TOSHIBA K13A50D Search Results

TOSHIBA K13A50D Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TB6586BFG		Toshiba Electronic Devices & Storage Corporation	Brushless Motor Driver/3 Phases Controller/Vout(V)=18/Square Wave	Datasheet
TC78B006AFNG		Toshiba Electronic Devices & Storage Corporation	Brushless Motor Driver/1 Phase Pre Driver/Vout(V)=40/Square, Sine Wave	Datasheet
TB62216FTG		Toshiba Electronic Devices & Storage Corporation	Brushed Motor Driver/2ch/Vout(V)=40/Iout(A)=2.5	Datasheet
TB6613FTG		Toshiba Electronic Devices & Storage Corporation	Brushed Motor Driver/8ch/Vout(V)=6/Iout(A)=0.8	Datasheet
TB67H303HG		Toshiba Electronic Devices & Storage Corporation	Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=10	Datasheet

TOSHIBA K13A50D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k13a50da Contextual Info: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK13A50DA k13a50da	PDF
k13a50da Abstract: K13A50D Contextual Info: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK13A50DA k13a50da K13A50D	PDF
Contextual Info: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK13A50DA	PDF
k13a50 Abstract: K13A50DA K13A50D K13A TK13A50DA Contextual Info: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK13A50DA k13a50 K13A50DA K13A50D K13A TK13A50DA	PDF
k13a50da Abstract: k13a50 TK13A50DA K13A50D Contextual Info: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK13A50DA k13a50da k13a50 TK13A50DA K13A50D	PDF
Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK13A50D	PDF
K13A50D 2.0 transistor Abstract: K13A50D transistor K13A50D Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK13A50D K13A50D 2.0 transistor K13A50D transistor K13A50D	PDF
K13A50D transistor Abstract: k13a50 K13A50D TK13A50D K*A50D Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK13A50D K13A50D transistor k13a50 K13A50D TK13A50D K*A50D	PDF
K13A50D transistor Abstract: K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK13A50D K13A50D transistor K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D	PDF