TO220S Search Results

Sanken 2011

Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC ２ＳＫ３７１０ May. 2011 Package Features ･ Low on-state resistance 5.0mΩ VGS=10V ･ Built-in gate protection diode ･SMD PKG TO220S Applications ･DC−DC converter ･Mortar drive Internal Equivalent Circuit

relay 5v 30a

Abstract: Si520 si5201
Contextual Info: Semiconductor relay SI-5201 March 2007 •Package ■General Description SI-5201 is an intelligent high-side switch with TO220S-7 N-channel power MOSFET available in Sanken’s TO220S-7 package. Over current and thermal shutdown circuits are integrated with control logic circuit in

MN638S

Abstract: ic 3A hfe 500
Contextual Info: Power Transistor MN638S Test Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA External Dimensions TO220S 4.44±0.2 10.2±0.3 1.3±0.2 V a +0.3 ICBO IEBO V BR CEO hFE VCE (sat) (Ta=25ºC) Unit µA mA V Ratings 10max 20max 330 to 430 1500min

10A Schottky

Abstract: MPE-29G
Contextual Info: Power Surface Mount 90V, 20A Schottky barrier diode in TO220S package MPE-29G •Absolute maximum ratings Parameter Ratings Unit VRM 90 V IF AV 20 A IFSM 120 A I t 72 2 A s Tj – 40 to +150 °C Tstg – 40 to +150 °C 2 ■Electrical characteristics Conditions

SPF0001

Abstract: sta464c MN638S sta509a sanken S-60W STA464 SLA5027
Contextual Info: Transistors and MOS FETs Index by Load Load Current Approx. 0.5A Approx. 1.2A Approx. 3A Approx. 5A 10A and over Part No. Chip Single Package Avalanche Diode TO220F TO220S Multi-chip Package SPF SD Surface-mount (Surface-mount) STA SMA SLA Remarks 2SA1488A

SANKEN power supply

Abstract: SI-5201 Relay 5V, 10A, sanken sanken power transistor SANKEN SI B105 CF35 relay 5v 5a, 5 pin relay 5v 30a
Contextual Info: Semiconductor relay SI-5201 March 2007 •Package ■General Description SI-5201 is an intelligent high-side switch with TO220S-7 N-channel power MOSFET available in Sanken’s TO220S-7 package. Over current and thermal shutdown circuits are integrated with control logic circuit in

Contextual Info: Power Transistor MN638S Test Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA External Dimensions TO220S 4.44±0.2 10.2±0.3 1.3±0.2 V a +0.3 ICBO IEBO V BR CEO hFE VCE (sat) (Ta=25ºC) Unit µA mA V Ratings 10max 20max 330 to 430 1500min

ldpak

Abstract: PRSS0004AB PRSS0004AE
Contextual Info: Unit:mm Reel type A A 330 N 100 W1 25.5 W2 29.5 Dimensions mm A0 B0 K0 10.8 13.9 4.9 F 11.5 D1 2 Maximum storage No. Transistor/Reel 1000 24-mm width emboss taping Taping code Package name MTE2412G-TO220S TO-220S TE2412-31P, 32P LDPAK(S)-(1) TE2416-13P

Contextual Info: NTE2911 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220SIS Type Package Features: D Low Drain−Source ON−Resistance D High Forward Transfer Admittance D Low Leakage Current D Enhancement Mode Absolute Maximum Ratings: TA = +25°C, Note 1 unless otherwise specified

Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC ２ＳＫ３７１０ Features ･ Low on-state resistance 5.0mΩ VGS=10V ･ Built-in gate protection diode ･SMD PKG May. 2011 Package TO220S Applications ･DC－DC converter ･Mortar drive Internal Equivalent Circuit

2SK1928

Contextual Info: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance

Contextual Info: TO SHIBA 2SK2376 T O S H IB A FIELD EFFECT TRA N SISTO R SILICON N C H A N N EL M O S T Y PE L2-tt- M O S V 2SK2376 HIGH SPEED , HIGH C U RREN T SW IT C H IN G A PPLIC A TIO N S INDUSTRIAL APPLICATIONS Unit in m m TO-22QFL C H O PPER REG U LA TO R, DC-DC C O N V ER T ER A N D M O T O R DRIVE

Contextual Info: TK8A25DA MOSFETs Silicon N-Channel MOS π-MOS TK8A25DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

TK72A

Contextual Info: TK72A12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK72A12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)

tk12a65d

Abstract: tk12a65
Contextual Info: TK12A65D MOSFETs Silicon N-Channel MOS π-MOS TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)

Contextual Info: TJ150F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)

tk8a60

Contextual Info: TK8A60W MOSFETs Silicon N-Channel MOS DTMOS TK8A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

5A 700V MOSFET

Abstract: 700v 5A mosfet
Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: TK5A65D * Category: Transistors /Power MOSFET/Nch 500V<VDSS 700V

TJ9A10M3

Contextual Info: TJ9A10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ9A10M3 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)

Contextual Info: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)

TK16A60W

Abstract: TK16
Contextual Info: TK16A60W MOSFETs Silicon N-Channel MOS DTMOS TK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

50v AC to 12v 15A dc circuit diagrams

Abstract: MIC4685BM 24v 12v 20A regulator voltage circuit diagram
Contextual Info: MIC4685 Micrel MIC4685 3A SPAK SuperSwitcher Buck Regulator Final Information General Description Features The MIC4685 is a high-efficiency 200kHz stepdown buck switching regulator. Power conversion efficiency of above 85% is easily obtainable for a wide variety of applications.

VN66AFD

Abstract: vn66a
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS<on) Max (&) VGS(th) (V) I d (A) 1.8 e v Gs = io v 0.5 to 2 0.47 0.8 to 2 0.33 0.8 to 2.5 1.46 TN0601L VN0606L 3e 60 VN66AFD v as = io v

transistor VN46AFD

Abstract: VN46AFD TO220SD
Contextual Info: VN46AFD N-Channef Enhancement-Mode M O S Transistor B W SgA PRODUCT SUMMARY V BR|DSS 'i r 40 3 Id (A FRONT VIEW TO-220SD o 1.46 Performance Curves: VNDQ06 1 SOURCE 2 GATE 3 & TAB - DRAIN 123 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) SYM BOL