TO220 SEMICONDUCTOR PACKAGING Search Results

ebonol

Abstract: 637-10ABEP WTS001 MO-169 217-36CT6 634-20ABEP 637-15ABEP 236-150ABE-01 abe sot-223 sot-223 package dimensions
Contextual Info: WTS001_p1-25 6/14/07 10:54 AM Page 22 Board Level Heat Sinks BOARD LEVEL POWER SEMICONDUCTOR HEAT SINKS Surface Mount Heat Sinks 217 SERIES D 2PAK, TO-220, SOT-223, SOL-20 Compatible with surface mount technology SMT automated production techniques for ease of assembly and a variety of soldering methods, these heat sinks allow greater packaging densities and reduction in PC-board area, increasing the power dissipation of surface mount devices (SMDs) while maintaining and improving manufacturers'

ebonol

Abstract: 260-4TH5B ebonol c black 205cb AB-275 204-CB TUBE 1625 5 lead dd pak weight 260-6SH5B 205-CB
Contextual Info: Board Level Heat Sinks BOARD LEVEL POWER SEMICONDUCTOR HEAT SINKS 217 SERIES Surface Mount Heat Sinks D 2PAK, TO-220, SOT-223, SOL-20 Compatible with surface mount technology SMT automated production techniques for ease of assembly and a variety of soldering methods, these heat sinks allow greater packaging densities and reduction in PC-board area,

tps793xxdbv

Abstract: Cross Reference sot23 TLV1117CKCS TPS736xxDBV INFINEON NSC SOT23 NMOS TI Cross Reference Search TPS780 LT1963A TLV1117
Contextual Info: Low Dropout Regulators Quick Reference Card 1Q09 Low dropout regulators LDOs are a simple, inexpensive way to regulate an output voltage powered from a higher voltage input. The most critical LDO parameters are input voltage range, output voltage, output current, dropout voltage, packaging size, power

TRANSISTOR TIP31

Abstract: TIP31 NPN Transistor TO220 Semiconductor Packaging transistor cross reference Cross-Reference DATE transistor crossreference application TIP31 Tip31
Contextual Info: TIP31 Series TIP31/31A/31B/31C TIP31 Series(TIP31/31A/31B/31C) Medium Power Linear Switching Applications • Complementary to TIP32/32A/32B/32C TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted

tip42

Abstract: TIP42BTU transistor tip41 tip42c
Contextual Info: TIP42 SERIES TIP42/42A/42B/42C TIP42 SERIES(TIP42/42A/42B/42C) Medium Power Linear Switching Applications • Complement to TIP41/41A/41B/41C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSA473 KSA473 Low Frequency Power Amplifier Power Regulator • Collector Current : IC= -3A • Collector Dissipation : PC = 10W TC=25°C • Complement to KSC1173 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

ksa940

Contextual Info: KSA940 KSA940 Vertical Deflection Output Power Amplifier • Complement to KSC2073 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

Contextual Info: KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 1.Base TO-220 2.Collector 3.Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

Contextual Info: TIP32 Series TIP32/32A/32B/32C TIP32 Series(TIP32/32A/32B/32C) Medium Power Linear Switching Applications • Complement to TIP31/31A/31B/31C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

OF TRANSISTOR AT 30B

Contextual Info: TIP30 Series TIP30/30A/30B/30C TIP30 Series(TIP30/30A/30B/30C) Medium Power Linear Switching Applications • Complementary to TIP29/29A/29B/29C TO-220 1 1.Base PNP Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted

TRANSISTOR KSC5027

Abstract: KSC5027 KSC5027OTU *c5027-r
Contextual Info: KSC5027 KSC5027 High Voltage and High Reliability • High Speed Switching • Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value

OF TRANSISTOR AT 30B

Abstract: TIP29C cross reference Fairchild Semiconductor tip29
Contextual Info: TIP29 Series TIP29/29A/29B/29C TIP29 Series(TIP29/29A/29B/29C) Medium Power Linear Switching Applications • Complementary to TIP30/30A/30B/30C TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSC2335 KSC2335 High Speed, High Voltage Switching • Industrial Use TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 500 Units

20100CT

Abstract: 2060CT 2080CT MBR20100CT MBR2060CT MBR2060CTG MBR2080CT MBR2090CT
Contextual Info: MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT MBR2060CT and MBR20100CT are Preferred Devices SWITCHMODE Power Rectifiers This seriesĂuses the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

Contextual Info: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSD288Y

Abstract: KSD288YTU
Contextual Info: KSD288 KSD288 Power Regulator Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO=80V • Collector Dissipation : PC=25W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSD880Y

Contextual Info: KSD880 KSD880 Low Frequency Power Amplifier • Complement to KSB834 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage

Contextual Info: TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use

Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter

KA337

Abstract: negative VOLTAGE REGULATOR 3.7v KA337TU
Contextual Info: www.fairchildsemi.com KA337 3-Terminal 1.5A Negative Adjustable Regulator Features Description • • • • • • • The KA337 is a 3-terminal negative adjustable regulator. It supply in excess of 1.5A over an output voltage range of -1.2V to - 37V. This regulator requires only two external

Contextual Info: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor

Contextual Info: KSD73 KSD73 Low Frequency High Power Amplifier • Collector-Base Voltage : VCBO = 100V • Collector Current : IC = 5A • Collector Dissipation : PC = 30W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

LINFINITY LX8383A

Abstract: 3845b power supply 3845b 2842ad8 intel 965 motherboard circuit diagram UC2843D CS830 uc3842 switching power supply with 3843b IRF6345
Contextual Info: Automotive Products Guide INSTRUMENTATION - GAUGE DRIVERS GAUGES DRIVEN PART NUMBER MAJOR CS-289 1 CS-3750 1 CS-4101 1 CS-4102 1 CS-4121 1 CS-4172 1 CS-8190 1 CS-8191 1 INPUT MINOR FREQ. PWM SPI CURRENT • DRIVE METHOD 20 mA • • • 2 FEATURES OUTPUT

Contextual Info: MTP2955V P-Channel Enhancement Mode Field Effect Transistor Features General Description • -12 A, -60 V. RDS ON = 0.230 Ω @ VGS = -10 V This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.