TO 92 CASE N10 Search Results

25N100A

Abstract: .25N100 25N100 N100
Contextual Info: Low VCE sat High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90

Contextual Info: g ixYs VDSS ! RDS on 1000 V 10 A 1.20 n 1000 V 12 A 1.05 Û IXTH/IXTM10 N100 IXTH/IXTM12 N100 MegaMOS FET 1D25 N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions v’ DSS ^ v 0GR Td = 25°C to 150“C; RGS = 1 Mi2 = 25°C to 150°C 1000 V

BX1750A

Abstract: BX1750A-3D BX1750 MIL-STD-1750 CMGA17-P113 surom 5962-8951901MXC CMGA5-P113 mil-std-1750a 5962-8951903mxc
Contextual Info: REVISIONS LTR DATE DESC R IPTIO N REV SH EE T REV SH EE T A PPROVED YR-M O -DA Technical changes to 1.2.2 and 1.4. Technical changes in table I. Adjustment to figure 4. Editorial changes throughout. 90-08-15 William K. Heckman Add device types 02, 03, 92, and 93. Update boilerplate to full OPOPN SMD.

C289

Abstract: IXTM5N100A
Contextual Info: Standard Power MOSFET ix t h / ix t m s n io o IXTH/IXTM 5 N100A VD S S ^ D25 1000 V 1000 V 5A 5A D D S o n 2.4 £1 2.0 Q N-Channel Enhancement Mode Symbol Maximum Ratings Test Conditions V v oss T j = 25°C to 150“C 1000 V VDGR T j = 25°C to 150°C; RGS = 1 M il

2N100

Abstract: C285 IXTP2N100A
Contextual Info: ItilXYS IXTA/fXTP 2 N100 IXTA/IXTP 2 N100A VDSS ^D25 1000 V 1000 V 2A 2A p DS on 7.0 Û 6.0 ß N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 1000 V V Tj = 25°C to 150°C; RGS= 1 M fi 1000 V Vos VGSM Continuous

15N100

Contextual Info: VDSS HiPerFET Power MOSFETs p ^D25 DS on 1000 V 14 A 0.75 Ü 1000V 15 A 0.7 Q trr < 200 ns ix f h / i x f x i 4 n io o IXFH/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data Symbol Test Conditions Maximum Ratings

LM136

Abstract: LM136Z LT1009 LT1009CZ NCV1009 NCV1009D NCV1009Z DIODE smd marking N7
Contextual Info: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and

Contextual Info: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and

Zener diode smd marking N1

Abstract: 1009Z 1009D Diode smd marking N4
Contextual Info: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and

zener n7

Abstract: DIODE smd marking N7 LM136 LM136Z LT1009 LT1009CZ NCV1009 NCV1009D NCV1009Z
Contextual Info: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on−chip trimming which minimizes voltage tolerance and

Contextual Info: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on−chip trimming which minimizes voltage tolerance and

CS1009

Abstract: CS1009GD8 CS1009GDR8 CS1009GZ3 LM136 LM136Z LT1009 LT1009CZ
Contextual Info: CS1009 2.5 Volt Reference The CS1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and temperature

samsung R540 service

Abstract: Samsung R418 Preface Notebook Computer socket 479 schematic diagram computer voltage CPU hard drive CD Drive Insyde bios manual W83L517 samsung lcd tv power supply schematic schematic diagram crt tv samsung Z0301
Contextual Info: Preface Notebook Computer M350C/M360C Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

CS1009GZ3

Abstract: CS1009 CS1009GD8 CS1009GDR8 LM136 LM136Z LT1009 LT1009CZ Zener diode smd marking N1
Contextual Info: CS1009 2.5 Volt Reference The CS1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and temperature

Contextual Info: OIXYS V CES Low VCE ,i(| IGBT High Speed IGBT IXGH 12 N100 IXGH 12 N100A e _ Symbol Test Conditions VCES Tj = $ Maximum Ratings 25°C to 150°C 1000 v CGR Tj = 25°C to 150°C; RGE = 1 MQ 1000 V Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 24 A

