TO202 PACKAGE Search Results

T0409

Contextual Info: FT04.E/F SENSITIVE TRIAC TO202-1 E TO202-3 (F) On-State Current Gate Trigger Current 4 Amp < 5 mA to < 10 mA Off-State Voltage 200 V ÷ 600 V MT2 MT2 These series of Silicon Controlled Rectifier use a high performance PNPN technology. MT1 MT1 MT2 MT2 G

triac to-202-3

Abstract: triac mw 134
Contextual Info: FT04.E/F STANDARD TRIAC TO202-1 E TO202-3 (F) On-State Current Gate Trigger Current 4 Amp < 25 mA Off-State Voltage 200 V ÷ 600 V MT2 MT2 These series of Silicon Controlled Rectifier use a high performance PNPN technology. MT1 MT1 MT2 MT2 G G These parts are intended for general purpose

fs04

Abstract: scr fs04 1015i2 scr 209 TL 413 K
Contextual Info: FS04.E/F SENSITIVE GATE SCR TO202-1 E TO202-3 (F) On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V MT2 MT2 These series of Silicon Controlled Rectifier use a high performance PNPN technology. MT1 MT1 MT2 MT2 G G These parts are intended for general purpose

NTE269

Abstract: TO202 package NTE268 SILICON COMPLEMENTARY transistors darlington 956b
Contextual Info: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require-

TO247 package

Abstract: TO247 package dissipation KD501 TO218 package BW38-4 Heatsinks TO247 TO220 HEATSINK DATASHEET KL50-1 SW63-2 AV17
Contextual Info: HEATSINKS & MOUNTINGS TO202 package HEATSINKS KM series continued 6273B/PB 19.1 L High power dissipation, extruded heatsinks designed to accommodate one or more TO218/TO247 packages via a clip retaining feature clips available separately . Shaped to minimise

NTE211

Abstract: NTE210
Contextual Info: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications

NTE5457

Abstract: NTE5455 NTE5456 SCR NTE5457 NTE5452 NTE5458 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive
Contextual Info: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be

nte268

Contextual Info: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.

Contextual Info: Z04 4 A Triacs Main features TO202-3 Symbol Value Unit IT RMS 4 A VDRM/VRRM 600 to 800 V IGT (Q1) 3 to 25 mA Order codes Part Number Marking Z04xxyF(1) Z04xxyF(1) 1. xx = sensitivity, y = voltage Description A2 The Z04 series is suitable for general purpose AC

darlington complementary power amplifier

Abstract: PNP Relay Driver SILICON COMPLEMENTARY transistors darlington nte269 TO202 package NTE268 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS current amplifier note darlington
Contextual Info: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.

X0405MF 1AA2

Contextual Info: X04 Series 4A SCRS TO202-3 X04xxF MAIN FEATURES: Symbol Value Unit IT(RMS) 4 A V DRM/VRRM 600 and 800 V IGT 50 to 200 µA DESCRIPTION Thanks to highly sensitive triggering levels, the X04 SCR series is suitable for all applications where the available gate current is limited, such as

NSD102

Abstract: D42C5 040e5 NSE180 2N4945 NSE871 d42c2 TO-202 transistor NPN NSDU05 2N6714
Contextual Info: NATL SEMICOND DISCRETE 5SE D • bSG1130 Ci a377a4 T ■ T-27-0! NPN Medium Power Transistors by Ascending Vceo Part No. Hfe a lc /V ce Vceo (V) NSE871 TN1711 ’ Vce (sat) (V) Ic/lb M ax (mA)/(mA) Min M ax (m A/V) 50 40 300 25/20 500/10 1.5 150 Package

bd817

Abstract: B0815 B0817 2SC2068 2SC2068R 2SC2068Y BF858 BF859 CSC2611 CSC2621
Contextual Info: TO-202 PLASTIC PACKAGE TRANSISTORS NPN No. 2SC2068 'C BO V CBO V ECO V EBO (V) (V) (V) (PA) Min Mir Min Max 300 300 5.0 1.0 « vCB hFE 300 300 5.0 1.0 Min 240 240 300 300 5.0 1.0 240 2SC2068Y 300 300 5.0 1.0 240 BF859 300 300 5.0 0.1 CSC2611 300 300 5.0

NSD134

Abstract: NSD459 NSD458 NSD133 NSE459 TO-202 D40N2 2N3440 nse458 2N6712
Contextual Info: NATL SEMICOND DISCRETE 52E D • T Z‘ 2~7~0/ bSG113Q 0D377flb 3 ■ NPN Medium Power Transistors by Ascending Vceo (continued) Part No. Vceo (V) Min Hfe @ lc/Vce Max ' (mA/V) Vce (sat) (V) Max lc/lb Package (mA)/(mA) PN7055 220 40 10/20 1.0 20 TO-92 D40P5

