TO-66 CASE Search Results

Contextual Info: SN65LV1023A/SN65LV1224A 10ĆMHz TO 66ĆMHz, 10:1 LVDS SERIALIZER/DESERIALIZER SLLS570D − JUNE 2003 − REVISED JANUARY 2005 D 100-Mbps to 660-Mbps Serial LVDS Data D D D Payload Bandwidth at 10-MHz to 66-MHz System Clock Pin-Compatible Superset of NSM DS92LV1023/DS92LV1224

Contextual Info: SN65LV1023A/SN65LV1224A 10ĆMHz TO 66ĆMHz, 10:1 LVDS SERIALIZER/DESERIALIZER SLLS570D − JUNE 2003 − REVISED JANUARY 2005 D 100-Mbps to 660-Mbps Serial LVDS Data D D D Payload Bandwidth at 10-MHz to 66-MHz System Clock Pin-Compatible Superset of NSM DS92LV1023/DS92LV1224

Contextual Info: DS92LV1023 DS92LV1023 40-66 MHz 10 Bit Bus LVDS Serializer Literature Number: SNLS049C DS92LV1023 40-66 MHz 10 Bit Bus LVDS Serializer General Description Features The DS92LV1023 is a 400 to 660 Mb/s serializer for highspeed unidirectional serial data transmission over FR-4

RA30H0608M

Abstract: RA30H0608M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H0608M RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to

miqa-10m

Contextual Info: MODULATORS Plug-In & Coaxial I&Q 9 MHz to 1880 MHz MIQY MIQC ZFMIQ MIQA ZAMIQ high rejection of carrier and sideband FREQUENCY MHz CONVERSION LOSS (dB) RF(signal)/ LO(carrier) fU fL Min. Max. MIQA-10M MIQA-21M MIQA-70M MIQA-70ML 9 20 66 66 11 23 73 73 DC

lpc1769

Abstract: ARM LPC1769 instruction set LPC1768 bootloader lpc1768 gpio lpc1768fbd LPC236 LPC17XX LPC1766 NXP bootloader LPC1768 spi Crystal oscillator 12 MHz
Contextual Info: LPC1769/68/67/66/65/64/63 32-bit ARM Cortex-M3 microcontroller; up to 512 kB flash and 64 kB SRAM with Ethernet, USB 2.0 Host/Device/OTG, CAN Rev. 9 — 10 August 2012 Product data sheet 1. General description The LPC1769/68/67/66/65/64/63 are ARM Cortex-M3 based microcontrollers for

lpc1769

Abstract: lpc1768fbd100 LPC1769FBD100 lpc1769 gpio ARM Cortex A8 NXP LPC1768 arm cortex a9 LPC1768 mobile cpu cortex I2S bus specification
Contextual Info: LPC1769/68/67/66/65/64/63 32-bit ARM Cortex-M3 microcontroller; up to 512 kB flash and 64 kB SRAM with Ethernet, USB 2.0 Host/Device/OTG, CAN Rev. 6 — 25 August 2010 Product data sheet 1. General description The LPC1769/68/67/66/65/64/63 are ARM Cortex-M3 based microcontrollers for

2N6263

Abstract: 2N6264
Contextual Info: SavantIC Semiconductor Product Specification 2N6263 2N6264 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·A wide variety of medium-to-high power, high-voltage applications

2N6316

Abstract: 2N6315
Contextual Info: SavantIC Semiconductor Product Specification 2N6315 2N6316 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6317/6318 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications

2N6260

Contextual Info: Inchange Semiconductor Product Specification 2N6260 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low saturation voltage ・Wide safe operating area APPLICATIONS ・Power switching circuits ・High-fidelity amplifers ・Solenoid drivers

Contextual Info: Coaxial I&Q Demodulator 50Ω ZFMIQ-70D 66 to 73 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C LO/RF Power 50mW I&Q Current 40mA Features • rugged, shielded case • excellent 3rd and 5th order harmonic suppression

2N6495

Contextual Info: SavantIC Semiconductor Product Specification 2N6495 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for switching and wideband amplifier applications

Contextual Info: Plug-In I&Q Demodulator 50Ω MIQA-70D 66 to 73 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C LO/RF Power 50mW I&Q Current 40mA • hermetically sealed metal case • excellent 3rd and 5th order harmonic suppression

2N5050

Abstract: 2N5051 2N5052 2N4910 2N4911 2N4912
Contextual Info: Inchange Semiconductor Product Specification 2N5050 2N5051 2N5052 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High breakdown voltage ・Excellent safe operating area APPLICATIONS ・Designed for driver circuits,switching and amplifier applications

4851N

Abstract: NTMFS4851NT1G NTMFS4851NT3G
Contextual Info: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package

Contextual Info: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE

2N6078

Abstract: 2N6079 2N6077
Contextual Info: SavantIC Semiconductor Product Specification 2N6077 2N6078 2N6079 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For horizontal deflection output stages of TV’s and CRT’s

APA600-PQ208M

Abstract: FBGA-484 datasheet APA075 APA1000 APA150 APA300 APA450 APA750 APA150-TQ100 RPE 113
Contextual Info: v5.8 ProASICPLUS ® Flash Family FPGAs Features and Benefits High Performance Routing Hierarchy • • • • High Capacity Commercial and Industrial • • • I/O 75,000 to 1 Million System Gates 27 k to 198 kbits of Two-Port SRAM 66 to 712 User I/Os

2N3441

Contextual Info: Inchange Semiconductor Product Specification 2N3441 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=3A ·Power dissipation -PD=25W @TC=25℃ APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as:

K4H511638G

Abstract: K4H510438G K4H510838G-LC K4H510838G K4H511638G-LC/LCC
Contextual Info: K4H510438G K4H510838G K4H511638G DDR SDRAM 512Mb G-die DDR SDRAM Specification 66 TSOP-II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

tas 5352

Abstract: 64KX32 CY7C1333
Contextual Info: CY7C1333 64Kx32 Flow-Thru SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ device MT55L64L32F • Supports 66-MHz bus operations with zero wait states — Data is transferred on every clock

D 1666

Abstract: NSFJ340
Contextual Info: Technical Data NSFJ340 POWER MOSFET N CHANNEL 10 AMPERE 400 VOLTS 0.55 Ω • REPETITIVE AVALANCHE RATINGS • LOW RDS ON • LOW DRIVE REQUIREMENT • DYNAMIC TO-66 dv/dt RATING ABSOLUTE MAXIMUM RATINGS (TC = 250C unless otherwise noted) Parameters / Test Conditions

49LF016C

Abstract: SST49LF016C
Contextual Info: 16 Mbit LPC Serial Flash SST49LF016C 016C16Mb LPC Firmware Flash Data Sheet FEATURES: • Operational Clock Frequency – 33 MHz – 66 MHz • Organized as 2M x8 • Conforms to LPC Interface Specification v1.1 – Support Multi-Byte Firmware Memory Read/

MIQA-70D

Contextual Info: Plug-In I&Q Demodulator 50Ω MIQA-70D 66 to 73 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C LO/RF Power 50mW I&Q Current 40mA Pin Connections LO carrier RF (signal) I (0°)(ref.) Q (90°)* 50Ω TERM EXT.