00DB3 Search Results
00DB3 Price and Stock
Vishay Intertechnologies MMA02040D1000DB300Resistor: metal film; 100Ω; SMD; 400mW; ±0.5%; 200V; Ø1.4x3.6mm |
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MMA02040D1000DB300 | 3,000 |
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Vishay Intertechnologies MMA02040D3900DB300Resistor: metal film; 390Ω; SMD; 400mW; ±0.5%; 200V; Ø1.4x3.6mm |
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MMA02040D3900DB300 | 3,000 |
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MMA02040D3900DB300 | Tape & Reel | 15 Weeks | 3,000 |
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Vishay Intertechnologies SMM02040D3300DB300Resistor: metal film; 330Ω; SMD; 400mW; ±0.5%; 200V; Ø1.4x3.6mm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SMM02040D3300DB300 | 3,000 |
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Get Quote | |||||||
Vishay Intertechnologies MMA02040C1000DB300Resistor: metal film; 100Ω; SMD; 400mW; ±0.5%; 200V; Ø1.4x3.6mm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMA02040C1000DB300 | 3,000 |
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Get Quote | |||||||
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MMA02040C1000DB300 | Tape & Reel | 15 Weeks | 3,000 |
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Get Quote | |||||
Vishay Intertechnologies SMM02040D1000DB300- Tape and Reel (Alt: SMM02040D1000DB300) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SMM02040D1000DB300 | Tape & Reel | 12,000 | 18 Weeks | 3,000 |
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Buy Now | ||||
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SMM02040D1000DB300 | Tape & Reel | 15 Weeks | 3,000 |
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Get Quote | |||||
00DB3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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FMS1 T148
Abstract: FMS2 T148
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00db330fms1 t148fms2 t148 | |
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Contextual Info: SAMSUNG SEMICONDUCTOR INC G5 D e J| 7 T h m 4 S 00Db313 7 Dual AND-OR-lnvert Gates and Dual AND-OR Gates KS54HGTLS IZ 4 /[Z Q KS74HCTLS ° u u o FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with 54/74LS logic family • Low power consumption characteristic of CMOS |
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00db313ks54hgtlsks74hctls54/74ls+3 | |
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Contextual Info: cP February 1994 Edition 2.0 f - 'f I l f ' T ' f ' I I r U l l I b U D ATASH EE T: M B 9 8 A 9 0 8 2 X /9 0 9 2 x / 9 1 0 2 x / 9 1 1 2 x -2 0 LOW POWER SRAM MEMORY CARD LOW POWER STATIC RANDOM ACCESS MEMORY CARD 2 5 6 K / 5 1 2 K / 1 M / 2M-BYTE The Fujitsu MB98A9082x, 9092x, 9102x and 9112x are Static Random Access |
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mb98a9082x9092x9102x9112x+6 | |
ik02
Abstract: PC100F6 PD100F6 cf 595
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00a/600v/trr110nsecpc100f6pd100f6+4 | |
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Contextual Info: b4E ]> • 7Etm b E l Dü0b372 bôS « P R X C180 X500 Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 P h S S G C û t lt t O l S C R Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 |
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0b372bp107 | |
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Contextual Info: omRon SPECIAL PURPOSE D2D Basic Switch Special Purpose Basic Switch Minimum contact gap of 3 mm 0.12 in needed in general power switches is provided Fail-safe mechanism with double return spring and direct drive positive contact opening fea tures Conforms to Class II of VDE Insulation Grade |
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U/25/20/TN26/15/850/WP24S05/5000U
Abstract: WP48S05/5000U 48 VDC voltage regulator isolation diodes
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u/25/20/tn26/15/850/wp24s05/5000uwp48s05/5000u48 vdc voltage regulatorisolation diodes | |
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Contextual Info: @ LG Semicon. Co. LTD Description Features The GMM7321200ANS/SG is an 1M x 32 bits Dynamic RAM MODULE w hich is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7321200ANS/SG is |
