TO72 PACKAGE Search Results

CNY18V

Abstract: CNY18IV CNY18 CNY18III
Contextual Info: CNY18 Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for high reliability requirements. 96 12257

K120P

Contextual Info: K120P TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The K120P consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically sealed 4 lead TO72 metal can package for high reliability requirements.

TO72 package n-channel jfet

Abstract: TRANISTOR JFET TO72 package NTE452
Contextual Info: NTE452 Silicon N–Channel JFET Transistor VHF Amplifier, Mixer Description: The NTE452 is a silicon, N–channel junction field effect tranistor JFET in a TO72 type package designed to be used in the depletion mode in VHF/UHF amplifiers. Absolute Maximum Ratings:

NTE456

Abstract: TO72 package
Contextual Info: NTE456 N–Channel Silicon JFET General Purpose Amp, Switch Description: The NTE456 is an N–Channel junction silicon field–effect transistor in a TO72 type package designed for general purpose amplifier and switching applications. Absolute Maximum Ratings:

K120P

Abstract: b 11061
Contextual Info: K120P Optocoupler with Phototransistor Output Description The K120P consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a hermetically sealed 4-lead TO72 metal can package for high reliability requirements. 96 12257

cny18

Abstract: Telefunken Phototransistor
Contextual Info: CNY18 TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically sealed 4 lead TO72 metal can package for high reliability requirements.

scs thyristor

Abstract: TO72 package
Contextual Info: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage

scs thyristor

Abstract: icer capacitor NTE239
Contextual Info: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage

To-206AF

Abstract: TO72 package To206AF 206af TO72 1455
Contextual Info: Semelab Aerospace Package Dimensions 5.31 0.210 5.84 (0.230) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 2.54 (0.100) Nom. 4 12.7 (0.500) min. 3 0.48 (0.019) 0.41 (0.016) dia. 1 2 Dimensions in mm (inches) TO72 Semelab Plc Tel +44 (0) 1455 556565

2N3824

Abstract: 2N6660Q 2N6660CSM4-JQR-B TO276AB 2N4393CSMJ
Contextual Info: Search Results Part number search for devices beginning "2N3824" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N3824 N-Channel TO72 50V - 0.3W -

CNY18

Abstract: CNY18IV CNY18III CNY18V
Contextual Info: Tem ic CNY18 S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for

Contextual Info: Tem ic CNY18 S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for

2N3907

Abstract: 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252
Contextual Info: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C O N V E N T I O N A L PAC K AG E S TO46 TO72 TO71 TO18 TO5 TO39 TRANSISTORS, MOSFETS, DIODES, VOLTAGE REGULATORS TO46 TO18 cont TO39 (cont) TO39 (cont) TO39 (cont) TO77(cont)

BF480

Abstract: R950 Avantek S 2n3570 2SC988
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W V(BR)CBO fosc Max Gp Po N.F. at fTest (V) (Hz) (dB) (W) (dB) (Hz) Ic Max (A) Toper MatI. Max (OC) Package Style UHF/Microwave Transistors, Bipolar NPN (Cont'd) 5 10 15 20 2N6619

IT1701

Abstract: 2N4351 3N172 3N163 3N164 3N170 3N171 IT1750 M116 M117
Contextual Info: I HA R R I S S E M I C O N D S E C T O R 27E D T SeS i; O 4302 27 1 QD157G1 0 BBHAS g • T r'O l" 0 I T -Z -7-Z 5 Switching/Am plifier Transistors M O S F E T s — N -C h a n n e l PART NUMBER PACKAGE VGS TH I V Max Min BVds S V Min •dss pA Max •gss

BF167

Abstract: 2SC2570 2N4259 BF180 2N4134 2N3932 2N3933 2N4135 BF173 BF181
Contextual Info: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN Maximum Ratings Type No. VCB0 VCE0 VEBO (V) (V) (V) Min Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) CDIL 'cBO *r 'c NF O Freq VCB hFE 0 'c * VCE VCE(Sat) & VBE(Sal) ® !C 'ces ® vce Cot

