C E SPEC IFIC A TIO N S Ta = 2 5 °C

Contextual Info: T O S H IB A MICROWAVE POWER G aAs FET M ICROW AVE SEM ICO NDU CTO R TPM1818-30 TECHNICAL DATA FEATURES: • HIGH POWER ■ HIGH GAIN ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE pidB = 44.5 dBm at 1.8 GHz G-idB = ^2 dB at 1.8 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-14 High Power GaAs FETs L, S-Band Features • High power " P-idB = 42.0 • High gain dBm at 1.8 G H Z - G idB = 14.0 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)

HEADER 10X2

Abstract: PTG1 diode u2 40 HEADER 10X2 datasheet rx1 tx1 MC13192 MC9S08GT60 bkgd 10X2A
Contextual Info: 5 4 3 2 1 DLP-RF2 MODULE 1 2 JP1 Reset Defaults D D ANTCTRLA7 U2 32 33 34 35 36 37 38 39 1 2 JP2 A6 ANTCTRLA7 PTA0/KBIP0 PTA1/KBIP1 PTA2/KBIP2 PTA3/KBIP3 PTA4/KBIP4 PTA5/KBIP5 PTA6/KBIP6 PTA7/KBIP7 IRQ 18 19 20 21 ANTCTRLD4 PTD0/TPM1CH0 PTD1/TPM1CH1 PTD3/TPM2CH0

TMD1414-2

Abstract: TGM9398-25 8596-50
Contextual Info: Product Guide 2014 Microwave Semiconductors GaAs MMICs L and S-band Partially Matched Power GaAs FETs Pout vs. Frequency Map 80 49 48 60 TPM2828-60❋ TPM1919-60 40 46 44 ● Output Power vs. Frequency Map GaAs MMICs L and S-band Partially Matched Power GaAs FETs . 3

TPM1617

Abstract: TPM1617-8
Contextual Info: High Power GaAs FET L, S-Band TPM1617-8 FEATURES: • HIGH POWER P ld B = 39.5 dBm at 1.6 GHz to 1 .7GHz ■ PARTIALLY MATCHED TYPE ■ HIGH GAIN GldB = 13 dB at 1.6 GHz to 1.7 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS (Ta = 25°C)

Contextual Info: TPM12/100-5/500 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 12ñ Load Current Max. (A)100m P(D) Max. (W) Nom. Supp (V) Minimum Operating Temp (øC) Maximum Operating Temp (øC) Package StyleModule Mounting StyleT Pinout Equivalence Code7-128

Contextual Info: TPM15/100-5/500 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 15ñ Load Current Max. (A)100m P(D) Max. (W) Nom. Supp (V) Minimum Operating Temp (øC) Maximum Operating Temp (øC) Package StyleModule Mounting StyleT Pinout Equivalence Code7-128

TPM1919-40

Contextual Info: TPM1919-40 PRELIMINARY May 1996 TOSHIBA TPM1919-40 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL CONDITION Ta= 25°C Ì MIN. TYP. 45.0 46.0 dBm 12.0 13.0 dB MAX. UNIT Output Power at 1dB Compression Point Pi dB Power Gain at 1dB Compression Point

TPM1919-40

Contextual Info: T O S H IB A MICROWAVE POWER G aAs FET MICROW AVE SEM ICO NDUCTOR TPM1919-40-311 TECHNICAL DATA FEATURES : • HIGH POWER ■ HIGH GAIN PARTIALLY MATCHED TYPE P-idB = 47.0 dBm at 1.9 G Hz ■ HERMETICALLY SEALED PACKAGE ^idB = 13 dB at 1.9 GHz RF PERFO RM AN CE SPECIFICATIO NS Ta = 2 5 °C

SLB9635TT

Abstract: 8111C Winbond W83627DHG SLB9635TT infineon W83627DHG Infineon SLB9635tt ALC888 via award motherboard VGA 20 PIN LCD MONITOR CABLE CONNECTION DIAGRAM F81216D
Contextual Info: AIMB-210 Intel ATOM Mini-ITX with VGA/LVDS, 6 COM, and Dual LAN Features NEW • Intel® ATOM Mini-ITX motherboard supports N270 1.6 GHz processor • One 200-pin SODIMM up to 2 GB DDR2 533 SDRAM  Supports dual display for VGA, LVDS, and TV-Out  Built with 6 serial ports, 8 USB, CF, 2LAN and TPM1.2 optional

TPM1617-16

Abstract: TPM1617
Contextual Info: TPM1617-16 FEATURES: • HIGH POWER PldB = 42.5 dBm at 1.6 GHz to 1 .7 GHz > PARTIALLY MATCHED TYPE ■ HIGH GAIN GldB = 1 3 d B at 1,6 GHz to 1.7 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS Output Power at 1 dB Com­

TPM1919-60

Abstract: tpm1919 2-16G6A
Contextual Info: MICROWAVE POWER GaAs FET TPM1919-60 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=48.0dBm at 1.96GHz „ HIGH GAIN G1dB=13.0dB at 1.96GHz „ PARTIALLY MATCHED TYPE „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS

tpm1919

Abstract: TPM1919-60
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-60 TECHNICAL DATA FEATURES : • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE P-idB = 48.0 dBm at 1.9 GHz ■ HIGH GAIN G1dB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C