TO4 TRANSISTOR Search Results

2SC5093

Contextual Info: TO SH IBA 2SC5093 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5093 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Low Noise Figure, High Gain. • N F=1.8dB, |S2lel2= 9.5dB f=2GHz 1.25 ± 0.1 to4 1 MAXIMUM RATINGS (Ta = 25°C)

transistor cross reference chart

Abstract: BFP405F to4 88 TO4 45
Contextual Info: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 4 8 B F P 4 05 F R F T r a n s i s t or a s L o w C o s t , L o w C u r r e n t 2.5 mA 3 to4 GHz UWB Tx Amplifier with 2.2 3.6 V Operation R F & P r o t e c ti o n D e v i c e s

MJ13001

Abstract: MJ-13001
Contextual Info: , LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 DTS401 -DTS403 DTS409-DTS411 DTS413 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS hmr Induttrr TV* <*««) y («SSi VCH> (vat) ICEH

17F-1

Contextual Info: P hilips Sem iconductors Product specification Optocouplers CNY17-1 to 4/CNY17F-1 to 4 APPROVALS FEATURES • Fast switching STANDARD • Low saturation voltage UL note 1 • High maximum output voltage VDE (note 1) approved in accordance with VDE 0883/6.80

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor BUY71 ueaumniuiN • High Switching Speed • Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (M in) I APPLICATIONS

KTB1469

Abstract: KTD2161 YS 150 003 b YS 150 003
Contextual Info: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD2161 EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION DRIVER STAGE APPLICATION COROR TV CLASS B SOUND OUTPUT APPLICATION A R S 1 FEATURES P CSC

V121

Abstract: KTC3197
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3197 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES • High Gain : Gpe=33dB Typ. (f=45MHz). • Good Linearity of h MAXIMUM RATINGS (Ta=25°C)

BUR50

Abstract: Jedec TO-3 metal case
Contextual Info: r z 7 S C S -T H O M S O N ^ 7 # M M S iL I O T O K S BUR50 BU R 5 0 S HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTION The BUR50 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, the BU R50S is the same type in Jedec TO-3 metal case,

GD4007UB

Contextual Info: GOLDSTAR 4028757 TECHNOLOGY GOLDSTAR TECHNOLOGY INCi INC. DM e 04E D I 4Dsa?s? aoniLia a 01619 D T-H3 -Z5 GD4007UB DUAL COMPLEMENTARY PAIR PLUS INVERTER DESCRIPTION - The 4007UB is a Dual Complementary Pair and an Inverter w ith access to each device. It has three n-channel and three p-channel enhancement mode MOS transistors. For proper

2SC2527

Abstract: fujitsu DC-DC a1077 NPN transistor 2527
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. 2SC2527 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2527 is silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor R E T technology. R E T

2SC5324

Contextual Info: TO SH IBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4 dB f = 2 GHz : |S21el2 = 12 dB (f = 2 GHz) 2.1 ± 0.1 1.25 ± 0.1 CHARACTERISTIC

2SC5324

Contextual Info: T O S H IB A 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4 dB f = 2 GHz : |S21el2 = 12 dB (f = 2 GHz) 2.1 ± 0.1 1.25 ± 0.1

TIP34

Abstract: TO3A TIP33 TIP33A TIP33B TIP33C TIP34A TIP34B TIP34C
Contextual Info: PANASONIC INDL/ELEK -CIO t^ a a fls a 1EE D Silicon PNP Power Transistors 0010431 3 -3 3 '2 I t TOP-3 Package Absolute Maximum Ratings Ta=25°C tteni Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current

SOT-90B

Abstract: CNY17-1 17F-2 17-F1 Y17F CNY17 CNY17F CNY17F-1 17F-3 17-F4
Contextual Info: P h ilip s Sem icon du ctor« P rodu ct specification Optocouplers CNY17-1 to 4/CNY17F-1 to 4 APPRO VALS FEATURES • Fast switching S TA N D A R D • Low saturation voltage UL note 1 • High maximum output voltage VDE (note 1) approved in accordance with V D E 0883/6.80

