TOFP Search Results

Plastic 32-pin 300 mil SOIC

Abstract: TAG C1 425 400 DA15F BSC 0925 20-PIN 30-PIN 32-PIN DS1260 DS9003 DS9005
Contextual Info: MECHANICAL DRAWINGS 64 TOFP 081197 37/37 MECHANICAL DRAWINGS SOT 23 081197 36/37 MECHANICAL DRAWINGS DS9006 SIP STIKTM MOTHERBOARD ALL DIMENSIONS IN INCHES TYPICAL LAYOUT FOR DS9005 ENCLOSURE 081197 35/37 MECHANICAL DRAWINGS DS9005 EUROCARD ENCLOSURE 081197 34/37

JEDEC TRAY DIMENSIONS

Abstract: JEDEC tray standard TQFP JEDEC tray JEDEC tray standard TQFP TRAY DIMENSIONS TRAY CONTAINER tray container dimensions TQFP 100 PACKAGE TQFP 80 PACKAGE TRAY DIMENSIONS TQFP 64
Contextual Info: TRAY CONTAINER 7 A' 14.7 17.90 14.30 14.7 135 °C MAX. 18.00 13.95 TOFP12x12×1.0 A NEC 108.0 135.9 PPE 7×17=119 UNIT : mm 286.4 315.0 322.6 SECTION A – A' 14.70 Applied Package 6.22 (6.35) 7.62 12.00 Quantity (pcs) 64-pin Plastic TQFP(1.0mm thick) 80-pin Plastic TQFP(1.0mm thick)

raps

Abstract: PM5343 PM5344
Contextual Info: PM5343 STXC SONET/SDH 155 Mbit/s Transport O/H Terminating Transceiver Transmit Ring Control Port TOFP TOUT[7:0] Transmit Section Trace Buffer Parallel to Serial RICLK RIFP RIN[7:0] Receive Section Trace Buffer Receive Section O/H Processor GRICLK RSIN RSICLK

Contextual Info: TIBPAL22V10-20M HIGH-PERFORMANCE IMPACT-X PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPSQ12A - D3523, JUNE 1 9 9 0 -R E V IS E D MARCH 1992 JT P A C K A G E Second-Generation PLD Architecture TO P V IE W High-Performance Operation: fmax (External Feedback). . . 33.3 MHz

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM 81002S/L-85, 10 , 12 description! The T K M 8 1 0 0 2 S / L is a 1,048,576 w o r d s b y 8 b i t s pcs of TC511 0 0 2 J on the p r i nted c i rcuit board. The T H M 8 1 0 0 2 S / L is o p t i m i z e d for a p p l i c a t i o n to

4N500

Abstract: IC 741 cn
Contextual Info: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N

Ba 33 bco

Contextual Info: Direct RDRAM RAMBUS TM 32/36-M bit 256K x16/18x8d ADVANCE INFORMATION O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application

NZ70

Abstract: TC511001 TC511001AZ adata a55 diagram 4ao5
Contextual Info: TOSHIBA -CLOGIC/MEMORY} 14E D • i-DTVEMß DOlfiTOS S ■ T -46-23-15 TOSHIBA MOS MEMORY PRODUCTS TC511001AP/AJ/AZ-70, TG511001 AP/AJ/flZ-80 TC511001AP/AJ/AZ-10 DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by

SHF750

Abstract: SFH450 siemens siemens SFH nm
Contextual Info: SIEMENS C M P N T S t OPTO 44E D • AS3b32b 00DSCH4 T M S I E X SFH450/750/751 SIEMENS PLASTIC FIBER OPTIC TRANSMITTER DIODE T -m -23 Preliminary Data Sheet • No Fiber Stripping Required • SFH450 - Infrared, Light Grey Plastic Package • SFH750 - Visible Red, Red Plastic

7131S

Abstract: ph 1n4148 7131-S TC7131
Contextual Info: Semiconductor, Inc. TC7131 LOW POWER, HIGH CMRR, 3-1/2 DIGIT ANALOG-TO-DIGITAL CONVERTER FEATURES GENERAL DESCRIPTION • ■ T he TC7131 is a low-pow er, 3-1/2 digit, LC D -drive anaiog-to-digital co n ve rte r ADC . It has superior DC Com m on-M ode R ejection (CM R) w hen used with e ith e r a single

Signetics 27c64

Abstract: 27C64A 27C64A-12 27C64A-15 27C64A-20 27C64AI15 27C64AI20
Contextual Info: Philips Components-Signetics Document No. 853-0081 2 7 C 6 4 A ECN No. 01039 Date of Issue November 12, 1990 64K-bit CMOS EPROM 8K x 8 Status Product Specification Memory Products D ESC R IPT IO N FEA TU RES Philips Components-Signetics 27C64A C M O S E P R O M is a 65,536-bit 5V read

16F5

Abstract: 4c1m16
Contextual Info: Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words x 16 bits • High speed - 50/60 ns RAS access time - 20/25 ns fast page cycle time - 13/17 ns CAS access time • Low power consumption - RAS-only o r ¿AS-before-ftAS refresh

