TP252 Search Results
TP252 Datasheets (18)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TP252 | Unknown | Cross Reference Datasheet | Scan | 31.9KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP252 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 34.6KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP252 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 75.54KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2520 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FETs | Original | 28.81KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2520 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FETs | Original | 463.52KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2520N8 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FET | Original | 463.53KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2520N8-G | Microchip Technology | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 200V 0.26A SOT89-3 | Original | 603.6KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2522 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FETs | Original | 28.67KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2522 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FETs | Original | 463.52KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2522N8 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FET | Original | 463.53KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2522N8-G | Supertex | P-Channel Enhancement Mode Vertical DMOS FETs | Original | 581.62KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2522ND | Supertex | P-Channel Enhancement-Mode Vertical DMOS FET | Original | 463.53KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP252A | Unknown | Basic Transistor and Cross Reference Specification | Scan | 52.53KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP252A | Sprague | Semiconductor Data Book 1977 | Scan | 85.56KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP252B | Unknown | Basic Transistor and Cross Reference Specification | Scan | 52.53KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP252B | Sprague | Semiconductor Data Book 1977 | Scan | 85.56KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP252CA | Unknown | Basic Transistor and Cross Reference Specification | Scan | 52.53KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP252CA | Sprague | Semiconductor Data Book 1977 | Scan | 85.56KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TP252 Price and Stock
Microchip Technology Inc TP2520N8-GMOSFET (Metal Oxide) Transistor - P-Channel - 200V Vdss - 260mA (Tj) Id - 1.6W (Ta) - TO-243AA (SOT-89) Package - Surface Mount. |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
TP2520N8-G | 3,897 |
|
Buy Now | |||||||
|
TP2520N8-G | 3,750 | 250 |
|
Buy Now | ||||||
| TP2520N8-G | 2,000 | 2,000 |
|
Buy Now | |||||||
|
TP2520N8-G | Tape & Reel | 4 Weeks | 2,000 |
|
Buy Now | |||||
|
TP2520N8-G | 2,000 | 4 Weeks | 2,000 |
|
Buy Now | |||||
|
TP2520N8-G | Tape & Reel | 2,000 |
|
Buy Now | ||||||
|
TP2520N8-G | Bulk | 12 Weeks | 2,000 |
|
Get Quote | |||||
|
TP2520N8-G | Tape & Reel | 6,000 | 8 Weeks |
|
Buy Now | |||||
|
TP2520N8-G | 4,057 |
|
Get Quote | |||||||
|
TP2520N8-G | 278 |
|
Get Quote | |||||||
OMRON Industrial Automation XW5TP25221BLConn Feed-Through Terminal Block 4 POS Screw DIN Rail 24A |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
XW5TP25221BL |
|
Buy Now | ||||||||
OMRON Industrial Automation XW5TP25221Conn Feed-Through Terminal Block F 4 POS Screw DIN Rail 24A |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
XW5TP25221 |
|
Buy Now | ||||||||
Microchip Technology Inc TP2522N8-GTrans MOSFET P-CH Si 220V 0.26A 4-Pin(3+Tab) SOT-89 T/R |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
TP2522N8-G |
|
Buy Now | ||||||||
|
TP2522N8-G | Tape & Reel | 4 Weeks | 2,000 |
|
Buy Now | |||||
|
TP2522N8-G | Tape & Reel | 2,000 |
|
Buy Now | ||||||
|
