TO-3PF PACKAGE Search Results

TO-3PF package

Contextual Info: TO-3PF Package Dimensions TO-3PF FS PKG CODE AG 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 2.00 ±0.20 2.00 ±0.20 22.00 ±0.20 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 0.85 ±0.03 23.00 ±0.20 10 ° 10.00 ±0.20 (1.50) 2.00 ±0.20 14.50 ±0.20 16.50 ±0.20

A710

Contextual Info: 2-1 Power Transistors 2-1-3 Transistors for Display Deflection Output Part No. 2SC5002 VCBO VCEO IC Pc V (V) (A) (W) 1500 2SC5124 800 7 80 10 100 Package TO-3PF Fig. No. 1 External Dimensions • No. 1 (TO-3PF) 5.5±0.2 3.45±0.2 ±0.2 5.5 φ 3.3±0.2 3.0

Contextual Info: Ordering number : ENA2218 NDUL03N150C N-Channel Power MOSFET http://onsemi.com 1500V, 2.5A, 10.5Ω, TO-3PF-3L Features • • • ON-resistance RDS on =8Ω (typ.) Input capacitance Ciss=650pF (typ.) 10V drive TO-3PF-3L Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: 600 V, 18 A, IGBT FGM633 Features Package  Low Saturation Voltage  High Speed Switching  RoHS Compliant TO-3PF-3L  VCE - 600 V  IC-18 A TC = 100 °C

BU2508AF

Abstract: transistor bu2508af bu2508af equivalent
Contextual Info: NPN BU2508AF NPN SILICON POWER TRANSISTORS The BU2508AF is silicon power transistor mounted in Jedec TO-3PF plastic package. They are designed for use in horizontal deflection circuits of color TV receivers. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol

BU2508AF

Abstract: bu2508af equivalent TRANSISTOR BU2508AF
Contextual Info: NPN BU2508AF NPN SILICON POWER TRANSISTORS The BU2508AF is silicon power transistor mounted in Jedec TO-3PF plastic package. They are designed for use in horizontal deflection circuits of color TV receivers. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol

Contextual Info: SMD Type Product specification 2SC3515 Features High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE sat = 0.5V (max) Small Collector Output Capacitance: Cob = 3pF(typ.) PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SA1384

Contextual Info: STTH60AC06C Turbo 2 ultrafast high voltage rectifier Datasheet  production data Features • Ultrafast switching A1  Low reverse recovery current K  Reduces switching and conduction losses A2  Low thermal resistance  Insulated package TO-3PF:

Contextual Info: STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes TAB VDS RDS on max PTOT ID 1 3 STF1N105K3 STFW1N105K3 1050 V 1 11 Ω

smd transistor marking br

Abstract: transistor smd marking smd symbols transistors smd transistor 2SC3515 2SA1384 2SC3515
Contextual Info: Transistors SMD Type High Voltage Control Applications 2SC3515 Features High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE sat = 0.5V (max) Small Collector Output Capacitance: Cob = 3pF(typ.) PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package

Contextual Info: STFW3N150, STH3N150-2, STP3N150, STW3N150 N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages Datasheet - production data Features TAB Order codes 1 VDS RDS on max. ID PTOT 2 3 1 3 STFW3N150 63 W 2

SP724AHTG

Abstract: marking 724G package marking 724g 724G TVS SP724 ITS 724G 724G battery charging with scr and circuit vx sot23-6 IC121
Contextual Info: TVS Diode Arrays SPA Family of Products General Purpose ESD Protection - SP724 Series SP724 Series 3pF 8kV Rail Clamp Array RoHS Pb GREEN Description The SP724 is comprised of bipolar SCR/diode structures to protect up to four independent lines by clamping

Contextual Info: FFAF10U20DN FFAF10U20DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F TO-3PF 1 2 3 1. Anode 2.Cathode 3. Anode

Contextual Info: Ordering number : ENA2202 NGTG20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE sat ;1.45V Single TO-3PF-3L Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Enhansment type • Adaption of full isolation type package

BU508AF

Contextual Info: BU508AF BU508AF TV Horizontal Output Applications TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter Value 1500 Units

Contextual Info: BU508AF BU508AF TV Horizontal Output Applications TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 1500

TIP147F

Abstract: TIP146F TIP145F
Contextual Info: TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140F/141F/142F TO-3PF 1 1.Base PNP Epitaxial Darlington Transistor

Contextual Info: STF38N65M5, STFW38N65M5 N-channel 650 V, 0.073 Ω typ., 30 A MDmesh V Power MOSFETs in TO-220FP and TO-3PF packages Datasheet - production data Features Order codes VDS@ TJmax RDS on max ID 710 V 0.095 Ω 30 A STF38N65M5 STFW38N65M5 1 • Higher VDSS rating and high dv/dt capability

Contextual Info: KSD5707 KSD5707 High Voltage Color Display Horizontal Deflection Output No Damper Diode • High Collector - Base Voltage : VCBO = 1500V • High Speed Switching tF = 0.4µs (Max.) TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor

rogers* RO4003C

Abstract: RO4003C Rogers RO4003C ADF5000 MO-220-WEED-6 Ro4003c to FR4 rogers laminate materials ADP150 Rogers RO4003 Rogers RO4003* characteristic impedance
Contextual Info: 4 GHz to 18 GHz Divide-by-2 Prescaler ADF5000 FEATURES APPLICATIONS PLL frequency range extender Point-to-point radios VSAT radios Communications test equipment FUNCTIONAL BLOCK DIAGRAM CE ADF5000 BIAS VDDx 100Ω 3pF RFIN 100Ω 1pF RFOUT DIVIDE BY 2 RFOUT

J4310F-Y

Abstract: J4310F J4310 J4310F-O
Contextual Info: FJAF4310 FJAF4310 Audio Power Amplifier • • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJAF4210 TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: TIP140F/141F/142F TIP140F/141F/142F Monolithic Construction With Built In BaseEmitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use TO-3PF 1 1.Base NPN Epitaxial Darlington Transistor

TIP147F

Abstract: TIP146F TIP145F
Contextual Info: TIP145F/146F/147F TIP145F/146F/147F Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A Min. • Industrial Use • Complement to TIP140F/141F/142F TO-3PF 1 1.Base PNP Epitaxial Darlington Transistor

transistor marking 020

Abstract: KSC5030F KSC5030FRTU
Contextual Info: High Voltage Fast Switching Transistor Features • Fast Speed Switching • Wide Safe Operating Area TO-3PF 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage