TO247 PACKAGE DISSIPATION Search Results

FCH020WT

Abstract: TO220 HEATSINK DATASHEET SFV019WB SFV019NA Heatsinks TO247 package TO220 package CLIP-03 SVT030AC tag 231
Contextual Info: HEATSINKS & MOUNTINGS TO218 & TO247 package HEATSINKS continued EAV series SFV041ST Compact, high power dissipation, vertical mounting extruded heatsinks with solderable fixing pins. Designed to accommodate a single TO218/TO247 package. Option of screw or clip mount with a choice of

6073b

Abstract: TO220 HEATSINK DATASHEET Heatsinks Heatsinks TO247 TO218 package SW38-4 6098B 6390B PF723 KM150-1
Contextual Info: HEATSINKS & MOUNTINGS HEATSINKS TO218 & TO247 package TO220 package continued 5900PB 30 max. 12.7 Vertical mounting twisted vane heatsink with rugged, solderable tags and a slotted hole to accommodate a single TO218/TO247 package. Black pre-anodised finish bare edges .

Heatsinks TO247

Abstract: TO218 package TO247 package dissipation TO247 package EAB025FH SVB030WT TOP3 package EAC038HC EAB038HC EXK200R
Contextual Info: HEATSINKS & MOUNTINGS HEATSINKS SOT32/TO126 package TO218 & TO247 package Also covers DOP3 I , ISOWATT218, SOD93, SOT93, and TOP3(I) SVB030WT 30 max. 12.7 Twisted vane heatsink with integral fixing tags and a slotted hole designed to accommodate a single SOT32/TO126 package.

TO247 package

Abstract: TO247 package dissipation KD501 TO218 package BW38-4 Heatsinks TO247 TO220 HEATSINK DATASHEET KL50-1 SW63-2 AV17
Contextual Info: HEATSINKS & MOUNTINGS TO202 package HEATSINKS KM series continued 6273B/PB 19.1 L High power dissipation, extruded heatsinks designed to accommodate one or more TO218/TO247 packages via a clip retaining feature clips available separately . Shaped to minimise

diode 104

Abstract: click 0819 SML5023BN
Contextual Info: SEME SML5023BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC

B4015L

Abstract: MBR4015LWT
Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

MBR4015LWT

Abstract: MBR4015LWTG
Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

B4015L

Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

Contextual Info: SEME BFC40 LAB N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49

11N80C3

Abstract: SPW11N80C3
Contextual Info: SPW11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated ID 11 A P-TO247 Type Package

Contextual Info: STW69N65M5-4 N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh V Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS on max ID STW69N65M5-4 710 V 0.045 Ω 58 A • Higher VDS rating 2 • Higher dv/dt capability

am1017

Contextual Info: STW57N65M5-4 N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh V Power MOSFET in a TO247-4 package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID STW57N65M5-4 710 V 0.063 Ω 42 A • Higher VDS rating 1 2 • Higher dv/dt capability

am1117

Abstract: am1017
Contextual Info: STW57N65M5-4 N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh V Power MOSFET in a TO247-4 package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID STW57N65M5-4 710 V 0.063 Ω 42 A • Higher VDS rating 2 • Higher dv/dt capability

FSF03B60

Abstract: FSF10D60 FCU20B60 FSF10B60 FSU10U60 FCF20D60 FSF05B60 FSU08C60 FSU10A60 kcf20b60
Contextual Info: 43 88/ Features • EMI Low EMI due to soft reverse recovery 'Jv £ £ trrS Jg # S i Low high-frequency operating dissipation Low forward transient voltage Small temperature coefficient of trr In full production O ES Sample Availability ^ i/U-X/Standard series

STPS60L40CW

Contextual Info: STPS60L40CW LOW DROP POWER SCHOTTKY RECT F ER MAIN PRODUCTS CHARACTERISTICS I f a v 2x30 A V rrm 40 V Tj (max) 150°C V f (max) 0.50 V A1 — ►- A2 — ►- FEATURES AND BENEFITS • LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION A2 ■ NEGLIGIBLE SWITCHING LOSSES ALLOWING

IGBT for welding inverter

Abstract: IRGP4066D irgps4067d SOLAR INVERTER IRGP4066D-E welding inverter circuit IRGPS4067 IRGP4063D welding igbt igbt welding circuit
Contextual Info: ENERGY SAVINGS THE POWER MANAGEMENT LEADER FEATURES & BENEFITS Reduce Power Dissipation in UPS, Welding and Solar Inverter Applications 600V Trench Field Stop IGBTs • Lower conduction and switching losses compared to previous generation IGBTs. • 175˚C maximum junction temperature.

STPS60L40CW

Abstract: LOW DROP POWER SCHOTTKY RECTIFIER
Contextual Info: STPS60L40CW LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF AV A1 K 2 x 30 A VRRM 40 V Tj (max) 150°C VF (max) 0.50 V A2 FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION NEGLIGIBLE SWITCHING LOSSES ALLOWING

Contextual Info: STPS40L15C Low drop OR-ing power Schottky diode Features Very low forward voltage drop for less power dissipation and reduced heatsink size A1 • Reverse voltage suited to OR-ing of 3 V, 5 V and 12 V rails A2 ■ Avalanche capability specified ■ K K Description

STPS60L40CW

Contextual Info: STPS60L40CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV A1 K 2 x 30 A VRRM 40 V Tj (max) 150°C VF (max) 0.50 V A2 FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION NEGLIGIBLE SWITCHING LOSSES ALLOWING

STPS60L15CW

Contextual Info: STPS60L15CW LOW DROP OR-ing POWER SCHOTTKY DIODE MAJOR PRODUCT CHARACTERISTICS IF AV 2 x 30 A VRRM 15 V Tj (max) 125°C VF (max) 0.33 V A1 K A2 FEATURES AND BENEFITS • ■ ■ ■ VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK SIZE

STPS60L40CW

Contextual Info: STPS60L40CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV A1 K 2 x 30 A VRRM 40 V Tj (max) 150°C VF (max) 0.50 V A2 FEATURES AND BENEFITS n n n LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION NEGLIGIBLE SWITCHING LOSSES ALLOWING

STPS60L40CW

Contextual Info: STPS60L40CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV A1 K 2 x 30 A VRRM 40 V Tj (max) 150°C VF (max) 0.50 V u d o r P e FEATURES AND BENEFITS n n n ) s ( ct A2 LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION NEGLIGIBLE SWITCHING LOSSES ALLOWING