TK50 Search Results

TK50J60U

Abstract: SC-65 jeita sc-65 DTMOS 3
Contextual Info: TK50J60U MOSFET シリコンNチャネルMOS形 DTMOS TK50J60U 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 0.056 Ω (標準) (2) 順方向伝達アドミタンスが高い。: |Yfs| = 30 S (標準)

Contextual Info: TK50S04K3L MOSFETs Silicon N-channel MOS U-MOS TK50S04K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = 10 V)

TK50P03M1

Abstract: tk50p03m TC5016
Contextual Info: TK50P03M1 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TK50P03M1 High-Efficiency DC-DC Converter Applications Desktop PC Applications High forward transfer admittance: |Yfs| = 90 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 30 V)

Contextual Info: TK50P04M1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK50P04M1 1. 用途 • スイッチングレギュレータ用 • モータドライブ用 2. 特長 (1) スイッチングスピードが速い。 (2) ゲート入力電荷量が小さい。: QSW = 9.4 nC (標準)

Toggle Switches

Abstract: Toggle Switches TK50
Contextual Info: Toggle Switches TK50 Series Washable Sub-Miniature Toggle Switches TK50S1T2AUE_ TK50D1T2AUE_ P. C MOUNTING P. C MOUNTING TK50D1T7AUE_ TK50S1T6AUE_ P. C MOUNTING P. C MOUNTING TK50S1T7AUE_ TK50D1T7AUE_ P. C MOUNTING P. C MOUNTING Switch Function No. Poles Part No.

Contextual Info: TK50J60U MOSFETs Silicon N-Channel MOS DTMOS TK50J60U 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.056 Ω (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)

Contextual Info: TK50S04K3L MOSFETs Silicon N-channel MOS U-MOS TK50S04K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = 10 V)

TK50J60U

Contextual Info: TK50J60U MOSFETs Silicon N-Channel MOS DTMOS TK50J60U 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.056 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 30 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)

Contextual Info: TK50S04K3L MOSFETs Silicon N-channel MOS U-MOS TK50S04K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = 10 V) (2)

Contextual Info: TK50J30D MOSFET シリコンNチャネルMOS形 π-MOS TK50J30D 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 0.04 Ω (標準) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 300 V)

Contextual Info: TK50F15J1 MOSFETs Silicon N-Channel MOS U-MOS-H TK50F15J1 1. Applications • Switching Voltage Regulators • DC-DC Converters 2. Features (1) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V)

TK50A04K3

Contextual Info: TK50A04K3 MOSFETs Silicon N-channel MOS U-MOS TK50A04K3 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

Contextual Info: TK50J60U MOSFETs Silicon N-Channel MOS DTMOS TK50J60U 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.056 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 30 S (typ.) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)

Contextual Info: TK50J30D MOSFETs Silicon N-Channel MOS π-MOS TK50J30D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.04 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

Contextual Info: TK50A04K3 MOSFET シリコンNチャネルMOS形 U-MOS  TK50A04K3 1. 用途 • 車載用 • モータドライブ用 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 2.7 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 40 V)

TA521

Abstract: TA523 TK501 ABB TK501 LIYCY 783F TA525 sub-d 25 LIYCY connector 1,0 mm subd
Contextual Info: System Freelance 800F AC 700F: CPU Accessories Data Sheet Contents AC 700F: CPU Accessories 1. Lithium Battery TA521 2. Dummy Coupler Module TA 724F 3. Programming Cable TK501 AC 700F: I/O Modules Accessories 1. Pluggable Marking Holder TA523 AC 700F: Common Accessories

Contextual Info: TK50P04M1 MOSFETs Silicon N-Channel MOS U-MOS-H TK50P04M1 1. Applications • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Low gate charge: QSW = 9.4 nC (typ.) (3) (4) (5) Low drain-source on-resistance: RDS(ON) = 6.7 mΩ (typ.) (VGS = 10 V)

Contextual Info: TK50F15J1 MOSFETs Silicon N-Channel MOS U-MOS-H TK50F15J1 1. Applications • Switching Voltage Regulators • DC-DC Converters 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V)

TK50P04M

Abstract: TK50P04M1
Contextual Info: TK50P04M1 MOSFETs Silicon N-Channel MOS U-MOS-H TK50P04M1 1. Applications • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Low gate charge: QSW = 9.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 6.7 mΩ (typ.) (VGS = 10 V)

Contextual Info: TK50S04K3L MOSFETs Silicon N-channel MOS U-MOS TK50S04K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = 10 V) (2)

Contextual Info: TK50A04K3 MOSFETs Silicon N-channel MOS U-MOS TK50A04K3 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

TK12.5A

Abstract: TK30A TK20A 1x28 hall current transducer 5A TK18 TK50A TK25A TK37
Contextual Info: Topstek Current Transducer TK3A . TK50A TK 3A~50A Applications Features iHighly reliable Hall Effect device iCompact and light weight iFast response time iExcellent linearity of the output voltage over a wide input range iExcellent frequency response > 50 kHz

K50X15J

Abstract: TK50X15J1
Contextual Info: TK50X15J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK50X15J1 DC-DC Converters • Unit: mm Low drain-source ON-resistance: RDS (ON) = 22 mΩ (typ.) • High forward transfer admittance: |Yfs| = 90 S (typ.) •

tk50p03m

Abstract: TK50P03M1
Contextual Info: TK50P03M1 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅥ-H TK50P03M1 ○ DC-DC コンバータ用 ○ スイッチングレギュレータ用 1.01MAX • オン抵抗が低い。 : RDS (ON) = 5.8 mΩ (標準) • 順方向伝達アドミタンスが高い。