TO-251 OUTLINE Search Results

Contextual Info: - 7 ^ / ' c 2 3 D 251 NR 53E D EUPEC • 3m]32i7 aaocnio to? ■ upec D 251 NR Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Periodische Vrrm Spitzensperrspannung Effektiver Ifrmsm Durchlaßstrom Dauergrenzstrom •favm Maximum permissible values

QS32383

Abstract: QS3383
Contextual Info: QSFCT151T, 251T, 2151T, 2251T QS54/74FCT151T QS3383 QS54/74FCT251T QS32383 QS54/74FCT2151T QS54/74FCT2251T High Speed CMOS High Speed CMOS 8 Input Bus Exchange Multiplexers Switches Q FEATURES/BENEFITS • Pin and function compatible to the 74F151/251 74FCT151/251 and 74FCT151T/251T

Contextual Info: QSFCT151T, 251T, 2151T, 2251T QS54/74FCT151T QS54/74FCT251T High Speed CMOS 8 Input Multiplexers Q QS54/74FCT2151T QS54/74FCT2251T FEATURES/BENEFITS • Pin and function compatible to the 74F151 /251 74FCT151/251 and 74FCT151T/251T • CMOS power levels: <7.5 mW static

004II

Contextual Info: H D 74 AC 251/H D 74 ACT 251*I:S S£T" Description Pin Assignment The HD74AC251/HD74ACT251 is a high-speed 8input digital multiplexer. It provides, in one pack­ age, the ability to select one bit o f data from up to eight sources. It can be used as universal function

Contextual Info: Power Packages TO-251 2 LEAD JEDEC STYLE TO-251 PLASTIC PACKAGE FOR RECTIFIERS ONLY E b2 H1 INCHES A A1 TERM. 1 SEATING PLANE D b1 L1 L 1 MAX MIN MAX A 0.086 0.094 2.19 2.38 - A1 0.018 0.023 0.46 0.58 3, 4 J1 NOTES 3, 4 b 0.028 0.033 0.72 0.84 b1 0.033 0.045

LLV1005FB10NJ

Abstract: RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 RMPA5251-251 grm39
Contextual Info: RMPA5251-251 Raytheon RF Components 4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics1 The RMPA5251-251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with

TO-251 Outline

Contextual Info: TO-251 OUTLINE lleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties, which may result from its use. No license is granted

Contextual Info: TO-251 MP-3 Outline UNIT: mm 2.3±0.2 0.5±0.1 1.1±0.2 7.0 MIN. 13.7 MIN. 5.5±0.2 1.6±0.2 5.0±0.2 1.5+0.2 - 0.1 6.5±0.2 0.5+0.2 - 0.1 2.3 TYP. 0.75 TYP. 2.3 TYP. 0.5+0.2 - 0.1

C5201 transistor

Abstract: c5201 Transistor C5201 BTC5201I3
Contextual Info: Spec. No. : C653I3 Issued Date : 2003.11.25 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTC5201I3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics Symbol Outline TO-251

IXTU1N80P

Abstract: T1N80 1N80P
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) S Test Conditions VDSS TJ = 25°C to 150°C

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-4SL-251 P RELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=36.0dBm at 5.9GHz to 6.75GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=8.0dB at 5.9GHz to 6.75GHz

TIM5964-35SLA-251

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-35SLA-251 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION „ HIGH EFFICIENCY ηadd=39% at 5.9 to 6.75GHz IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level „ HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.75GHz

1N80P

Abstract: T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) D S Symbol Test Conditions VDSS TJ = 25°C to 150°C

Contextual Info: PolarTM Power MOSFET VDSS = 500V = 5A ID25 RDS on ≤ 1.4Ω Ω IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P N-Channel Enhancement Mode Avalanche Rated TO-251 (IXTU) G S D (Tab) TO-252 (IXTY) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

MJP122

Abstract: TO-251 Outline TIP122
Contextual Info: MJP122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER Features: TO-251 * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Value

Contextual Info: MJP122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER Features: * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C TO-251 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Value

D882

Abstract: transistor D882 datasheet IC 6650 D882 TRANSISTOR br d882 J D882 transistor D882 h D882 datasheet d882 TRANSISTOR br D882
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors D882 TRANSISTOR（NPN） TO—251 FEATURES 1.BASE Power dissipation PCM : 1.25W（Tamb=25℃） Collector current ICM: 3A Collector-base voltage V BR CBO : 40V Operating and storage junction temperature range

TO-251 Outline

Abstract: MJ 4033
Contextual Info: RURD840, RURD850, RURD860, RURD840S, RURD850S, RURD860S HARRIS S E M I C O N D U C T O R 8A, 400V - 600V Ultrafast Diodes August 1995 Features Packages • Ultrafast with Soft R ecovery. <60ns JEDEC STYLE TO-251

Contextual Info: VDSS ID25 IXTU05N100 IXTY05N100 High Voltage Power MOSFET = = ≤ RDS on 1000V 750mA Ω 17Ω N-Channel Enhancement Mode Avalanche Rated TO-251 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTU12N06T IXTY12N06T = 60V = 12A Ω ≤ 85mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-251 (IXTU) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: High Voltage Power MOSFET IXTU05N100 IXTY05N100 VDSS ID25 = =  RDS on 1000V 750mA  17 N-Channel Enhancement Mode Avalanche Rated TO-251 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M

TO247AC

Abstract: TO-247AC
Contextual Info: Contents Page Standard Recovery Diodes Axial Lead Type SOD-123 SMA Narrow SMC TO-220AC 2 3 3 3 3 Fast Recovery Diodes Axial Lead Type SOD-123 SMA Narrow SMC TO-251 TO-252 TO-220AC TO-220AB TO-220AC Full Pack TO-220AB Full Pack TO-262 TO-262 2 Leads TO-263AB

IXTY12N06T

Abstract: IXTU12N06T 12n06 12N06T
Contextual Info: Preliminary Technical Information IXTU12N06T IXTY12N06T TrenchMVTM Power MOSFET VDSS ID25 = 60V = 12A Ω ≤ 85mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-251 (IXTU) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ

IXTY05N100

Abstract: IXTU05N10 IXTU 1000V IXTU05N
Contextual Info: High Voltage Power MOSFET IXTU05N100 IXTY05N100 VDSS ID25 = = ≤ RDS on 1000V 750mA Ω 17Ω N-Channel Enhancement Mode Avalanche Rated TO-251 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000