TMT YA Search Results

Contextual Info: TMt »»OMU.TWM BCSOOOD W M WAS OUGMATU «V e t m w a w Tv o r o a jc o in o u s t » « , a n o c m f o a u o f f i u n m r c r a n t d t o t> « u n h i d s t a i b O M n i i w r , d a jo o m o u s t m i m uem a u . M T » rr, m o MUfTAftY, C C tO i. USL SNA UANUMCTUUNC AMO W f t

panametrics xmt 868

Abstract: honeywell stt25h prosonic RTT15 promag 50 STT25H panametrics promag 10 D699 STT17H
Contextual Info: IndustrialIT HART Device Type Managers for Freelance 800F and AC870P / Melody Data Sheet Revision : September 2010 The following Device Type Managers are interoperable with the beneath listed Freelance 800F and AC870P / Melody versions. Please see the M column for DTMs interoperable with AC870P / Melody and the F column for those interoperable with

krohne ifc 090

Abstract: Endress Hauser biffi actuator honeywell st3000 Yamatake honeywell honeywell CM42 xmt868 Yokogawa MAGNETROL vegason 62
Contextual Info: IndustrialIT FOUNDATION FIELDBUS Device Types for Freelance 800F Data Sheet Revision: July 2010 The following Device Types are interoperable with the Freelance 800F version 8.1 SP1, 8.2, 9.1 and 9.1RU1a. Freelance 800F Freelance 800F Freelance 8.1 SP1 FDT Base Container: 12.0.0.1

Variable Area Rotameter

Abstract: fmx siemens MASONEILAN VALVE ultrasonic flow meter rtt 10 foxboro foxboro FLOW METER turbine masoneilan MASONEILAN SVI ii Vortex flowmeter panametrics xmt 868
Contextual Info: IndustrialIT System 800xA Device Management HART Data Sheet Integrated HART Devices Revision: September 2010 Device Revision Manufacturer ID Device ID 1/5 22 135 4-Electrode Cond. 2wire, IS, Field 1 26 36 TB82PH pH 1 18 80 TB82PH-Combined pH/ORP 2-wire 1 26

BUK202-50Y

Abstract: buk20250y
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK202-50Y TOPFET high side DESCRIPTION Monolithic temperature and overload protected power switch based on M O SFET technology in a 5 pin plastic envelope, configured

Contextual Info: Philips Semiconductors Preliminary Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

S8818

Abstract: JS8818-AS
Contextual Info: Low Noise GaAs FET Chip Form JS8818-AS FEATURES: LOW NOISE FIGURE 1.4 d B a tf = 12 GHz 2.1 d B a tf = 18 GHz • HIGH ASSOCIATED GAIN 10 dB at f = 12 GHz 7.5 dB at f = 18 GHz 0.3 Mm GATE LENGTH CHIP FORM HIGH MAXIMUM AVAILABLE GAIN 11 dB at f = 12 GHz 9.0 dB a t f = 18 GHz

Contextual Info: C L 5 5 0 /C L 5 6 0 JPEG C o m p ressio n P ro c e s s o r U s e r’s M an u al % C-Cube M icro s y s te m s lTbHHb*! 0 0 0 0 6 2 2 • This document is preliminary. The specifications contained herein are derived from functional specifications and performance estimates, and

2N1714

Abstract: 2N1716 2N1717 2N17H 2N1715
Contextual Info: MlLr-S-195001263A t,L, 15 MAY 1963 SUPERSEDING M IL -S-19500/263 (E L ) <l< PfDUII AD «V r u u n v/ m vV ± 10At MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON, POWER TYPES 2N1714 THROUGH 2N1717 1. SCOPE 1.1 Scope. This specification covers th e detail requirem ents fo r silicon, N PN , tran sis•

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device

BUK9628

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

k 246 transistor fet

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

k 246 transistor fet

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope using ’trench’ technology. The device teatures very low on-state resistance

