TP4413 Search Results

Contextual Info: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

Contextual Info: PNP TRANSISTORS TO-92/TO-226AA U23 ‘2N ’ an d ‘TP’ DEVIC E TYPES ELECTRICAL CHABACTERISTICS at A = 25°C DC Current Gain ^CBO v CE sat fT >c Max. V(BH)CBO V(SH)OEO Device (mA) Type (V) Max. @ v CB @ 'c (V) (V) (nA) (V) Min. Max. (mA) @ V CE Max. (V)

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

TP2222

Abstract: TP2222A TP2907A TP3116 MPS6566 TP2483 MPS6515 MPS6516 MPS6517 MPS6518
Contextual Info: ^ Econ olin e R P la stic -M o ld e d If H U U C Silicon S E P T R Transistors GENERAL-PURPOSE SMALL-!IIGNAL AMPLIFIERS >oc < o o. _i Type No. Pd D -C C U R R E N T G A IN h fE Lim ts T a = V (BR) V(BR) V(BR) I c b o C onditions VcE(SAT) 25 C C BO CEO E BO

2n5401 2n3906

Contextual Info: PNP TRANSISTORS TO-92/TO-226AA ‘2N ’ a n d ‘T P’ D EV IC E TYPES ELECTRICAL CHARACTERISTICS a l TA, = 2 5 C ^CBO D C C u r r e n t G a in v CE sat 't 'c V (BR)CBO v (BR)CEO v (BH)EBO M a x . @ v CB D e v ic e M ax. Type (m A ) (V) TP2907 500 TP2907A

DIODE 20B2

Abstract: TP4213 TP2658 SHEET15 30B4 diode 37 TV samsung lcd Schematic circuit diagram TP5000 alviso-GM 30B4 BA92-03859A
Contextual Info: SAMSUNG X06 GUO LEI ZHOU JUN DRAW Model Name : PBA Name : PCB Code : Dev. Step : Revision : T.R. Date : CPU : Chip Set : Remarks : CHEN TAO CHECK KEVIN LEE APPROVAL X06 BA92-03859A BA41-00529A MP 1.0 2005-6-25 Dothan Intel Alviso + ICH6-M Internal Gfx. Aquila-So

Contextual Info: SPRAGUE/SENICOND GROUP T3 D • ÖS13SS0 00035=15 8 5 1 4 0 1 9 S P R A G U E ’ S E M I C O N D S / ICS 4 ■ 9 3 D 0 3 5 9 5 J PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS atTA = Z5°C

TP4506

Abstract: TP5000 AR803 TP6244 thermistor SCK D54 TP5056 R767 TP5310 TP6311 TP4765
Contextual Info: 1 2 HD# 0:63 1 1 3 4 N C 5 6 HA#(3:31) C D 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1,4 29 H_REQ#(0:4) 30 31 1 32 2 33 4 35 1,4 36 DBI#(0:3) 1 38 2 39 3 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 1, 4 1 1, 4 1 4 4 1, 4

BC558AP

Abstract: TD401 BSX41 ED1802M LOW-POWER SILICON PNP 2N4917 TED1802L TED1802
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 50 55 60 2SA467G•TM·O 2MA5090 2SA509G·TM·O 2SA509G·O ST8705 2SA608NP 2SA608SP 2N4917 2N5374 BSY59 ED1602D TED1802M ED1802M V741 V741 A5T4062 A8T4062 RN4062 ~~~~8~2 65 70 75 80 2N4062 BC558A

TP3-4141A024M

Abstract: TP3-4121A024M TP4-4141A024M TP3-2131 NP1-638AS-M NP1-628AS-M TP3-2131A024M TP3-2131A NP1-628AS NP1-648AB-M
Contextual Info: Safety Switches NP GP TP More than safety. Safety More than safety. Around the world – the Swabian specialists in motion sequence control for mechanical and systems engineering. Emil Euchner, the company’s founder and inventor of the multiple limit switch, circa 1928.

2n4917

Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =13 D • Ü5DM33Ö OüaBS'iS 3 ■ ALGR S E M I C O N D S / ICS PLASTIC-CASE BIPOLAR TRANSISTORS 93D 03595 j _ PNP Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

TP4213

Abstract: TP2658 30B4 diode DIODE 20B2 diode 30b4 tp4203 TP2923 aLC665 37 TV samsung dvd Schematic circuit diagram 26c4
Contextual Info: SAMSUNG X06 Dothan Intel Alviso + ICH6-M Internal Gfx. Sheet1. Sheet2. Sheet3. Sheet4. Sheet5. Sheet6. Sheet7. Sheet8. Sheet9. Sheet10. Sheet11. Sheet12. Sheet13. Sheet14. Sheet15. Sheet16. Sheet17. Sheet18. Sheet19. Sheet20. Sheet21. Sheet22. Sheet23. Sheet24.

TP2222A

Abstract: ct 60 transistor TP2222 TP5816 TP2906A kd pnp TP2907A tp3061 TP2221 TP2221A
Contextual Info: € # SPRAGUE BIPOLAR TRANSISTORS « BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES TP TRANSISTORS • S m a ll -s ig n a l T O - 9 2 plastic transistors. Su g ge s te d replace­ m e n t s f o r 2 N series d e v i c e s a v a i l a b l e in T O - 5 , T O - 1 8 , T O - 3 9 ,