2n3035

Abstract: 2N1994 bls100 2N1169 500HM ST5610 BLS100 siliconix
Contextual Info: ADDITIONAL TRANSISTORS Item Number Part Number Manufacturer PolarIty Mati. Description Package Style Avalanch Transistors CK273 2N3033 2N3034 2N3035 2N5271 ASZ23 5 SemiconTech See Index See Index See Index See Index NthAmerSemi NPN NPN NPN NPN NPN PNP Si Si

SE-5023

Abstract: SE5050 2N918 JAN TO-72 SE5055 2N918 2N3137 2n918jan J 2N918 SE8010
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN RF—IF AMPLIFIER A N D OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY METAL PACKAGE P.G. V CEO h NF Cob PD (OSC. Po) dB @ f dB @ VOLTS MHz pF MIN MIN MAX 9.0 0.5 6.0 @ MAX MHz TYPE MIN SE8010 SE5023 10.8 @ 27 60 22.5 @ 45 20

2N3933

Abstract: BF180 BF181 2sc2570 2N3932 2N4134 2N4135 BF167 BF173 BF182
Contextual Info: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCB0 VCE0 V EB0 (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9

PN4340

Contextual Info: HARRIS SEMICOND SECTOR 27E D Bi M3G2271 OOlSb'n b Hi HAS ^ T' n i-oi-2L7~ U Ö Amplifier Transistors Junction FETs — N-Channel PART NUMBER 9ts /imho PACKAGE* Min •dss mA Min Max Vp V Min Max •gss pA Max BVqss C|ss V pF Min Max Cres pF Max en nV/VHz

BFP91/A

Abstract: bfq 85 BFQ22 2N918 BFP10 BFQ63 BFT50 BFP91A BFP96
Contextual Info: S G . S —THOMSON 7 1 C D | 7 = 1 5 ^ 3 ? GaG4fifc,b 1 1 ;7 -33*^/ THOfyîSOrj S E R f llC O R S D U C T O R S _ 1 . 1000 MHz class A low noise for small signal applications P.ot V BR CEO Types Package fî @ ic Gp @ Iq /

2N4351

Abstract: 3N161 3N163 3N164 3N170 3N171 3N172 3N173 IT1700 IT1750
Contextual Info: 1. D IS C R E T E S Switches and Amplifiers Offering intormatfM Priftrrtd P in Num b« Package — ^G S lh GS(ofl| Min/max V M O SFET Qls BWq s s lo s s max Ig s s max min r DS (on) max talon) min •o (on) min V pA pA pmho u mA mA max P-Chinm l Enhancamtnt: Gen. u se d w here max isolation between signal source and logic drive required: sw. "O n" resistance varies with signal amplitude.

Diode BAx

Abstract: BAX46 TO96 package BAX54 BAX48 72 diode bax49 TO77 BAX53 TO-77
Contextual Info: SPECIAL ASSEMBLIES Silicon diode assemblies 7 cc IT IL PACKAGE 1 1 xo «0 £CN •O ♦•O CONNECTION TYPE Characteristics o f each diode: V F= 1V max @ l F= 100 m A; B V = 60V min; CD= 3 pF max C IR C U IT CO NNECTION C IR C U IT CONNECTION t i I— W—T— w-

n-channel fet to-92

Abstract: 2N4117A fet j310 2N5464 j310 fet 2N5485 FET J202 2N4119 FET 2N5459 2n4117 jan
Contextual Info: 1. DISCRETES Amplifiers— Junction FET Ordering Information Preferred Part Number Bis min Package n mho •g s s Vp m ín/m ax ta s s m in/max mA V max BVq s s min max Crss max n max pA V pF PF n v / s /líz" 4 C |SS N -c h a n n e l: 2N3684 TO-72 2N3685