TO-251 OUTLINE Search Results
TO-251 OUTLINE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MKZ36V |
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Zener Diode, 36 V, SOT-23 | Datasheet | ||
MUZ6V2 |
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Zener Diode, 6.2 V, SOT-323 | Datasheet | ||
CEZ24V |
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Zener Diode, 24 V, SOD-523 | Datasheet | ||
MKZ30V |
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Zener Diode, 30 V, SOT-23 | Datasheet | ||
MSZ36V |
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Zener Diode, 36 V, SOT-346 | Datasheet |
TO-251 OUTLINE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: - 7 ^ / ' c 2 3 D 251 NR 53E D EUPEC • 3m]32i7 aaocnio to? ■ upec D 251 NR Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Periodische Vrrm Spitzensperrspannung Effektiver Ifrmsm Durchlaßstrom Dauergrenzstrom •favm Maximum permissible values |
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D448N. T-91-20 D1509N. | |
QS32383
Abstract: QS3383
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QSFCT151T, 2151T, 2251T QS54/74FCT151T QS3383 QS54/74FCT251T QS32383 QS54/74FCT2151T QS54/74FCT2251T 74F151/251 QS32383 QS3383 | |
Contextual Info: QSFCT151T, 251T, 2151T, 2251T QS54/74FCT151T QS54/74FCT251T High Speed CMOS 8 Input Multiplexers Q QS54/74FCT2151T QS54/74FCT2251T FEATURES/BENEFITS • Pin and function compatible to the 74F151 /251 74FCT151/251 and 74FCT151T/251T • CMOS power levels: <7.5 mW static |
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QSFCT151T, 2151T, 2251T QS54/74FCT151T QS54/74FCT251T QS54/74FCT2151T QS54/74FCT2251T 74F151 74FCT151/251 74FCT151T/251T | |
004IIContextual Info: H D 74 AC 251/H D 74 ACT 251*I:S S£T" Description Pin Assignment The HD74AC251/HD74ACT251 is a high-speed 8input digital multiplexer. It provides, in one pack age, the ability to select one bit o f data from up to eight sources. It can be used as universal function |
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251/H HD74AC251/HD74ACT251 HD74ACT251 74ACT: T-90-20 004II | |
Contextual Info: Power Packages TO-251 2 LEAD JEDEC STYLE TO-251 PLASTIC PACKAGE FOR RECTIFIERS ONLY E b2 H1 INCHES A MIN MAX MIN MAX TERM. 1 A 0.086 0.094 2.19 2.38 - SEATING PLANE A1 0.018 0.022 0.46 0.55 3, 4 A1 D b1 L1 L c b 1 MILLIMETERS SYMBOL b 0.028 0.032 0.72 0.81 |
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O-251 O-251 | |
Contextual Info: Power Packages TO-251 2 LEAD JEDEC STYLE TO-251 PLASTIC PACKAGE FOR RECTIFIERS ONLY E b2 H1 INCHES A A1 TERM. 1 SEATING PLANE D b1 L1 L 1 MAX MIN MAX A 0.086 0.094 2.19 2.38 - A1 0.018 0.023 0.46 0.58 3, 4 J1 NOTES 3, 4 b 0.028 0.033 0.72 0.84 b1 0.033 0.045 |
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O-251 O-251 | |
LLV1005FB10NJ
Abstract: RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 RMPA5251-251 grm39
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RMPA5251-251 RMPA5251-251 LLV1005FB10NJ RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 grm39 | |
084DLContextual Info: TO-251 2 LEAD JEDEC STYLE TO-251 PLASTIC PACKAGE FOR RECTIFIERS ONLY E b2 H1 INCHES A A1 TERM. 1 SEATING PLANE D b1 L1 L 1 MIN MAX MIN MAX 2 J1 e1 NOTES A 0.086 0.094 2.19 2.38 - A1 0.018 0.022 0.46 0.55 3, 4 b 0.028 0.032 0.72 0.81 3, 4 b1 0.033 0.040 0.84 |
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O-251 O-251 084DL | |
TO-251 OutlineContextual Info: TO-251 OUTLINE lleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties, which may result from its use. No license is granted |
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O-251 TO-251 Outline | |
Contextual Info: TO-251 MP-3 Outline UNIT: mm 2.3±0.2 0.5±0.1 1.1±0.2 7.0 MIN. 13.7 MIN. 5.5±0.2 1.6±0.2 5.0±0.2 1.5+0.2 - 0.1 6.5±0.2 0.5+0.2 - 0.1 2.3 TYP. 0.75 TYP. 2.3 TYP. 0.5+0.2 - 0.1 |
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O-251 | |
