TO99 MOSFET Search Results

2N3609

Abstract: 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (S) Max (V) elN Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style P-Chann I Enhanc ment-Typ , (Cont'd) 5 10 15 20 25 30 TP0102N3 TPOS02N3

2N4044

Abstract: 2N4045 2N4100 2N4878 3N165 3N166 3N188 3N189 3N190 3N191
Contextual Info: 1. DISCRETES Differential Amplifiers — Dual Monolithic P-Channel MOSFETS Enhancement Ordering Information Preferred P irt Number V osi th) min/max V Package BVd s s min/max ta s s max •g s s max V PA PA Vg S 1-2 max r C)S(on) max !) talon) min/max mA

3N188

Abstract: X3N189 3N189 3N190 3N191 X3N188 X3N190 X3N191
Contextual Info: CA LO GI C CORP 4ÖE ]> lflMM3E2 0 0 G 0 3 S M 3 • C G C h 3N188-3N191 Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N188-3N191 'T Z 't- 'Z n FEATURES • • • • A B S O L U T E MAXIMUM RATING S T a - 25°C unless otherwise specified

TO99 package

Abstract: ICL7667MJA/883B macy1-x8 ICL7667 CDIP2-T8 ICL7667MJA
Contextual Info: SCOPE: DUAL-POWER MOSFET DRIVER Device Type 01 Generic Number ICL7667M x /883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter TV JA Mil-Std-1835 MACY1-X8 GDIP1-T8 or CDIP2-T8 Case Outline Package Code

5962-8766001PA

Contextual Info: SCOPE: DUAL-POWER MOSFET DRIVER Device Type 01 Generic Number ICL7667M x /883B SMD Number 5962-87660 Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter SMD MAXIM G TV P JA Mil-Std-1835 MACY1-X8 GDIP1-T8 or CDIP2-T8

5962-8766001GC

Contextual Info: SCOPE: DUAL-POWER MOSFET DRIVER Device Type 01 Generic Number ICL7667M x /883B SMD Number 5962-87660 Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter SMD MAXIM G TV P JA Mil-Std-1835 MACY1-X8 GDIP1-T8 or CDIP2-T8

3N165

Abstract: 3N166 3N170 X3N165-66
Contextual Info: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC 3N165 / 3N166 FEATURES ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) • Very High Impedance • High Gate Breakdown • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 2)

3N166

Abstract: 3N165 3N170 73Package
Contextual Info: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N165 / 3N166 FEATURES ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) • Very High Impedance • High Gate Breakdown • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 2)

3N190

Abstract: TO-99 3N165 3N166 3N191 ITC5911 ITC5912
Contextual Info: HARRIS SEMICOND SECTOR 4 3 0 2 2 7 1 0 0 1 5 7 G 3 .4 27 E D IHAS -3/-Z Differential Amplifiers Continued 5 V'T-Z7-Z£ Junction FETs — N-Channel (Continued) PART NUMBER ITC5911 ITC5912 Vqs1-2 aVGS mV MV/°C PACKAGE Max Max TO-99 TO-99 10 15 20 40 •g

3N190

Abstract: 3N190-91 3N191 X3N190-91
Contextual Info: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC 3N190 / 3N191 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)

3N190

Abstract: 3N188 3N190-91 3N191 X3N190-91 C2506
Contextual Info: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N190 / 3N191 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)

Contextual Info: Œ\ ICL7667 HARRIS S E M I C O N D U C T O R Dual Power MOSFET Driver May 1992 Features Description • Fast Rise and Fall Times - 30ns with 1000pF Load The ICL7667 is a dual monolithic high-speed driver designed to convert TTL level signals into high current

MAX8211

Abstract: MAX8212 Programmable Voltage MAX8211CPA MAX8211CSA MAX8211CTY MAX8211CUA MAX8211EPA MAX8211ESA ICL8212s
Contextual Info: 19-0539; Rev 4; 9/02 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features ♦ µP Power-Fail Warning ♦ Improved 2nd Source for ICL8211/ICL8212 ♦ Low-Power CMOS Design _Applications