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gmm7321200ans/sg16bitgmm7321200ansgmm7321200ansg+2 | |
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Contextual Info: HY514100A Series "H Y U N D A I 4M X 1-b it CMOS DRAM DESCRIPTION The HY514100A is the 2nd generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating |
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hy514100aschot03001ac06-30-may94d002u0q+2 | |
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Contextual Info: April 1997 MgLMicro Linear ML4880 Portable PC/PCMCIA Power Controller GENERAL DESCRIPTION FEATURES The ML4880 Portable PC and PCMCIA Power Controller is a complete solution for DC/DC power conversion for portable computing systems with single or multiple PCMCIA slots. |
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ml4880150mabor341fl000b34s | |
CHN 244
Abstract: CHN 237 chn 238 chn 926 20/CHN 244 50/CHN 846
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m-986-1r240-pinm-986-2r2m-9861r1+9 | |
MICROWAVE ASSOCIATES
Abstract: pa 3029 b Dielectric Resonator Oscillator DRO high power FET transistor s-parameters 2.5 GHz RF power transistors with s-parameters RF transistors with s-parameters 5218 chip ic TIP 298
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00l30ma4f0014701bma-4f001+12 | |
TRF 840
Abstract: GMM7321100BSG
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gmm7321100bs/sggmm7321100bsgmm7321100bsgqqqb34+1 | |
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Contextual Info: s e MIKRO n Fast Recovery Rectifier Diodes Ifrms maximum values for continuous operation 41 A V rsm V rrm Ifav (sin. 180; T e a s e = 85 °C) 26 A trr = 150 ns V $ SKR 2 F 17 SKR 3 F 20 $ $ 400 SKN 2F17/04 SKN 2F17/04UNF 600 SKN 2F17/06 SKN 2F17/06UNF 800 SKN 2F17/08 |
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2f17/042f17/04unf2f17/062f17/06unf+4 | |
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Contextual Info: » H Y U N D A I H Y 2 9 F 0 4 0 S e r i e s ” 1 W 11 11 * 1 1 512K X 8-bit CMOS 5.0 V-Only, Sector Erase Flash Memory PRELIMINARY DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512K x 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1 |
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hy29f0400g0b4071fa02-01-may95 | |
MN4364-15
Abstract: 105 m5e l71l lt 719 sfe 5,5 ma MN4364-20 HELI PD 20 S MN4364 a9tv
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d00b3emmn4364-20mn4364-1536-bit+11 | |
ICX045AK
Abstract: ICX045 Color Filter Array CFA
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icx045bkaicx045akicx045color filter array cfa | |
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Contextual Info: s e m ik r o n V rrm V br V rwm V V V Types Vf If = 30 A V N Rthjoil High Voltage Rectifiers 35.180 kV °c/w S K X A . 35 000 52 000 30 000 S K X A 35 N 120 32 12,5 80 000 100 000 80 000 100 000 75 000 75 000 S K X A 75 000 S K X A 75 M 160 210 54 61 |
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fe100a13bb7100db3 | |
B1307
Abstract: B-1307 35GM CY7B139-15JC TNR*G CY7B138 IS2535 B1306
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g00b37fccy7b138cy7b13968-pin+10 | |
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Contextual Info: SLOTTED OPTICAL SWITCH OP T O E L E C T R O N I C S QVA SERIES PACKAGE DIMENSIONS SEE NOTE 3 DESCRIPTION Th e QVA series of switches is designed to allow the user V I I m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN |
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qva11133qva11134qva11233ova11234+6 | |
E-1330
Abstract: CJ420 DJRQ EG74 J428 EG28 g52 battery J426 YALE STATUS CODES nais inverter
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nju6451anju6450a80-segment16-bit+12 | |
3844P
Abstract: D8101 FA13844 B33i pwm 8pin H04-0U4-07
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ms6n0360h04-0u4-07000fc3844p+7 | |
diode PJ 41 MG
Abstract: ICX045BKA ICX045AK CCD Sony XC ICX045 Color Filter Array CFA
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icx045bkaicx045ak00db3diode pj 41 mg+3 | |
sf transistor
Abstract: IMB5
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sc-59sf transistorimb5 | |