TMD1414 Search Results

TMD1414-2C

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1414-2C MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS Ta= 25°C

TOSHIBA MICROWAVE AMPLIFIER

Abstract: TMD1414-1G
Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1414-1G MICROWAVE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY ABSOLUTE MAXIMUM RATINGS Ta=25degC CHARACTERISTICS SYMBOL UNIT RATINGS DRAIN SUPPLY VOLTAGE VDD V 10 GATE SUPPLY VOLTAGE VGG V -10 INPUT POWER Pin dBm 20 POWER DISSIPATION

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER TMD1414-02 MICROWAVE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY FEATURES • Suitable for Ku-band VSAT ■ High Gain GldB=36dB TYP. ■ Broadband Operation f=13.75-14.5GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25‘C) SYMBOL UNIT

13.575

Abstract: TMD1414-1 TMD1414-1B TMD1414-1C 324 148-1
Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1414-1 TMD1414-1B TMD1414-1C MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n Suitable for Ku-band VSAT n High Gain G1dB=26dB TYP. n High Power P1dB=31.5dBm(TYP.) n Broadband Operation f=13.75 – 14.5GHz. n High Power Added Efficiency ηadd=29%(TYP.)

13.575

Abstract: TMD1414-02 TMD1414-02B TMD1414-02C 1036 - 0002 58785
Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1414-02 TMD1414-02B TMD1414-02C MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n Suitable for Ku-band VSAT n High Gain G1dB=36dB TYP. n Broadband Operation f=13.75 – 14.5GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25oC) CHARACTERISTICS

TMD1414-1G

Abstract: TOSHIBA MICROWAVE AMPLIFIER SET75 16-18pin 3130P TMD1414
Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1414-1G MICROWAVE SEMICONDUCTOR TECHNICAL DATA ABSOLUTE MAXIMUM RATINGS Ta=25°°C CHARACTERISTICS SYMBOL UNIT RATINGS DRAIN SUPPLY VOLTAGE VDD V 10 GATE SUPPLY VOLTAGE VGG V -10 INPUT POWER Pin dBm 20 POWER DISSIPATION

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER T O S H IB A TMD 1414-02 TMD1414-02B TMD1414-02C MICRO WA VE SEMICONDUCTOR TECHNICAL DATA Three different pin out configuration FEATURES • Suitable for Ku-band VSAT ■ High Gain GldB=36dB(TYP.) ■ Broadband Operation f=13.75-14.5GHz

TMD1414-2

Abstract: tmd1414-2c
Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1414-2 TMD1414-2B TMD1414-2C MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n Suitable for Ku-band VSAT n High Gain G1dB=26dB TYP. n High Power P1dB=34.5dBm(TYP.) n Broadband Operation f=13.75 – 14.5GHz. n High Power Added Efficiency ηadd=29%(TYP.)

TMD1414-2C

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1414-2C M I C R O W A V E SEMICONDUCTOR TECHNICAL DATA FEATURES n n Suitable for Ku-band VSAT HIGH POWER P1dB=34.0dBm TYP. n HIGH POWER ADDED EFFICIENCY ηadd=29% (TYP.) n HIGH GAIN G1dB=24.0dB (TYP.) n BROADBAND OPERATION

TMD1414-1L

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1414-1L MICROWAVE SEMICONDUCTOR TECHNICAL DATA ABSOLUTE MAXIMUM RATINGS Ta=25°°C CHARACTERISTICS SYMBOL UNIT RATINGS DRAIN SUPPLY VOLTAGE VDD V 10 GATE SUPPLY VOLTAGE VGG V -10 INPUT POWER Pin dBm 20 POWER DISSIPATION

TMD1414-1G

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1414-1G MICROWAVE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY ABSOLUTE MAXIMUM RATINGS Ta=25°°C CHARACTERISTICS SYMBOL UNIT RATINGS DRAIN SUPPLY VOLTAGE VDD V 10 GATE SUPPLY VOLTAGE VGG V -10 INPUT POWER Pin dB 20 POWER DISSIPATION

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1414-1L P RELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n SUITABLE FOR KU-BAND VSAT n HIGH POWER P1dB=32.0dBm at 14.0GHz to 14.5GHz n HIGH GAIN G1dB=27.0dB at 14.0GHz to 14.5GHz ABSOLUTE MAXIMUM RATINGS Ta= 25° C

LDB 107

Abstract: TMD1414-02C
Contextual Info: MICROWAVE POWER MMIC AMPLIFIER T M D 1414-02C MICRO WA VE SEMICONDUCTOR TECHNICAL DATA FEATURES • Suitable for Ku-band VSAT ■ High Gain GldB=36dB TYP. Broadband Operation f=13.75-14.5GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL UNIT RATINGS DRAIN SUPPLY VOLTAGE

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

MT4S300T

Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors

TMD1414-02

Contextual Info: MICROWAVE POWER MMIC AM PLIFIER T M D 1414-02 MICRO WA VE SEMICONDUCTOR TECHNICAL DATA FEATURES • Suitable for Ku-band VSAT ■ High Gain GldB=36dB TYP. H Broadband Operation f=13.75-14.5GHz. ABSOLUTE MAXIMUM

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

TGI8596-50

Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
Contextual Info: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4

2sc5066

Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs

TMD1414-2

Abstract: TGM9398-25 8596-50
Contextual Info: Product Guide 2014 Microwave Semiconductors GaAs MMICs L and S-band Partially Matched Power GaAs FETs Pout vs. Frequency Map 80 49 48 60 TPM2828-60❋ TPM1919-60 40 46 44 ● Output Power vs. Frequency Map GaAs MMICs L and S-band Partially Matched Power GaAs FETs . 3

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T M D 1414-2 MICRO WA VE SEMICONDUCTOR PRELIMINARY TECHNICAL DATA FEATURES • Suitable for K u-band VSAT ■ H igh Power ■ H igh Power Added Efficiency PldB=34.5dBm TYP. H igh G ain r? add=29%(TYP.) GldB=26dB(TYP.)

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T M D 1414-1 MICRO WA VE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY FEATURES • Suitable for Ku-band VSAT * High Power ■ High Power Added Efficiency PldB=31.5dBm TYP. High Gain 7) add=29%(TYP.) GldB=26dB(TYP.) Broadband Operation

D1414

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T M D 1 4 1 4 -1 T M D 1 4 1 4 -1 B T M D 1 4 1 4 -1 C MICROWA VE SEMICONDUCTOR TECHNICAL DATA Three different pin out configuration FEATURES • Suitable for Ku-band VSAT ■ High Power ■ High Power Added Efficiency

RFM70U12D

Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック