TO225AA CASE Search Results

MJE13005A

Abstract: MJ4361 MJ3237 MJE10001 MJ2901 MJ9000 MJ430 MJE240 MJE4923 MJ2252
Contextual Info: STI Type: MJ13330 Notes: Polarity: NPN Power Dissipation: 175 VCEV: 400 VCEO: 200 ICEV: 400 ICEV A: .25 hFE: 8.0 hFE A: 15 VCE: 1.5 VBE: 1.8 IC: 10 COB: 400 fT: 5.0 Case Style: TO-204AA/TO-3: Industry Type: MJ13330 STI Type: MJ13101 Notes: Polarity: NPN Power Dissipation: 175

C106 MG

Abstract: C106MG transistors C106 MG scr c106mg SCR C106D equivalent circuit C106D1G c106d pin out SCR C106m equivalent circuit C106D SCR equivalent SCR C106D
Contextual Info: C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is

C106MG

Abstract: scr c106mg C106 MG SCR C106D equivalent circuit SCR C106m equivalent circuit C106D SCR equivalent equivalent SCR c106 C106D1G scr C106D CHARACTERISTICS c106d equivalent
Contextual Info: C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is

scr C106B

Abstract: SCR C106D1 C106 Series scr C106D CHARACTERISTICS C106 c106m c106 scr SCR c106 c106d scr C106D
Contextual Info: C106 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is

MTP3055A

Abstract: MTM12N06 mtp25n06 MTM20N08 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08

2n6071a

Abstract: 2n6075a triac firing circuit TRIAC 2N6071 A to225a 2N6075
Contextual Info: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are

BD436

Abstract: TRANSISTOR bd436 Power Transistors TO-225aa Case BD437 BD438 BD440 BD441 BD442 transistor Bu BD438 pin out
Contextual Info: BD436, BD438, BD440, BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

C106D1 pin out diagram

Abstract: C106 MG C106MG c106d pin out c106mg pin out scr c106mg equivalent SCR c106 SCR C106D equivalent circuit show to-225aa package SCR C106m
Contextual Info: C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is

2N6073A

Abstract: 2N6075B to225aa to126 case 2N6071A 2N6071B 2N6073B 2N6075A MC7400
Contextual Info: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are

to225a

Abstract: 2N6071B 2N6071A 2N6073A 2N6073B 2N6075A 2N6075B MC7400 to225aa
Contextual Info: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are

to225

Contextual Info: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are

C106D1

Abstract: scr C106 scr C106B c106 scr SCR C106D1 c106d pin out circuit using c106d1 SCR C106D SCR C106m C106
Contextual Info: C106 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is

MJE520

Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic

c106d pin out

Abstract: scr C106 C106 Series C106D to-126 scr C106D CHARACTERISTICS C106 C106B SCR C106m transistor c106 c106 scr
Contextual Info: C106 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is

scr C106

Abstract: c106d pin out to225aa SCR C106m scr C106B SCR C-106B C106D to-126 scr C106D C106 Series c106 scr
Contextual Info: C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is

2N6071A

Abstract: 2N6071B 2N6073A 2N6073B 2N6075A 2N6075B MC7400
Contextual Info: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are

scr C106

Abstract: c106d pin out scr C106D scr C106B SCR C106D equivalent circuit SCR C106m C106 Series SCR 106 B circuit using c106d1 C106d silicon controlled rectifier
Contextual Info: C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is

c106d pin out

Abstract: SCR 1 c106d scr C106B c106 scr c106d1 scr c106d application notes C106D to-126 C106 Series C106d silicon controlled rectifier C106 Series scr
Contextual Info: C106 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is

mtp25n06

Abstract: MTP12P05 MTP3055A MTP14N05A BUZ11 motorola MTP15N06 BUZ11 MTP5N05 T0-225AA MTP15N05
Contextual Info: POWER TRANSISTORS — TMOS PLASTIC continued Plastic TMOS Power MOSFETs — T0-220AB (continued) C A S E 221A-02 VBR(DSS) (Volts) Min (Ohms) Max (Amp) 60 0.4 4 F'D @ TC = 25°C (Watts) Max IRF523 7 40 IRF521 8 Device 0.3 6 MTP12P06* 12 0.28 5 MTP10N06 10

WD19

Abstract: T2322B
Contextual Info: T2322B Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances their use in low-power phase

Contextual Info: FS04.K SENSITIVE GATE SCR On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage 400 V ÷ 800 V TO-225AA TO-126 K FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability

fs0402dk

Abstract: FS0402
Contextual Info: FS04.K SENSITIVE GATE SCR On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage 400 V ÷ 800 V TO-225AA TO-126 K FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability

mtp15n06

Abstract: MTP12P05 mtp25n06 MTP3055A MTP14N05A BUZ10 MTP12p06 MTA6N10 T0-225AA MTP2P50
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1

Contextual Info: FT04.K LOGIC LEVEL TRIAC On-State Current 4 Amp TO-225AA TO-126 Gate Trigger Current < 10 mA Off-State Voltage 400 V ÷ 800 V FEATURES • Glass/passivated die junctions • Medium current Triac • Ideal for automated placement • Low thermal resistance