TO72 PACKAGE Search Results

TO72 PACKAGE Result Highlights (5)

Part	Manufacturer	Description	Download
54ACT825/QKA	Rochester Electronics LLC	54ACT825/QKA - Dual marked (5962-9161101MKA), D-Type Flip-Flop, 5V, 24-CFP	PDF
TPH1R306PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N)	Datasheet
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)	Datasheet
TPH9R00CQ5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N)	Datasheet
TPHR8504PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N)	Datasheet

TO72 PACKAGE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CNY18V Abstract: CNY18IV CNY18 CNY18III Contextual Info: CNY18 Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for high reliability requirements. 96 12257	Original	CNY18 CNY18 CNY18III CNY18IV CNY18V 11-Jun-96 D-74025 CNY18V CNY18IV CNY18III	PDF
scs thyristor Abstract: TO72 package Contextual Info: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage	Original	NTE239 NTE239 scs thyristor TO72 package	PDF
BF167 Abstract: BF200 transistor BF180 transistor 2sc2570 2n3600 2N4135 BFL84 2N3932 2N3933 2N4134 Contextual Info: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCBO VCE0 V EBO (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9	OCR Scan	2N3933 2N4134 2N4135 2N42S9 BF167 2N2857 2N3478 2N3600 2NS180 MRFS01 BF200 transistor BF180 transistor 2sc2570 BFL84 2N3932	PDF
2N3933 Abstract: BF180 BF181 2sc2570 2N3932 2N4134 2N4135 BF167 BF173 BF182 Contextual Info: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCB0 VCE0 V EB0 (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9	OCR Scan	2N3933 2N4134 2N4135 2N42S9 BF167 O-72-1 2N2857 2N3478 2N3600 2NS180 BF180 BF181 2sc2570 2N3932 BF173 BF182	PDF
PN4340 Contextual Info: HARRIS SEMICOND SECTOR 27E D Bi M3G2271 OOlSb'n b Hi HAS ^ T' n i-oi-2L7~ U Ö Amplifier Transistors Junction FETs — N-Channel PART NUMBER 9ts /imho PACKAGE* Min •dss mA Min Max Vp V Min Max •gss pA Max BVqss C\|ss V pF Min Max Cres pF Max en nV/VHz	OCR Scan	M3G2271 2N3684 2N3685 2N3686 2N3687 2N4117 2N4117A 2N4118 2N4118A 2N4119 PN4340	PDF
BFP91/A Abstract: bfq 85 BFQ22 2N918 BFP10 BFQ63 BFT50 BFP91A BFP96 Contextual Info: S G . S —THOMSON 7 1 C D \| 7 = 1 5 ^ 3 ? GaG4fifc,b 1 1 ;7 -33*^/ THOfyîSOrj S E R f llC O R S D U C T O R S _ 1 . 1000 MHz class A low noise for small signal applications P.ot V BR CEO Types Package fî @ ic Gp @ Iq /	OCR Scan	0Q04flt 2N918 BFT50959 BFT50 BFQ63 BFP10 CB-233 BFP91/A bfq 85 BFQ22 BFP91A BFP96	PDF
Diode BAx Abstract: BAX46 TO96 package BAX54 BAX48 72 diode bax49 TO77 BAX53 TO-77 Contextual Info: SPECIAL ASSEMBLIES Silicon diode assemblies 7 cc IT IL PACKAGE 1 1 xo «0 £CN •O ♦•O CONNECTION TYPE Characteristics o f each diode: V F= 1V max @ l F= 100 m A; B V = 60V min; CD= 3 pF max C IR C U IT CO NNECTION C IR C U IT CONNECTION t i I— W—T— w-	OCR Scan	BAX46 Diode BAx TO96 package BAX54 BAX48 72 diode bax49 TO77 BAX53 TO-77	PDF
bfr 91 Abstract: THOMSON-CSF CANAL Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (MHz) le l\IF Cl2e @ C22b* ImA) (pF) (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72 15	OCR Scan		PDF
BFQ58 Abstract: BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450 Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors N=NPN P=PNP BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ57 BFQ58 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73 BFQ73S	OCR Scan	6535b05 00M5Mgfl BF199 O-92d BF599 BF240 BF840 BF241 BFQ58 BFQ57 BFT99 RF Bipolar Transistors BFT97 BFP194 BF840 BFT65 BFR34A BF450	PDF
FPQ3725 Abstract: 2n999 FPQ3724 FPQ-3724 Contextual Info: TRANSISTORS— MULTIPLE TRANSISTORS NPN DARLINGTON AMPLIFIER TRANSISTORS NUMERIC LISTING METAL AND PLASTIC PACKAGE V CEO VOLTS TYPE MHz ^ob pF MIN MAX h FE hFE MIN - MAX MIN @ •c mA PD V 2 5 "c mW Package 310 TO-92 MPSA12 20 20000 @ 10 MPSA13 30 5000 @	OCR Scan	MPSA12 MPSA13 MPSA14 2N997 2N998 2N999 2N2723 2N2724 2N2725 FPQ3724 FPQ3725 FPQ3724 FPQ-3724	PDF
BF272 Abstract: ampli lineaire AMPLI LINEAIRE FM Transistor BFR 96 if amplifier BF167 cb amplifier BF509 L 146 CB BF199 Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72	OCR Scan	BF272 BF1300 CB-146 ampli lineaire AMPLI LINEAIRE FM Transistor BFR 96 if amplifier BF167 cb amplifier BF509 L 146 CB BF199	PDF
MRF553T Abstract: MRF517 Contextual Info: MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB typ @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA • Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz	Original	MRF517 To-39 MRF545 MRF544 MRF553T MRF517	PDF
s-parameter 2N3866A Abstract: mrf571 S-parameter 2N5179 Contextual Info: MRF4427, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available Gain – 20dB typ @ 200MHz	Original	MRF4427, MRF3866 200MHz MRF545 MRF544 s-parameter 2N3866A mrf571 S-parameter 2N5179	PDF
2N3866 Abstract: Transistor 2N3866 RF 2N3866 2n3866a 2N3866 application note 2N3866 equivalent mrf555 BFR91 parameter S data 2n3866 low cost BFR90 transistor Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics	Original	2N3866 2N3866A To-39 28Vdc BFR90 MRF545 MRF544 2N3866/2N3866A Transistor 2N3866 RF 2N3866 2n3866a 2N3866 application note 2N3866 equivalent mrf555 BFR91 parameter S data 2n3866 low cost BFR90 transistor	PDF