MAX8211

Abstract: MAX8212 MAX8211MSA max8212cpa MAX8211CPA MAX8211CSA MAX8211CTY MAX8211CUA MAX8211EPA MAX8211ESA
Contextual Info: 19-0539; Rev 5; 9/08 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features Maxim’s MAX8211 and MAX8212 are CMOS micropower voltage detectors that warn microprocessors µPs of power failures. Each contains a comparator, a 1.5V

MAX722

Abstract: MAX717 MAX753 MAX714
Contextual Info: POWER MANAGEMENT I BATTERY CHARGERS MULTI-FUNCTION SUPPLIES * MAX712 NiCd/NiMH, zero voltage-slope detection f t MAX713 (NiCd/NiMH, negative voltage-slope detection) LOW-SIDE MOSFET DRIVERS M AX626 (2A, 4Q, dual inverting) MAX613 MAX627 (2A, 4 ft, dual noninverting)

Contextual Info: CALOGIC CORP MAE J> 1Ö4M322 00003SM 3 • C G C vJ 3N188-3N181 'T Z FEATURES • • • • l- 'Z I ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise specified Very High Input Impedance High Gate Breakdown 3N190-3N191 Zener Protected Gate 3N188-3N189

MAX8212

Abstract: MAX8211 MAX8211CUA MAX8211EPA MAX8211ESA MAX8211CPA MAX8211CSA MAX8211CTY
Contextual Info: 19-0539; Rev 3; 1/95 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ _Applications µP Voltage Monitoring Undervoltage Detection Overvoltage Detection

L7667

Abstract: CL7667 ICL7667
Contextual Info: E G E SOLID STATE Gl 38 750 8 1 G E S O L ID DE'| 3075001 DDlOSba 0 STATE 01E 10562 D T - S l - i Z - W ñ ICL7667 «I Dual Power MOSFET Driver Cl 01 »1 GENERAL DESCRIPTION FEATURES The ICL7667 is a dual monolithic high-speed driver de­ signed to convert T T L level signals into high current outputs

MAX8212

Abstract: MAX8211
Contextual Info: 19-0539; Rev 4; 9/02 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features ♦ µP Power-Fail Warning ♦ Improved 2nd Source for ICL8211/ICL8212 ♦ Low-Power CMOS Design _Applications

IC 8212 internal block diagram

Abstract: L8211 AX8212 MAX8212 MAX8211 8212 functional block diagram
Contextual Info: JVKÆXAJVK 79 0539; Rev 3; 1/95 M icroprocessor Voltage M onitors w ith Program m able Voltage D etectio n The MAX8211 provides a 7mA current-limited output sink whenever the voltage applied to the threshold pin is less than the 1.5V internal reference. In the MAX8212, a voltage

MAX8212

Abstract: MAX8211 Programmable Voltage microprocessor 8212 block diagram ICL8211
Contextual Info: 19-0539; Rev 4; 9/02 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features ♦ µP Power-Fail Warning ♦ Improved 2nd Source for ICL8211/ICL8212 ♦ Low-Power CMOS Design _Applications

ICL7667

Contextual Info: ICL7667 fil HARRIS S E M I C O N D U C T O R Dual Power MOSFET Driver May 1992 Description Features • Fast Rise and Fall Times - 30ns with lOOOpF Load The ICL7667 is a dual monolithic high-speed driver designed to convert TTL level signals into high current

AX8211

Abstract: l8211 f 8212
Contextual Info: 19-0539; Rev 3; 1/95 y k i> J X i> M M icroprocessor Voltage M onitors w ith Program m able Voltage D etectio n D e s c rip tio n The MAX8211 provides a 7mA current-limited output sink whenever the voltage applied to the threshold pin is less than the 1.5V internal reference. In the MAX8212, a voltage

MAX8212

Abstract: MAX8211
Contextual Info: 19-0539; Rev 4; 9/02 Microprocessor Voltage Monitors with Programmable Voltage Detection _Features ♦ µP Power-Fail Warning ♦ Improved 2nd Source for ICL8211/ICL8212 ♦ Low-Power CMOS Design _Applications