TN2504 Search Results

TN25L

Contextual Info: ^ Supertex me. T N 25 L Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B Vdss / ^DS O N ^G S fth ) • d (ON) b v dgs (max) (max) (min) 20V 1.0Q 1.6V 4.0 A 40V 1.0CÌ 1.6V 4.0A Order Number / Package TO-243AA* — TN2504N8

Contextual Info: ^ TN2502 Supertex ine. TN2504 Low T hresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ ^D S O N ^ G S (th | I d (ON) b v dgs (max) (max) (min) TO-243AA* DICEt 20V 1.0Q 1.6V 4.0A — TN2502ND 40V 1.0Q

TN2504

Contextual Info: TN2504 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2504 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

fet sot-89 marking code

Abstract: FET SOT-89 N-Channel tn5l fet sot-89 product marking MARKING CODE BV sot-89 TN2504
Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

p-channel DMOS

Abstract: P024 TN2502ND TN2504 TN2504ND TP2502N8
Contextual Info: TN2502/TN2504 TN2502 TN2504 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* DICE† 20V 1.0Ω 1.6V 4.0A — TN2502ND 40V 1.0Ω 1.6V 4.0A

Contextual Info: TN2504 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON VGS(th) ' d (ON) BVoos (max) (max) (min) TO-243AA* Diet 40V i.o n 1.6V 4.0A TN2504N8 TN2504ND 'S a m e as SOT-89. Product supplied on 2000 piece ca rrier tape reels.

TN2504

Abstract: SOT89 FET marking TN5LW
Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN2504 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet 40V 1.0& 1.6V 4.0A TN2504N8 TN2504ND *S am e as SO T-89. P roduct supplied on 2000 piece ca rrie r tape reels.

Contextual Info: _ S ii ir m m m m tr iwitfuwi » zj r ^ 1i . r I . r »* TN2502 TN2504 Low Threshol , N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON ^GS(th) I d (ON) Order Number / Package BVdgs (max) (max) (min)

Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

45A SOT-89

Contextual Info: Supertex inc. TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.6V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance

TN2504

Abstract: TN2504N8 TN2504ND TO-243AA
Contextual Info: TN2504 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die† 40V 1.0Ω 1.6V 4.0A TN2504N8 TN2504ND *Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

TN2504

Contextual Info: Supertex inc. TN2504 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2504 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

tn5l

Abstract: TN2504 TN2504N8 TN2504ND
Contextual Info: TN2504 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die† 40V 1.0Ω 1.6V 4.0A TN2504N8 TN2504ND *Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

TN2504

Abstract: TN2504N8 TN2504ND
Contextual Info: TN2504 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die† 40V 1.0Ω 1.6V 4.0A TN2504N8 TN2504ND *Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

12v to 220 pwm sine wave inverter schematic circuit diagram

Contextual Info: HV461 Ring Generator Controller IC Features ► ► ► ► ► ► ► ► ► ► ► ► ► ► ► General Description 3.3V operation, logic inputs 3.3V & 5V compatible Digital control of ring frequency, amplitude, and offset Control via 8-bit bus or via individual inputs

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

TN2524

Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
Contextual Info: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178