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    TP252 Search Results

    TP252 Datasheets (18)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TP252
    Unknown Cross Reference Datasheet Scan PDF 31.9KB 1
    TP252
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 34.6KB 1
    TP252
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 75.54KB 1
    TP2520
    Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF 28.81KB 4
    TP2520
    Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF 463.52KB 4
    TP2520N8
    Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF 463.53KB 4
    TP2520N8-G
    Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 200V 0.26A SOT89-3 Original PDF 603.6KB
    TP2522
    Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF 28.67KB 4
    TP2522
    Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF 463.52KB 4
    TP2522N8
    Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF 463.53KB 4
    TP2522N8-G
    Supertex P-Channel Enhancement Mode Vertical DMOS FETs Original PDF 581.62KB 5
    TP2522ND
    Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF 463.53KB 4
    TP252A
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 52.53KB 1
    TP252A
    Sprague Semiconductor Data Book 1977 Scan PDF 85.56KB 1
    TP252B
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 52.53KB 1
    TP252B
    Sprague Semiconductor Data Book 1977 Scan PDF 85.56KB 1
    TP252CA
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 52.53KB 1
    TP252CA
    Sprague Semiconductor Data Book 1977 Scan PDF 85.56KB 1
    SF Impression Pixel

    TP252 Price and Stock

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    Microchip Technology Inc TP2520N8-G

    MOSFET (Metal Oxide) Transistor - P-Channel - 200V Vdss - 260mA (Tj) Id - 1.6W (Ta) - TO-243AA (SOT-89) Package - Surface Mount.
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    Master Electronics TP2520N8-G 3,897
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    Verical () TP2520N8-G 3,750 250
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    TP2520N8-G 2,000 2,000
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    Avnet Americas TP2520N8-G Tape & Reel 4 Weeks 2,000
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    Arrow Electronics TP2520N8-G 2,000 4 Weeks 2,000
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    RS TP2520N8-G Bulk 12 Weeks 2,000
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    Microchip Technology Inc TP2520N8-G Tape & Reel 6,000 8 Weeks
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    Bristol Electronics TP2520N8-G 4,057
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    Ameya Holding Limited TP2520N8-G 278
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    OMRON Industrial Automation XW5TP25221BL

    Conn Feed-Through Terminal Block 4 POS Screw DIN Rail 24A
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    Master Electronics XW5TP25221BL
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    OMRON Industrial Automation XW5TP25221

    Conn Feed-Through Terminal Block F 4 POS Screw DIN Rail 24A
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    Master Electronics XW5TP25221
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    Microchip Technology Inc TP2522N8-G

    Trans MOSFET P-CH Si 220V 0.26A 4-Pin(3+Tab) SOT-89 T/R
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    Master Electronics TP2522N8-G
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    Avnet Americas TP2522N8-G Tape & Reel 4 Weeks 2,000
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    RS TP2522N8-G Bulk 42 Weeks 2,000
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    Microchip Technology Inc TP2522N8-G Tape & Reel 14,000 8 Weeks
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    EBV Elektronik TP2522N8-G 5 Weeks 2,000
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    Cooper Crouse-Hinds TP252

    3 1/2 Deep Cond Sw Box Ears 1/2 Ko; |Crouse-Hinds TP252
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    Newark TP252 Bulk 1
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    Onlinecomponents.com TP252
    • 1 $38.76
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    TP252 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: ^ TP2516 TP2520 S j I I r . zj r r jij 'f 1 r I r*, •mimimu . .immilli _ Low T h rash o M P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min)


    OCR Scan
    tp2516tp2520o-243aatp2520n8+5tp2516ndtp2520nd-160v-200vtp2516/tp2520 PDF

    TP2522

    Contextual Info: TP2522 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2522 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    tp2522a020309 PDF

    Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    tp2522125pfdsfp-tp2522b091408 PDF

    Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    tp2522125pf200pfo-243aa+4ot-89o-243dsfp-tp2522b122707 PDF

    TA 7139

    Abstract: TA 7139 P
    Contextual Info: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8 — -220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND * Same as SOT-89. †