B0815

Abstract: csc2821c bd817 B0817 2SC2068 2SC2068R 2SC2068Y BF858 BF859 CSC2611
Contextual Info: TO-202 PLASTIC PACKAGE TRANSISTORS NPN No. 2SC2068 'C B O V CBO V ECO V EBO (V) (V) (V) (PA) Min Mir Min Max 300 300 5.0 1.0 « vCB hFE 300 300 5.0 1.0 Min 240 240 300 300 5.0 1.0 2SC2068Y 300 300 5.0 1.0 120 BF859 300 300 5.0 0.1 CSC2611 300 300 5.0 CSC2621

b0816

Abstract: BD814 b0814 BD818 BD840 BD816 BD826 BD828 BD842 BD844
Contextual Info: TO-202 PLASTIC PACKAGE TRANSISTORS PNP M a x im u m R a tin g s Type No. VCB0 (V) V ECO V EBO (V) (V) (MA) Min Min Min Max BD818 100 60 5.0 BDS30 100 80 5.0 'cBO 0.1 VCB (V) 30 « hpE CSA743A 80 80 80 5.0 5.0 5.0 50 60 60 5.0 BD828 60 60 5.0 30 CSA743 50

motorola to-202

Abstract: 2SC685 2SC2241
Contextual Info: POWER SILICON NPN Item Number Part Number 10 15 20 25 30 fT hFE Min I C 5 V(BR)CEO Manufacturer Max (Hz) t, ICBO Max (A) Max 8) tf Max (8) PD Max (W) Toper Max °C) Package Style < 1 A, (Co nt' d) 100m 100m 100m 100m .10 100m 100m 100m 100m 100m 300 300 300

b0816

Abstract: BD816 BD814 BD818 BD826 BD828 BD842 BD844 CSA743 CSA743A
Contextual Info: TO-202 PLASTIC PACKAGE TRANSISTORS PNP M a x im u m R a tin g s Typ» No. VCB0 (V) V ECO V EBO (V) (V) (MA) Min Min Min Max BD818 100 60 5.0 BDS30 100 80 5.0 'cBO 0.1 VCB (V) 30 « hpE CSA743A 80 80 80 5.0 5.0 5.0 50 60 60 5.0 BD828 60 60 5.0 30 CSA743 50

6098B

Abstract: TO202 package SW253 SW63-6 PF527 6099B TO218 package CLP-204 6100B to3 HEATSINK
Contextual Info: HEATSINKS & MOUNTINGS HEATSINKS TO39/TO5 package TO3 package 5F series PF527 Extruded push-on heatsinks to fit a single TO39/TO5 package. Choice of thermal resistance. Space saving clamp-over heatsink to fit a single TO3 package. Th. Res. Manf. Part No. &

SH400R28B

Abstract: Thyristor 40V 12A TN-41A SM6J44 SM1J43 SH400R29B SH5G41
Contextual Info: High Speed Thyristors -> Peak Repetitive Oft-state Voltage and Reverse Voltage Package i 0.3A c g> 2A 3 o 400A CO c O a» O CO a> > < Turn-Off time TO-92 200V 6 ms TO-202 15 ms 035 Flat 25 035 Flat 25 ms 035 Flat 40 300V SH0R3D42 SH2G41 |JS MS -» Peak Repetitive Off-State vottage

Contextual Info: SEMELAB LTD •type No. SpUon'¡ty Polarl,y 37E D •c cont Package V C E 0 t’ FE @ ■ Vc e /Ic fll331fl? GG0G043 1 ■ SMLB «T PD BD746 BD 7 4 6 A BD 7 4 6 B B D7 4 6 C BD 7 4 6 D PNP PNP PNP PNP PNP SOT 9 3 SOT 9 3 SOT93 SOT 9 3 S OT 9 3 45 60 80 100

SF3G42

Abstract: SF2R5G42 Thyristor 1000v to 5000v TO220SM SF3J42 SF25GZ51 SF2R5G SF2500EX22 300a 1000v thyristor SF300hx
Contextual Info: Thyristor & T rigger Device General Purpose Thyristors -> Peak Repetitive Off-state Voltage and Reverse Voltage Average On-state Current «- Package Q.3A 0.SA 200V 400V TO-92 SF0R3G42 TO-92 SR0R5G43 PW-Mini USF05G49 600V SF0R5J43 2A TO-202 SF2G41 2.5A TO-202

TO-202 transistor

Abstract: thyristor 406 thyristor SCR 406 scr To 202 SCR TRIAC 0406 transistor AG 307 202 N thyristor
Contextual Info: Package Details - TO-202 Thyristor Mechanical Drawing SYMBOL A B C D E F DIA G H J K L M N DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.057 0.061 1.45 1.55 0.019 0.021 0.49 0.52 0.175 0.180 4.44 4.56 0.376 0.388 9.55 9.85 0.118 0.134 3.00 3.40 0.124 0.126 3.15

GT 32 DIAC specification sheet

Abstract: Q6016RH4 equivalent TO812NH specifications TYN604 scr TO805MH Transistor s106d1 TO805MH equivalent smd transistor E72 transistor c103m S6015L equivalent
Contextual Info: Thyristor Product Catalog Teccor Electronics 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Website: http://www.teccor.com E-mail: power.techsales@teccor.com 2002 Teccor Electronics Thyristor Product Catalog