TP2522N8-G | Bulk | 42 Weeks | 2,000 |
|
Get Quote | |||||
|
TP2522N8-G | Tape & Reel | 14,000 | 8 Weeks |
|
Buy Now | |||||
|
TP2522N8-G | 5 Weeks | 2,000 |
|
Get Quote | ||||||
Cooper Crouse-Hinds TP2523 1/2 Deep Cond Sw Box Ears 1/2 Ko; |Crouse-Hinds TP252 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
TP252 | Bulk | 1 |
|
Buy Now | ||||||
|
TP252 |
|
Buy Now | ||||||||
TP252 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: ^ TP2516 TP2520 S j I I r . zj r r jij 'f 1 r I r*, •mimimu . .immilli _ Low T h rash o M P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) |
OCR Scan |
tp2516tp2520o-243aatp2520n8+5 | |
TP2522Contextual Info: TP2522 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2522 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si |
Original |
tp2522a020309 | |
|
Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
tp2522125pfdsfp-tp2522b091408 | |
|
Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
tp2522125pf200pfo-243aa+4 | |
TA 7139
Abstract: TA 7139 P
|
Original |
tp2520tp2522-200v-220v+8 | |
TP2522ND
Abstract: TP2522 TP2522N8-G
|
Original |
tp2522125pfdsfp-tp2522b022309+2 | |
|
Contextual Info: Supertex inc. TP2522 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown |
Original |
tp2522125pfdsfp-tp2522c081413 | |
TP2520Contextual Info: TP2520 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2520 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si |
Original |
tp2520a020309 | |
TP2520Contextual Info: Supertex inc. TP2520 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2520 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description |
Original |
tp2520a031610 | |
A10150
Abstract: TO243AA TP2522 TP2522N8-G TP2522ND A101507
|
Original |
tp2522125pfo-243aaot-89+6 | |
TP2520
Abstract: TP2520N8 TP2522 TP2522N8 TP2522ND voltage drop circuit from 220V to 10V marking TP5C
|
Original |
tp2520tp2522o-243aa-200v+7 | |
|
Contextual Info: 12E •V D I b3b?aS4 G0ÔÛ2M3 I \ s i f* MOTOROLA MOTOROLA SC XSTRS/R T -3 S F ■ SEMICONDUCTOR TECHNICAL DATA Advance Information TP2520 The RF Line U H F P o w e r T ra n sisto r 20 W — 470 M H z U H F PO W ER T R A N S IS T O R The TP2520 is designed for 12.5 V common-emitter amplifier applications in mobile |
OCR Scan |
tp2520 | |
TP2520N8-GContextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
tp2520125pf200pfo-243aa+4 | |
|
Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
Original |
tp2522125pfdsfp-tp2522b022309 | |
|
|
|||
marking TP5C
Abstract: TP5C TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND
|
Original |
tp2520tp2522o-243aa-200v+7 | |
|
Contextual Info: Supertex inc. TP2520 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown |
Original |
tp2520125pfc081413 | |
TA 7139 PContextual Info: TP2520 TP2522 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BVdgs Order Number / Package f*DS ON ^G S (th ) ' d (ON) (max) (max) (min) TO-243AA* Die+ -200V 12Q -2.4V -0.75A TP2520N8 TP2520ND -220V 12Q |
OCR Scan |
tp2520tp2522-200v-220v+7 | |
TO-243AA
Abstract: TN2520N8-G TP2520 tp5cw jedec package TO-243AA
|
Original |
tp2520125pfo-243aaot-89+6 | |
|
Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
Original |
tp2520125pfb022309 | |
|
Contextual Info: ^ TP o TP2516 Supertex inc. 252 Low Thresh old P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ^ G S th b v dqs (max) (max) (min) TO-243AA* DICE+ -160V 12£2 -2.4V -0.75A — TP2516ND -200V 12Î2 -2.4V -0.75A TP2520N8 TP2520ND z ^D S (O N ) |
OCR Scan |
tp2516o-243aatp2520n8tp2516nd+5 | |
TP2522Contextual Info: Supertex inc. TP2522 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2522 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description |
Original |
tp2522a031610 | |
|
Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
tp2520125pf200pfo-243aa+3 | |
TP2520
Abstract: tp5cw TP5C
|
Original |
tp2520125pfb022309tp5cw+1 | |
b0914Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
tp2520125pfb091408b0914 | |