2N 2857 Abstract: 2N918 2N3600 RF-IF Contextual Info: JEDEC TRANSISTORS continued c E h *— LiCS. X<a E o n o G "a X co e Uz uo m CM II«j h- @ PACKAGE Nl X 5 f (MHz) a. :> UJ u :> a UJ 1< cc f (MHz) > K cc < —i o PG min (dB) TYPE RF-IF amplifiers/oscillators S _§ Û Q. 2N 707 NPN 25 — 5 6 100 — —	OCR Scan	2N918 2N 2857 2N3600 RF-IF	PDF
s-parameter 2N5109 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF3866, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available	Original	MRF3866, Data00 s-parameter 2N5109	PDF
MRF517 Abstract: VK200 mrf559 mrf559 vk200 nf c4 npn MRF5812 RF Transistor Selection 2N4427 2N5179 2N6255 MRF4427 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product @ 60mA	Original	MRF517 To-39 MRF517 MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 VK200 mrf559 mrf559 vk200 nf c4 npn MRF5812 RF Transistor Selection 2N4427 2N5179 2N6255 MRF4427	PDF
s-parameter 2N4427 Abstract: 2N5179 s-parameter 2N3866A s-parameter 2N3866 2N4427 2N6255 MRF3866 MRF4427 MRF553 MRF559 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF4427, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available	Original	MRF4427, MRF3866 200MHz Collector-B1000 BFR91 BFR90 MRF545 MRF544 MSC1313 MRF555 s-parameter 2N4427 2N5179 s-parameter 2N3866A s-parameter 2N3866 2N4427 2N6255 MRF3866 MRF4427 MRF553 MRF559	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2N5109 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 2n3866 2N3866 application note RF NPN POWER TRANSISTOR 2.5 GHZ S-parameter 2N5179 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •	Original	2N5109 To-39 2N3866A MRF559 MRF904 MRF5943C 2N4427 MRF4427, RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2N5109 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 2n3866 2N3866 application note RF NPN POWER TRANSISTOR 2.5 GHZ S-parameter 2N5179	PDF
2n4427 MOTOROLA Abstract: motorola 2N4427 2n4427 MSC1301 Transistor 2n4427 2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w MRF559 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA	Original	2N4427 To-39 MRF4427, MSC1301 2n4427 MOTOROLA motorola 2N4427 2n4427 Transistor 2n4427 2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w MRF559	PDF
4600 8 pin ic Abstract: MRF607 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF5943 s-parameter 2N2857 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available	Original	MRF5943, 300MHz BFR91 BFR90 MRF545 MRF544 MSC1321 4600 8 pin ic MRF607 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF559 MRF5943 s-parameter 2N2857	PDF
Contextual Info: MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	MRF557 MRF545 MRF544	PDF
S-parameter 2N5179 Abstract: s-parameter 2N3866A s-parameter 2N2857 s-parameter 2N4427 2N5179 2N3866A 2N4427 2N6255 MRF3866 MRF4427 Contextual Info: MRF4427, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available Gain – 20dB typ @ 200MHz	Original	MRF4427, MRF3866 200MHz MRF559 MRF904 MRF4427 S-parameter 2N5179 s-parameter 2N3866A s-parameter 2N2857 s-parameter 2N4427 2N5179 2N3866A 2N4427 2N6255 MRF3866	PDF
transistor bfr96 Abstract: transistor BFR91 msc1302 2n2857 UHF transistor common base amplifier 2N4427 equivalent bfr91 2N5179 low cost BFR90 transistor RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR C 10-12 GHZ npn UHF transistor 2N5179 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA	Original	MRF517 To-39 MRF571 BFR91 BFR90 MRF545 MRF544 MSC1302 transistor bfr96 transistor BFR91 2n2857 UHF transistor common base amplifier 2N4427 equivalent bfr91 2N5179 low cost BFR90 transistor RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR C 10-12 GHZ npn UHF transistor 2N5179	PDF

TO72 PACKAGE Search Results

TO72 PACKAGE Result Highlights (5)

TO72 PACKAGE Datasheets Context Search

CNY18V

scs thyristor

BF167

2N3933

PN4340

BFP91/A

Diode BAx

bfr 91

BFQ58

FPQ3725

BF272

MRF553T

s-parameter 2N3866A

2N3866

2N 2857

s-parameter 2N5109

MRF517

s-parameter 2N4427

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

2n4427 MOTOROLA

4600 8 pin ic

S-parameter 2N5179

transistor bfr96