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    TO247 PACKAGE DISSIPATION Search Results

    TO247 PACKAGE DISSIPATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH1R306PL
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Datasheet
    TPH9R00CQH
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Datasheet
    TPH9R00CQ5
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Datasheet
    TPHR8504PL
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Datasheet
    XPH2R106NC
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Datasheet

    TO247 PACKAGE DISSIPATION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FCH020WT

    Abstract: TO220 HEATSINK DATASHEET SFV019WB SFV019NA Heatsinks TO247 package TO220 package CLIP-03 SVT030AC tag 231
    Contextual Info: HEATSINKS & MOUNTINGS TO218 & TO247 package HEATSINKS continued EAV series SFV041ST Compact, high power dissipation, vertical mounting extruded heatsinks with solderable fixing pins. Designed to accommodate a single TO218/TO247 package. Option of screw or clip mount with a choice of


    Original     		SFV041ST O218/TO247 EAV025HC EAV031HC EAV038HC EAV050HC EAV063HC EAV025CL EAV031CL EAV038CL FCH020WT TO220 HEATSINK DATASHEET SFV019WB SFV019NA Heatsinks TO247 package TO220 package CLIP-03 SVT030AC tag 231 PDF

    6073b

    Abstract: TO220 HEATSINK DATASHEET Heatsinks Heatsinks TO247 TO218 package SW38-4 6098B 6390B PF723 KM150-1
    Contextual Info: HEATSINKS & MOUNTINGS HEATSINKS TO218 & TO247 package TO220 package continued 5900PB 30 max. 12.7 Vertical mounting twisted vane heatsink with rugged, solderable tags and a slotted hole to accommodate a single TO218/TO247 package. Black pre-anodised finish bare edges .


    Original     		5900PB O218/TO247 ISOWATT220 6296B, 6298B, 6299B, 6300B SVB030WT 6073b TO220 HEATSINK DATASHEET Heatsinks Heatsinks TO247 TO218 package SW38-4 6098B 6390B PF723 KM150-1 PDF

    6073B

    Abstract: PF751 6043PB 6390B 6391b TO220 HEATSINK DATASHEET 6296B 6022B 7136D ML26AA
    Contextual Info: HEATSINKS & MOUNTINGS HEATSINKS TO218 & TO247 package TO220 package continued 5900PB 30 max. 12.7 Vertical mounting twisted vane heatsink with rugged, solderable tags and a slotted hole to accommodate a single TO218/TO247 package. Black pre-anodised finish bare edges .


    Original     		5900PB O218/TO247 ISOWATT220 6296B, 6298B, 6299B, 6300B SVT030AC FCH020WT 6073B PF751 6043PB 6390B 6391b TO220 HEATSINK DATASHEET 6296B 6022B 7136D ML26AA PDF

    11n80c3

    Abstract: Q67040-S4440 11n80c SPW11N80C3 80011a 11n80
    Contextual Info: SPW11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated Type SPW11N80C3 Package P-TO247


    Original     		SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 11n80c3 Q67040-S4440 11n80c SPW11N80C3 80011a 11n80 PDF

    Heatsinks TO247

    Abstract: TO218 package TO247 package dissipation TO247 package EAB025FH SVB030WT TOP3 package EAC038HC EAB038HC EXK200R
    Contextual Info: HEATSINKS & MOUNTINGS HEATSINKS SOT32/TO126 package TO218 & TO247 package Also covers DOP3 I , ISOWATT218, SOD93, SOT93, and TOP3(I) SVB030WT 30 max. 12.7 Twisted vane heatsink with integral fixing tags and a slotted hole designed to accommodate a single SOT32/TO126 package.


    Original     		OT32/TO126 ISOWATT218, SVB030WT O218/TO247 EAB025NH EAC025HC EAC038HC EAC050HC Heatsinks TO247 TO218 package TO247 package dissipation TO247 package EAB025FH SVB030WT TOP3 package EAC038HC EAB038HC EXK200R PDF

    TO247 package

    Abstract: TO247 package dissipation KD501 TO218 package BW38-4 Heatsinks TO247 TO220 HEATSINK DATASHEET KL50-1 SW63-2 AV17
    Contextual Info: HEATSINKS & MOUNTINGS TO202 package HEATSINKS KM series continued 6273B/PB 19.1 L High power dissipation, extruded heatsinks designed to accommodate one or more TO218/TO247 packages via a clip retaining feature clips available separately . Shaped to minimise


    Original     		6273B/PB O218/TO247 6273B 6273PB 100mm 150mm EAD063NN EAD063TH CLIP-04 EAN025BH TO247 package TO247 package dissipation KD501 TO218 package BW38-4 Heatsinks TO247 TO220 HEATSINK DATASHEET KL50-1 SW63-2 AV17 PDF

    diode 104

    Abstract: click 0819 SML5023BN
    Contextual Info: SEME SML5023BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC


    Original     		SML5023BN diode 104 click 0819 SML5023BN PDF

    B4015L

    Abstract: MBR4015LWT
    Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBR4015LWT r14525 MBR4015LWT/D B4015L MBR4015LWT PDF

    B4015L

    Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package Employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBR4015LWT MBR4015LWT/D B4015L PDF

    SML5020BN

    Abstract: W112A
    Contextual Info: SEME SML5020BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC


    Original     		SML5020BN 380mS SML5020BN W112A PDF

    BFC45

    Contextual Info: SEME BFC45 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC45 BFC45 PDF

    BFC50

    Abstract: BY 126 DIODE DYNAMIC RESISTANCE 1428-TR
    Contextual Info: SEME BFC50 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC50 BFC50 BY 126 DIODE DYNAMIC RESISTANCE 1428-TR PDF

    "VDSS 800V" mosfet

    Abstract: BFC46
    Contextual Info: SEME BFC46 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC46 "VDSS 800V" mosfet BFC46 PDF

    MBR4015

    Abstract: MBR4015LWT MBR4015LWTG
    Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBR4015LWT MBR4015LWT/D MBR4015 MBR4015LWT MBR4015LWTG PDF

    Contextual Info: ICE47N60W Product Summary N-Channel Enhancement Mode MOSFET Features: TO247 Package Low rDS on Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance


    Original     		ICE47N60W 250uA 187nC O-247 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    MBR4015LWT

    Abstract: MBR4015LWTG
    Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBR4015LWT MBR4015LWT/D MBR4015LWT MBR4015LWTG PDF

    BFC42

    Contextual Info: SEME BFC42 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC42 BFC42 PDF

    Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBR4015LWT MBR4015LWT/D PDF

    BFC51

    Abstract: W64A
    Contextual Info: SEME BFC51 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC51 BFC51 W64A PDF

    BFC44

    Abstract: W52A
    Contextual Info: SEME BFC44 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC44 BFC44 W52A PDF

    BFC40

    Abstract: Vdss 1500V
    Contextual Info: SEME BFC40 LAB N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49


    Original     		BFC40 BFC40 Vdss 1500V PDF

    Contextual Info: SEME BFC40 LAB N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49


    Original     		BFC40 PDF

    BFC48

    Contextual Info: SEME BFC48 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC48 BFC48 PDF

    BFC52

    Contextual Info: SEME BFC52 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC52 BFC52 PDF