C5201 transistor
Abstract: c5201 Transistor C5201 BTC5201I3
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C653I3 BTC5201I3 O-251 UL94V-0 C5201 transistor c5201 Transistor C5201 BTC5201I3 | |
Contextual Info: STN442D N Channel Enhancement Mode MOSFET 27.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE |
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STN442D STN442D O-252 O-251 0V/20 O-252 O-251 | |
N mosfet 100v 200AContextual Info: ST36N10D N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION STN36N10D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) TO-252 TO-251 |
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ST36N10D STN36N10D O-252 O-251 00V/20 O-252 O-251 ST36N10D N mosfet 100v 200A | |
IXTU1N80P
Abstract: T1N80 1N80P
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O-263 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P O-251 O-220 IXTU1N80P T1N80 1N80P | |
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TIM5964-35SLA-251Contextual Info: MICROWAVE POWER GaAs FET TIM5964-35SLA-251 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION HIGH EFFICIENCY ηadd=39% at 5.9 to 6.75GHz IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.75GHz |
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TIM5964-35SLA-251 75GHz 325GHz TIM5964-35SLA-251 | |
1N80P
Abstract: T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P
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IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P O-263 O-251 O-220 1N80P T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P | |
Contextual Info: Outline drawings Dimensions in mm and inches 1 mm = 0.0394" 1 TO-251 AA TO-252 AA (D PAK) TO-220 AB TO-220 AC Vf". J J ] r •» r ^ T f ' ' | j1 -■ 1 - IV ■ ' " 1. 2. 3. 4. Gate Dram Source Drain Sack heatsink Millimeter din. Max. 2.19 0.89 2.38 1.14 |
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O-251 O-252 O-220 | |
Contextual Info: PolarTM Power MOSFET VDSS = 500V = 5A ID25 RDS on ≤ 1.4Ω Ω IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P N-Channel Enhancement Mode Avalanche Rated TO-251 (IXTU) G S D (Tab) TO-252 (IXTY) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C |
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IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P O-251 O-252 O-220 O-251 | |
IXTA5N50P
Abstract: IXTP5N50P IXTU5N50P
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IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P O-251 O-252 O-263 O-220AB O-251 O-220 IXTP5N50P | |
Contextual Info: HAFRFRIS S E M I C O N D U C T O R RURD640, RURD650, RURD660 RURD640S, RURD650S, RURD660S 6A, 400V - 600V Ultrafast Diodes January 1995 Package Features JEDEC STYLE TO-251 • Ultrafast with Soft Recovery. <55ns |
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RURD640, RURD650, RURD660 RURD640S, RURD650S, RURD660S O-251 O-252 | |
MJP122
Abstract: TO-251 Outline TIP122
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MJP122 O-251 TIP122 13-Apr-07 O-251 MJP122 TO-251 Outline TIP122 | |
Contextual Info: MJP122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER Features: * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C TO-251 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Value |
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MJP122 TIP122 O-251 13-Apr-07 O-251 | |
D882
Abstract: transistor D882 datasheet IC 6650 D882 TRANSISTOR br d882 J D882 transistor D882 h D882 datasheet d882 TRANSISTOR br D882
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O-251 O--251 25WTamb Co200 091TYP 300TYP D882 transistor D882 datasheet IC 6650 D882 TRANSISTOR br d882 J D882 transistor D882 h D882 datasheet d882 TRANSISTOR br D882 | |
TO-251 Outline
Abstract: MJ 4033
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RURD840, RURD850, RURD860, RURD840S, RURD850S, RURD860S O-251 O-252 TO-251 Outline MJ 4033 |