Westinghouse diode

Abstract: Ks324520 WESTINGHOUSE ELECTRIC motor ac KS621K20 Westinghouse module KS324
Contextual Info: 7294621 POWEREX INC T É? DE | 72T4L.21 0DQEHG7 5 | f Q A T-33-35 Single Darlington _ AmDeres TRANSISTOR í c n /i nnn 51i+o M odules Dim A B C D E F G H J K L N P Inches 3.740 Max 3.150 + .010 .90 M 5xM et 2.44 Max .59 .925 1.181 Max .83 .28 .236 .216 Dia 4

GCS9030

Abstract: STD8N10L 066AA 100VDS
Contextual Info: rz Z ^ 7/ S C S -T H O M S O N IKJDra IILIOT©raDSl STD8 N10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss STD8N10L 100 V RDS on < 0.33 Id n % 8A • . . . . . . . TYPICAL R[)S(on) = 0.25 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: E2C0010-27 -Y4 O K I Semiconductor Previous version: Jul. 1996 M SC1163 ~ 40-Bit Anode Driver GENERAL DESCRIPTION The MSC1163 is a monolithic IC using the Bi-CMOS process for hybridizing CMOS and bipolar transistors on the same chip. The logic portion such as the input stage, shift register and latch is

IRFJ230

Abstract: irf 539 IRF 543 MOSFET IRFJ231 IRFJ232 IRFJ233 T-39 T066 g-544 gogts
Contextual Info: H E 0 | 405 5452 IN T E R N A T IO N A L OOGTSba b | Data Sheet No. PD-9.404A R E C T IF IE R INTERNATIONAL RECTIFIER IO R T-39-11 IRFJ230 HEXFET TRANSISTORS IRFJS3Ì N-CHANNEL POWER MDSFETs IRFJ23S IRFJ233 Features: 200 Volt, 0.4 Ohm HEXFET The HEXFET® technology is the key to International

optocoupler a 3131

Abstract: optocoupler 3131 optocoupler LP 250 3131 optocoupler MCT26 314 optocoupler L002 optocoupler 450 rfu20
Contextual Info: J\_ MCT26 T O OPTOCOUPLER Optocoupler in a Dl L plastic envelope. The MCT26 comprises an infrared GaAs diode and a npn silicon phototransistor. UL — Covered under UL component recognition FILE E 90700 VDE — Approved according to VDE 0883/6.80 Reference voltage VDE 0110b Tab 4 : AC 380 V/DC 450 V - isolation group C

Pulse-Width-Modulation Control Circuit

Abstract: MS-026 S-PQFP-G48 TL1464I
Contextual Info: TL1464I QUAD PULSE-WIDTH-MODULATION CONTROL CIRCUIT SLVS266 – FEBRUARY 2000 D D D D D D D High-Speed Drive Controller for PNP Power Transistor Internal-Regulator Provides a Stable 1.5 V Reference Supply Low Start-Up Voltage 3.1 V Internal Short-Circuit Protection

CNY17G-3

Abstract: CNY17G3
Contextual Info: Philips Semiconductors Product specification High-voltage optocouplers CNY17G/CNY17GF QUALITY TECHNOLOGIES CORP TMbböSl OOOMbEE M m S7E D IflTY FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with

CD40158

Contextual Info: 4302271 DD373til 2 • HAS 4ME D HARRIS SEMICOND SECTOR i l ! H A R R IS CD4015B Types CMOS Dual 4-Stage Static Shift Register With Serial Input/Parallel Output High-Voltage Types 20-Volt Rating * Medium speed op eration.

Contextual Info: TL1464I QUAD PULSE-WIDTH-MODULATION CONTROL CIRCUIT SLVS266 – FEBRUARY 2000 D D D D D D D High-Speed Drive Controller for PNP Power Transistor Internal-Regulator Provides a Stable 1.5 V Reference Supply Low Start-Up Voltage 3.1 V Internal Short-Circuit Protection

Contextual Info: TL1464I QUAD PULSE-WIDTH-MODULATION CONTROL CIRCUIT SLVS266 – FEBRUARY 2000 D D D D D D D High-Speed Drive Controller for PNP Power Transistor Internal-Regulator Provides a Stable 1.5 V Reference Supply Low Start-Up Voltage 3.1 V Internal Short-Circuit Protection