TO236 FOOTPRINT Search Results

code marking 6z sot-23

Abstract: TO236 footprint Power MOSFET N-Channel sot-23 6Z SOT23 sot-23 MARKING CODE 6Z marking "td" sot23 marking 6Z SOT23 TO-236 footprint MMBF170LT1 MMBF170LT3G
Contextual Info: MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features •ăPb-Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage - Continuous

code marking 6z sot-23

Abstract: marking 6Z SOT23 MMBF170LT1G TO236 footprint MMBF170LT1 MMBF170LT3 MMBF170LT3G MOSFET N SOT-23 sot-23 MARKING CODE 6Z marking CODE 6z
Contextual Info: MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features http://onsemi.com •ăPb-Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage

code marking 6z sot-23

Abstract: diode 6z sot-23 TO-236-3 TO236 footprint Power MOSFET N-Channel sot-23 marking 6Z MOSFET SOT-23 sot-23 MARKING CODE 6Z to-236 MARKING QG 6 PIN
Contextual Info: MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features http://onsemi.com •ăPb-Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage

diode marking 7L SOT23

Abstract: PBRN113ZK 43a sot23 marking 43A sot23 marking code 10 sot23 SC-43A SC-59A PBRN113ZS PBRN113ZT
Contextual Info: PBRN113Z series NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 26 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.

43a sot23

Abstract: PBRN113EK PBRN113ES PBRN113ET SC-43A SC-59A
Contextual Info: PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ Rev. 01 — 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.

MARKING CODE G7 NPN SOT23

Abstract: MARKING G7 NPN SOT23 marking 41 sot23 nxp
Contextual Info: PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.

43a sot23

Abstract: PBRN123EK PBRN123ES PBRN123ET SC-43A SC-59A
Contextual Info: PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.

TO236 footprint

Abstract: 43a sot23 marking code 10 sot23 PBRN123YK PBRN123YS PBRN123YT SC-43A SC-59A
Contextual Info: PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.

MMBZ5221ELT1

Contextual Info: MMBZ5221ELT1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well

PMEG2010AEK

Abstract: SC-59A TO236 footprint
Contextual Info: PMEG2010AEK 1 A very low VF MEGA Schottky barrier rectifier Rev. 01 — 30 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT346 (SC-59A/TO-236)

MMBT3904LT1G

Abstract: MMBT3904LT3G 1N916 MMBT3904LT1 MMBT3904LT3 sot-23 Marking 1am sot 23 marking code 1AM SOA SOT23
Contextual Info: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features •ăPb-Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collectorā-āEmitter Voltage VCEO 40 Vdc Collectorā-āBase Voltage VCBO 60 Vdc Emitterā-āBase Voltage

6W MARKING CODE SOT23

Abstract: MMBFJ175LT1 MMBFJ175LT1G 6w sot23
Contextual Info: MMBFJ175LT1 Preferred Device JFET Chopper P-Channel - Depletion Features •ăPb-Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit VDG 25 V VGS r -25 V Symbol Max Unit

MMBTA42LT1G

Abstract: 1D SOT 23-6 MMBTA42 MMBTA42LT1 MMBTA42LT3 MMBTA42LT3G MMBTA43 MMBTA43LT1 MMBTA43LT1G MMBTA42LT
Contextual Info: MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 is a Preferred Device High Voltage Transistors NPN Silicon Features •ăPb-Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Characteristic Symbol Collectorā-āEmitter Voltage Value Unit VCEO MMBTA42 MMBTA43

AO3460

Abstract: AO3460L 065A
Contextual Info: AO3460 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3460/L uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide

TO236 footprint

Abstract: TO-236-AA
Contextual Info: Power Packages SOT-23 TO-236AA SMALL OUTLINE TRANSISTOR INCHES D A b TYP E A1 E1 c L e CL e 1 MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.031 0.050 0.80 1.27 - A1 0.004 0.010 0.10 0.25 - b 0.015 0.020 0.37 0.51 - c 0.0035 0.0059 0.089 0.150 - D 0.110 0.120

S1217

Abstract: TO-92-18RM
Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS (V) RDS(on) () VGS(th) (A) 240 4 at VGS = 10 V 0.8 to 2 ID (A) 0.2 TN2404K TN2404K, BS107KL • • • • • Qg (Typ.) 0.3 4.87 nC Low On-Resistance: 4 

Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS (V) RDS(on) () VGS(th) (A) 240 4 at VGS = 10 V 0.8 to 2 ID (A) 0.2 TN2404K TN2404K, BS107KL • • • • • Qg (Typ.) 0.3 4.87 nC Low On-Resistance: 4 

MMBTA42LT1G

Abstract: MMBTA42 MMBTA42LT1 MMBTA42LT3 MMBTA42LT3G MMBTA43 MMBTA43LT1
Contextual Info: MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Characteristic Symbol Collectorā-āEmitter Voltage Value Unit VCEO

NSS12201LT1G

Abstract: HIGH SPEED SWITCHING NPN SOT23
Contextual Info: NSS12201LT1G 12 V, 4.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

marking VL

Abstract: NSS1C200LT1G
Contextual Info: NSS1C200LT1G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

NSS40201LT1G

Abstract: HIGH SPEED SWITCHING NPN SOT23 marking VB
Contextual Info: NSS40201LT1G 40 V, 4.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

MMBTA42

Abstract: MMBTA42LT1 MMBTA43 MMBTA43LT1 MMBTA43LT3
Contextual Info: MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 is a Preferred Device High Voltage Transistors NPN Silicon MAXIMUM RATINGS Rating http://onsemi.com Symbol MMBTA42 MMBTA43 Unit Collector - Emitter Voltage VCEO 300 200 Vdc Collector - Base Voltage VCBO 300 200 Vdc Emitter - Base Voltage

NSS60201LT1G

Contextual Info: NSS60201LT1G 60 V, 4.0 A, Low VCE sat NPN Transistor ON Semiconductor's e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

On semiconductor date Code sot-23

Abstract: IC data book free download sot-23 body marking A 4 TO-236 sot-23 Marking G1 Tape and Reel Packaging Specifications Code sot-23 on semiconductor 1N914 transistor data sheet free download G1 SOT-23 marking codes transistors a1 sot-23
Contextual Info: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Value VCEO MMBT5550 MMBT5551 Collectorā-āBase Voltage