CL-200G-C

Abstract: CL-230LY-CD CL-220FG-C CL-220HR-C CL-220Y-C CL-190UB-X CL-190UR-CD l200dc CL-220PG CL-200yc
Contextual Info: SE* O' 3? :0:3T V H «RDM;RY03i<! Ti’ wNC [ t ; - / t 10 .Sri ffit.'i *S5-4f3iZiÌ5 i i ;K ; 5 4 .V * •H !, G a N * L E D * * * m v fc j» * * S f - '^ L E D 'C T 0 e. 1 ■ F v e tu rs a ir <mA) ImA) 78 m *00« typ« USO atom««*» 2. Ught omttted m Wue or groan.

ic 817

Abstract: tc9180n tc9173p tc9174 TC9302F toshiba TC 9174p TC9174P ic 807 TC9173 TC9302AF
Contextual Info: TOSHIBA-. ELECTRONIC 05 m m m m s ^ ^ r n m e s r n s s m s DËJ ', - D01flSb3 5 . • r-Hi-n-si DTS MICRO CONTROLLER CONTAINING LCD DRIVER Unit in mm The TC9302AF&#39;is 4 bit CMOS micro controller for digital tuning system use having built-in LCD driver. CPU has 4 bit parallel addition and

ECG861

Abstract: ecg jfet
Contextual Info: P H IL I P S E C G INC 17E ECG • ^53=120 000S03Ô 1 ■ 7 '- ^ / - / / ECG861 Quad Single Pole Analog Sw Sem iconductors Features • Analog signals are not loaded • Constant "O N " resistance for signals up to ±10 V and 100 kHz • Sm all signal analog signals to 50 MHz

diode Kl04

Contextual Info: P H I L IP S E C G INC 17 E ECG Sem iconductors 0 • ^ 53=123 000503 A 1 ■ 7 '- ^ / - / / ECG861 Quad Single Pole Analog Sw Features • Analog signals are not loaded • Constant "ON" resistance for signals up to ±10 V and 100 kHz • Small signal analog signals to 50 MHz

bg 22 transistor

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK203-50Y For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

51L33

Contextual Info: INTEGRATED TO SH IB A CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT DATA TC9309AF SILICON MONOLITHIC SINGLE CHIP DTS MICROCONTROLLER DTS-10 The TC9309AF is a 4bit CMOS microcontroller for single chip digital tuning system with built-in prescaler, PLL and

2SC1815

Abstract: 2SC945 C1815 NJM2252 SDIP22 TP10 tr c1815
Contextual Info: Z9 L“Ç g fü K z g jg ZZ I-.f-BffíYWO W O +A ON IZ oz 61 81 ¿I 91 SI H Zvr-SftíY W o ZIAS £-;.- s ffíY w a -i/— o 4 < c < WO •/w w w o ON II OI »••HSffíYWA £M S 6 8 L 9 S * Z J.-üffíYW A N iS/-< é 6 e - ;- » V Y * A (W A ) +A Iv H S f V Y W A

Contextual Info: SIEM EN S 2-Phase Stepper-Motor Driver TLE 4728 G Bipolar-IC Overview Features • 2 x 0.7 amp. full bridge outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Output stages are free of crossover current

PCM56P

Contextual Info: For Im m a n e Assistance, Conimi four Local Salesperson B U R R -B R O W N PCM56P PCM56U 1 [ DESIGNED FOR AUDIO Serial Input 16-Bit Monolithic DIG ITAL-TO-ANALOG CONVERTER FEATURES • SERIAL INPUT • -92dB MAX THD: FS Input, K Grade, 16 Bits • -74dB MAX THD: -20dB Input, K Grade,

diode PJ 41 MG

Abstract: ICX045BKA ICX045AK CCD Sony XC ICX045 Color Filter Array CFA
Contextual Info: ICX045BKA SONY« 1/3 inch CCD Image Sensor for PAL Color Camera P ack ag e O utline D e s c r ip t io n The ICX045BKA is an interline transfer CCD solid-state image sensor suitable for PAL 1/3 inch color video cameras. High sensitivity is achieved through the