DIODE B44 sot

Abstract: IXTK21 B44 diode IXTN21N100
Contextual Info: IXTK21 N100 IXTN21N100 High Voltage MegaMOS FETs DSS D25 RDS on = 1000 V = 21 A = 0.55 Q N-Channel, Enhancement Mode TO-264 AA (IXTK) Maximum Ratings IXTN IXTK Symbol Test Conditions VDSS T, = 25°C to 150°C Tj = 25°C to 150°C; Ras = 1 MO V«, Vas V

Wakefield Thermal Solutions TYPE 120

Abstract: intel packaging handbook 240800 Diode Mark N10 f 6061 A80960JD-33 A80960JD-40 A80960JD-50 A80960JD-66 A80960JT-100 A80960JT-75
Contextual Info: 80960JA/JF/JD/JT 3.3 V Microprocessor 1.0 Packaging Information: 80960Jx 3.3 V Processors The 80960Jx is offered with four speeds and three package types. The 132-pin Pin Grid Array PGA device is specified for operation at VCC = 3.3 V ± 0.15 V over a case temperature range of

A80960JD-33

Abstract: A80960JD-40 A80960JD-50 A80960JD-66 A80960JT-100 A80960JT-75 NG80960JT-100 NG80960JT-75
Contextual Info: 80960Jx 3.3 V Microprocessor 1.0 Packaging Information: 80960Jx 3.3 V Processors The 80960Jx is offered with four speeds and three package types. The 132-pin Pin Grid Array PGA device is specified for operation at VCC = 3.3 V ± 0.15 V over a case temperature range of

samsung R540 service

Abstract: 37 TV samsung lcd Schematic circuit diagram W83L517 Preface Notebook Computer ALC201 samsung lcd tv power supply schematic "Smoke Sensor MQ2 Insyde bios manual z1021 37 TV samsung lcd Schematic
Contextual Info: Preface Notebook Computer M350C/M360C/M361C/M362C Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

DIODE smd marking N7

Abstract: CS1009 CS1009GD8 CS1009GDR8 CS1009GZ3 LM136 LM136Z LT1009 LT1009CZ
Contextual Info: CS1009 2.5 Volt Reference The CS1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and temperature

cat c15 ecm

Abstract: 1Kx32 asus f3 ARRAY MICROSYSTEMS asus n10 a66210 D110 d4oc1 asus n5
Contextual Info: a66311 RECONFIGURABLE a r r a y S T O R E R a S ADVANCE DATA SHEET- REVISION 1.1, MAR, 1992 GENERAL DESCRIPTION: FEATURES: The Reconfigurable array Store (RaS) is an application specific memory chip for the a66xxx family of array pro­ cessing devices. The RaS can be used to implement data

Solutions960

Contextual Info: 80960JA/JF/JD/JS/JC/JT 3.3 V Embedded 32-Bit Microprocessor Datasheet Product Features • ■ ■ ■ ■ Code Compatible with all 80960Jx Processors High-Performance Embedded Architecture — One Instruction/Clock Execution — Core Clock Rate is: 1x the Bus Clock for 80960JA/JF/JS

b3 JF

Abstract: MARK AD9 80960JA 80960JD 80960JT 273109
Contextual Info: 80960JA/JF/JD/JS/JC/JT 3.3 V Embedded 32-Bit Microprocessor Datasheet Product Features • ■ ■ ■ ■ Code Compatible with all 80960Jx Processors High-Performance Embedded Architecture — One Instruction/Clock Execution — Core Clock Rate is: 1x the Bus Clock for 80960JA/JF/JS

NG80960JC-40

Contextual Info: 80960JA/JF/JD/JS/JC/JT 3.3 V Embedded 32-Bit Microprocessor Datasheet Product Features • ■ ■ ■ ■ Code Compatible with all 80960Jx Processors High-Performance Embedded Architecture — One Instruction/Clock Execution — Core Clock Rate is: 1x the Bus Clock for 80960JA/JF/JS