    Original
    tp2520tp2522-200v-220v+8ot-89o-243aatp2520n8tp2522n8tp2522nd200pfta 7139ta 7139 p PDF

    TP2522ND

    Abstract: TP2522 TP2522N8-G
    Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    tp2522125pfdsfp-tp2522b022309+2tp2522ndtp2522n8-g PDF

    Contextual Info: Supertex inc. TP2522 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown


    Original
    tp2522125pfdsfp-tp2522c081413 PDF

    TP2520

    Contextual Info: TP2520 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2520 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    tp2520a020309 PDF

    TP2520

    Contextual Info: Supertex inc. TP2520 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2520 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original
    tp2520a031610 PDF

    A10150

    Abstract: TO243AA TP2522 TP2522N8-G TP2522ND A101507
    Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    tp2522125pfo-243aaot-89+6o-243a101507a10150to243aatp2522n8-gtp2522nd PDF

    TP2520

    Abstract: TP2520N8 TP2522 TP2522N8 TP2522ND voltage drop circuit from 220V to 10V marking TP5C
    Contextual Info: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8 — -220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND * Same as SOT-89. †


    Original
    tp2520tp2522o-243aa-200v+7tp2520n8-220vtp2522n8tp2522ndot-89voltage drop circuit from 220v to 10vmarking tp5c PDF

    Contextual Info: 12E •V D I b3b?aS4 G0ÔÛ2M3 I \ s i f* MOTOROLA MOTOROLA SC XSTRS/R T -3 S F ■ SEMICONDUCTOR TECHNICAL DATA Advance Information TP2520 The RF Line U H F P o w e r T ra n sisto r 20 W — 470 M H z U H F PO W ER T R A N S IS T O R The TP2520 is designed for 12.5 V common-emitter amplifier applications in mobile


    OCR Scan
    tp2520 PDF

    TP2520N8-G

    Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    tp2520125pf200pfo-243aa+4ot-89o-243b122707tp2520n8-g PDF

    Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


    Original
    tp2522125pfdsfp-tp2522b022309 PDF

    marking TP5C

    Abstract: TP5C TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND
    Contextual Info: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8 — -220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND * Same as SOT-89. †


    Original
    tp2520tp2522o-243aa-200v+7tp2520n8-220vtp2522n8tp2522ndot-89marking tp5ctp5c PDF

    Contextual Info: Supertex inc. TP2520 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown


    Original
    tp2520125pfc081413 PDF

    TA 7139 P

    Contextual Info: TP2520 TP2522 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BVdgs Order Number / Package f*DS ON ^G S (th ) ' d (ON) (max) (max) (min) TO-243AA* Die+ -200V 12Q -2.4V -0.75A TP2520N8 TP2520ND -220V 12Q


    OCR Scan
    tp2520tp2522-200v-220v+7o-243aatp2520n8tp2522n8tp2520nd125pftp2520/tp2522ta 7139 p PDF

    TO-243AA

    Abstract: TN2520N8-G TP2520 tp5cw jedec package TO-243AA
    Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    tp2520125pfo-243aaot-89+6o-243a101507to-243aatn2520n8-gtp5cwjedec package to-243aa PDF

    Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


    Original
    tp2520125pfb022309 PDF

    Contextual Info: ^ TP o TP2516 Supertex inc. 252 Low Thresh old P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ^ G S th b v dqs (max) (max) (min) TO-243AA* DICE+ -160V 12£2 -2.4V -0.75A — TP2516ND -200V 12Î2 -2.4V -0.75A TP2520N8 TP2520ND z ^D S (O N )


    OCR Scan
    tp2516o-243aatp2520n8tp2516nd+5tp2520nd-160v-200vot-89tp2516/tp2520 PDF

    TP2522

    Contextual Info: Supertex inc. TP2522 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2522 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original
    tp2522a031610 PDF

    Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    tp2520125pf200pfo-243aa+3ot-89o-243b122707 PDF

    TP2520

    Abstract: tp5cw TP5C
    Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    tp2520125pfb022309tp5cw+1tp5c PDF

    b0914

    Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    tp2520125pfb091408b0914 PDF