FS04 Search Results

B88069X0410T502

Abstract: FS04X-1JMG
Contextual Info: Switching Spark Gap FS04X-1JMG Ordering code: B88069X0410T502 Nominal breakdown voltage VN Initial values Static breakdown voltage VS 1 2) First ignition value VS, FTE after 24 hours in darkness Following ignition values selection limits) Following ignition values VS, FIV

scr fs04

Contextual Info: FS04.D SURFACE MOUNT SCR DPAK Plastic On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage 200 V ÷ 600 V A K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general

FS0402

Contextual Info: FS0402.H SENSITIVE GATE SCR TO220-AB On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage MT2 200 V ÷ 600 V These series of Silicon Controlled R ectifier use a high performance PNPN technology. MT1 These parts are intended for general purpose applications where high gate

FS04

Abstract: JA01 SCR I-PAK
Contextual Info: FS04.I SENSITIVE GATE SCR IPAK Plastic On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage 200 V ÷ 400 V A These series of Silicon Controlled Rectifier use a high performance PNPN technology. K A G These parts are intended for general purpose

Contextual Info: FS04.E/F SENSITIVE GATE SCR TO-202-1 E TO-202-3 (F) G 4 Amp to 200 µA 200 V ÷ 800 V A K A Gate Trigger Current Off-State Voltage A K On-State Current A G These series of Silicon Controlled Rectifier use a high performance PNPN technology. These parts are intended for general

Contextual Info: FS04.H SENSITIVE GATE SCR TO-220-AB On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage 200 V ÷ 800 V KA These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general purpose applications where high gate

Contextual Info: FS04.K SENSITIVE GATE SCR TO-225AA / TO-126 On-State Current Gate Trigger Current 4 Amp to 200 µA Off-State Voltage 200 V ÷ 800 V K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general

Contextual Info: FS04.D SENSITIVE GATE SCR DPAK Plastic Gate Trigger Current On-State Current 4 Amp < 200 mA Off-State Voltage 200 V ÷ 800 V K These series of Silicon Controlled Rectifier use a high performance PNPN technology. A G A These parts are intended for general

Contextual Info: FS04.K SENSITIVE GATE SCR TO-225AA / TO-126 On-State Current Gate Trigger Current 4 Amp to 200 µA Off-State Voltage 200 V ÷ 800 V K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general

Contextual Info: FS04.E/F SENSITIVE GATE SCR TO-202-1 E TO-202-3 (F) G 4 Amp to 200 µA 200 V ÷ 800 V A K A Gate Trigger Current Off-State Voltage A K On-State Current A G These series of Silicon Controlled Rectifier use a high performance PNPN technology. These parts are intended for general

SCR TRIGGER PULSE circuit

Abstract: FS0402
Contextual Info: FS0402.H SENSITIVE GATE SCR TO220-AB On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage A 200 V ÷ 600 V These series of Silicon Controlled R ectifier use a high performance PNPN technology. K These parts are intended for general purpose applications where high gate

FS0402

Contextual Info: FS0402.H SENSITIVE GATE SCR TO220-AB On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage MT2 200 V ÷ 600 V These series of Silicon Controlled R ectifier use a high performance PNPN technology. MT1 These parts are intended for general purpose applications where high gate

scr to-126

Contextual Info: FS04.K SENSITIVE GATE SCR TO-225AA / TO-126 On-State Current Gate Trigger Current 4 Amp to 200 µA Off-State Voltage 200 V ÷ 800 V K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general

Contextual Info: FS04.H SENSITIVE GATE SCR TO-220-AB On-State Current Gate Trigger Current 4 Amp < 200 µA Off-State Voltage 200 V ÷ 800 V K A G These series of Silicon Controlled Rectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate

Contextual Info: Switching Spark Gap FS04X-1JM Ordering code: B88069X0400S102 Nominal breakdown voltage VN Initial values Static breakdown voltage VS 1 2) First ignition value VS, FTE after 24 hours in darkness Following ignition values selection limits) Following ignition values VS, FIV

54IH

Abstract: scr 209
Contextual Info: FS04.D SENSITIVE GATE SCR DPAK Plastic Gate Trigger Current On-State Current 4 Amp < 200 mA Off-State Voltage 200 V ÷ 800 V K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general

Contextual Info: FS04.I SENSITIVE GATE SCR IPAK Plastic On-State Current Gate Trigger Current 4 Amp < 200 mA Off-State Voltage 200 V ÷ 800 V K A G These series of Silicon Controlled Rectifier use a high performance PNPN technology. These parts are intended for general

Contextual Info: FS04.H SENSITIVE GATE SCR TO-220-AB On-State Current Gate Trigger Current 4 Amp < 200 A Off-State Voltage 200 V ÷ 800 V K A G These series of Silicon Controlled Rectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate

b341

Contextual Info: SN54F27, SN74F27 TRIPLE 3-INPUT POSITIVE-NOR GATES SD FS042A -MARCH 1987 - REVISED OCTOBER 1993 • Package Options Include Plastic Small-Outline Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs SN54F27 . . . J PACKAGE S N 74F27. . . D OR N PACKAGE

FS04X-1JMG

Abstract: electronic ignition B88069X0410T502
Contextual Info: Switching Spark Gap FS04X-1JMG Ordering code: B88069X0410T502 Preliminary data Nominal breakdown voltage VN Initial values Static breakdown voltage VS 1 2) First ignition value VS, FTE after 24 hours in darkness Following ignition values selection limits)

spark gap

Abstract: FS04X-1JM marking CODE VN
Contextual Info: Switching Spark Gap FS04X-1JM Ordering code: B88069X0400S102 Nominal breakdown voltage VN Initial values Static breakdown voltage VS 1 2) First ignition value VS, FTE after 24 hours in darkness Following ignition values selection limits) Following ignition values VS, FIV

Contextual Info: FS04.I SENSITIVE GATE SCR IPAK Plastic On-State Current Gate Trigger Current 4 Amp < 200 mA Off-State Voltage 200 V ÷ 800 V K A G These series of Silicon Controlled Rectifier use a high performance PNPN technology. These parts are intended for general

Contextual Info: FS04.K SENSITIVE GATE SCR TO-225AA / TO-126 On-State Current Gate Trigger Current 4 Amp to 200 µA Off-State Voltage 200 V ÷ 800 V K A These series of Silicon Controlled Rectifier use a high performance PNPN technology. G These parts are intended for general

Contextual Info: D FS04 2 .0 m m FEMALE HEADER SMT TYPE SPECIFICATION Insulator: NYL0N-6T or 9T .rated UL94V-0 . Black Contact: Phosphor Bronze C u rre n t ratin g : 1 Amps m ax. C o n ta ct re s is ta n c e : 2 0 m oh m s m ax. In su latio n re s is ta n c e : 5 0 0 0 Megohms m in. 5 0 0 VDC