TP25 Search Results

Contextual Info: TP2510 Superte x inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON VQS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet -100V 3.5£2 -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

Contextual Info: TP2535 TP2540 £jUlt — P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information bv dss/ Order Number / Package ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) TO-92 TO-243AA* DICE+ -350V 25Q -2.4V -0.4A TP2535N3 — TP2535ND -400V 25Q -2.4V -0.4A

Contextual Info: TP2506 Supertex inc. t p 2si o Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^D S O N b v dos -60V -100 V Order Number / Package (max) Vos<th) (max) (min) TO-243AA* Dice* 3.5£2 -2.4V -1.5A — TP2506ND 3.512

Contextual Info: ^ Supertex inc. TP2502 TP2504 Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss / ^D S O N ^G S(th) *D(ON) BV jjgs (max) (max) (min) -20V 2.0C1 -2.4V -40V 2.0£2 -2.4V Order Number / Package TO-243AA* DICE*

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Contextual Info: 0 Supertex inc. TP25D Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information * t Order Number / Package b v dss / ^D S ON ^G S(th) I d (ON) BV dgs (max) (max) (min) TO-92 TO-243AA* DICEt -350V 25Q -2.4V -0.4A TP2535N3

Contextual Info: . Ljà Supertex inc Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package BV dgs ^DSfON max) ^GSflh) (max) ' d(ON) (min) TO-243AA* DICE* -60V 3.5£i -2.4V -1.5A — TP2506ND -100V 3.5Q -2.4V -1.5A

Contextual Info: ^ TP2516 TP2520 S j I I r . zj r r jij 'f 1 r I r*, •mimimu . .immilli _ Low T h rash o M P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min)

TP2535

Contextual Info: TP2535 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2535 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

TP2522

Contextual Info: TP2522 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2522 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

b0914

Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

TP25

Abstract: Tactile Switches TP25
Contextual Info: Tactile Switches TP25 Series 3.8x6 mm SMT Tactile Switch P.C.B. LAYOUT TP25. Flat Terminals P.C.B. LAYOUT TP25L. Bending Terminals SPECIFICATIONS: MATERIALS: > Rating: > Contact Resistance: > Insulation Resistance: > Dielectric Strength: > Electrical Life:

Contextual Info: TP2502 LowThreshold Supertex inc. Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package ^GS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet -20V 2.0Q. -2.4V -2.0 A TP2502N8 TP2502ND * Sam e as SO T-89. P roduct supplied on 2000 piece ca rrie r tape reels.

Contextual Info: TP251 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)2.9 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: TP2502N8 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)370m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)550m Minimum Operating Temp (øC)-55

Contextual Info: Supertex inc. TP2535 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

TP2522ND

Abstract: TP2522 TP2522N8-G
Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

TP2511

Contextual Info: 12E D I b B t i ? 25 M MOTOROLA MOTOROLA SC QGÔÔ24E XSTRS/R *ì | F 1-33-H SEMICONDUCTOR TECHNICAL DATA TP2511 Advance Inform ation The RF Line UHF P o w e r T ran sisto r l o w — 470 M H z UHF POWER TRANSISTOR The TP2511 is designed for 12.5 V UHF amplifiers. Its construction which incorporates

br A 708

Contextual Info: I 1EE D MOTOROLA b3b?2S4 0000240 MO T O R C L A SC S E M IC O N D U C T O R I S r-33-£>7 XSTRS/R F TECHNICAL DATA TP2505 TP2505S A dvance Inform ation The RF Line UHF Power Transistors 5 W — 470 M H z UHF PO W ER T R A N S IS T O R S The TP2505/S are designed for 12.5 V U H F amplifiers. Their construction which incor­

TP5A

Abstract: TP2510 TP2510N8 TP2510ND
Contextual Info: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -100V 3.5Ω -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.