Contextual Info: p w io M M o n r in t e r M27C512 512K 64K x 8 UV ERASABLE PROM Military • Fast Access Time — M27C512-15 150 ns — M27C512-20 200 ns — M27C512-25 250 ns ■ Two-Line Control ■ CMOS and TTL Compatible ■ Low Power — 30 mA max. Active — 1.0 mA max. Standby

Dense-Pac Microsystems

Contextual Info: COPIA D P Z 128W 16A 3 Dense-Pac Microsystems. Inc. q 128K X 16 FLASH EEPROM DENSE-STACK M ODULE PRELIM IN ARY DESCRIPTION: The D PZ128W 16A3 "DEN SE-STACK" module is a revolutionary new memory subsystem using DensePac Microsystems' ceramic Stackable Leadless Chip

lcsb

Abstract: PM5312 PM5344 PM5345
Contextual Info: PM5312 STTX Summary Information SONET/SDH TRANSPORT OVERHEAD TERMINATING TRANSCEIVER FEATURES • Monolithic SONET/SDH Transport Overhead Terminating Transceiver for use in STS-1, STS-3 STM-1 or STS12 (STM-4) applications. • Operates in STS-1 bit serial mode,

transistor bl p89

Abstract: bl p74 transistor J955 XC4000 XC4000A XC4000D XC4000E XC4000EX XC4000H p180 g8
Contextual Info: book XC4000E and XC4000X Series Field Programmable Gate Arrays R January 29, 1999 Version 1.5 6* XC4000E and XC4000X Series Features Note: XC4000 Series devices described in this data sheet include the XC4000E family and XC4000X Series. XC4000X Series devices described in this data sheet

Am27C512s

Abstract: AM27C512-155
Contextual Info: ; ADV MICRO MEMORY 33E Q25752Ô DG2 Öö i a D T IAM3>4 - T - H b - 1 3 -2 9 Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • • • Fast access time — 70 ns Low power consumption: - 100 /¿A maximum standby current

Contextual Info: intel* M2716/M2716M 16K 2K x 8 UV ERASABLE PROM M ilitary m Military Temperature Range • Static Standby Mode M2716M: -55°C to + 125°C (Tc) M2716: —55°C to + 100°C (Tc) ■ Low Power Dissipation of 165 mW Maximum Standby Power ■ 5V ± 10% Vcc ■ Inputs and Outputs TTL Compatible

Contextual Info: — OBSOLETE — OBSOLETE — OBSOLETE — OBSOLETE — OBSOLETE — QPRO XQ4000XL Series QML High-Reliability FPGAs R DS029 v2.0 March 7, 2014 2 XQ4000X Series Features • • • • • • • Certified to MIL-PRF-38535 Appendix A QML (Qualified Manufacturer Listing)

Contextual Info: TENTATIVE DATA 262,144 W O R D x 4 BIT D YN AM IC RAM DESCRIPTION The TC514266AP/AJ/AZ is the new generation dynam ic R A M organized 262,144 words b y 4 bits. The TC514266AP/AJ/AZ utilizes T O S H IB A ’S C M O S Silicon gate process technology as w e ll as advanced

SR52 W 18

Abstract: GR-253-CORE GR-499-CORE PR11 T7690 T7698 uig823
Contextual Info: a e re 8 AdLib OCR Evaluation systems Data Sheet September 2002 T7698 Quad T1/E1 Line Interface and Octal T1/E1 Monitor Features . Integrated quad T1/E1 line interface and octal T1/ El receive frame monitor with HDLC processor provides system QoS capabilities .

at27hc642

Contextual Info: Ä* tO 1992 Features • Bipolar Speed Read Access Time - 35ns • Low Power CMOS Operation 25 mA max. Standby 45 mA max. Active at 10 MHz • Direct Bipolar PROM Replacement • High Output Drtve Capability • Reprogrammable •10Ovis/byte typical Tested 100%for Programmability

Contextual Info: VAN T I S BE Y O N D PERFORMANCI-, Product Menu An AMD .om pan \ HIGHLIGHTS MACH 1 -5 CPLD Families Fastest speeds; Easiest-to-Use SpeedLocking (Fixed, Guaranteed Timing 3 2-51 2 Macrocells; 32-256 l/Os JTAG-ISP; 3 .3 -V or 5 -V Solutions PCI-Compliance at 5, 7, 10 and 12ns

PAL20L8BCN

Abstract: PAL20L8 programming specifications pal20l8b
Contextual Info: TIBPAL20L8-15CNL, TIBPAL20R4-15CNL, TIBPAL20R6-15CNL, TIBPAL20R8-15CNL TIBPAL20L8-25CNL, TIBPAL20R4-25CNL, TIBPAL20R6-25CNL, TIBPAL20R8-25CNL HIGH-PERFORMANCE IMPACT PAL CIRCUITS SRPS023 - D3095 JANUARY 1 9 8 0 -R E V IS E D AUG UST 1989 • • • •