Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TOSHIBA K10A60D Search Results

    TOSHIBA K10A60D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB6586BFG
    Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Controller/Vout(V)=18/Square Wave Datasheet
    TC78B006AFNG
    Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/1 Phase Pre Driver/Vout(V)=40/Square, Sine Wave Datasheet
    TB62216FTG
    Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/2ch/Vout(V)=40/Iout(A)=2.5 Datasheet
    TB6613FTG
    Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/8ch/Vout(V)=6/Iout(A)=0.8 Datasheet
    TB67H303HG
    Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=10 Datasheet

    TOSHIBA K10A60D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k10a60d

    Contextual Info: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original
    TK10A60D k10a60d PDF

    K10A60

    Abstract: k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200
    Contextual Info: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original
    TK10A60D K10A60 k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200 PDF

    k10a60d

    Contextual Info: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original
    TK10A60D k10a60d PDF

    k10a60d

    Abstract: K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D
    Contextual Info: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original
    TK10A60D k10a60d K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D PDF

    k10a60d

    Abstract: toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d
    Contextual Info: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) High forward transfer admittance: |Yfs| = 6.0S (typ.)


    Original
    TK10A60D k10a60d toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d PDF