TP3798 Search Results

Contextual Info: TP3798 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.150 h(FE) Max. Current gain.

BSW45A

Abstract: LOW-POWER SILICON PNP p60n 2SA1299E BC212BP
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 BC212LA BCW86 BCW86 BCW86 2SB637K 2SB710A 2SA891 2SA891 2SA891 2SB621A >= Manufacturer V(BR)CEO fr (V) (Hz) See Index Micro Elecs Semi Inc Advncd Semi

2SA850

Abstract: 2N2216 2N5400 MOTOROLA 2N3064 2SB646A 25M SOT89 motorola bc450 15J1A LOW-POWER SILICON PNP KT214A
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 -15 20 >= NthAmerSemi NthAmerSemi See Index SGS-Ates Hybrid Semi SGS-Ates Semelab Semelab See Index ~~~~~~ Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Semicoa NthAmerSemi Space Power

Contextual Info: SPRAGUE/SENICOND GROUP T3 D • ÖS13SS0 00035=15 8 5 1 4 0 1 9 S P R A G U E ’ S E M I C O N D S / ICS 4 ■ 9 3 D 0 3 5 9 5 J PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS atTA = Z5°C

2n4917

Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =13 D • Ü5DM33Ö OüaBS'iS 3 ■ ALGR S E M I C O N D S / ICS PLASTIC-CASE BIPOLAR TRANSISTORS 93D 03595 j _ PNP Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C