TK4A55D Search Results

TK4A55DA

Contextual Info: TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

TK4A55D

Contextual Info: TK4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A55D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 550 V)

TK4A55D

Contextual Info: TK4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A55D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 550 V)

TK4A55DA

Abstract: Hints
Contextual Info: TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

Contextual Info: TK4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK4A55D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.5 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 550 V)

TK4A55D

Contextual Info: TK4A55D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK4A55D ○ スイッチングレギュレータ用 単位: mm Ф3.2 ± 0.2 2.7 ± 0.2 10 ± 0.3 A 3.9 3.0 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.0 S (標準)

TK4A55DA

Contextual Info: TK4A55DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK4A55DA ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) 10 ± 0.3 Ф3.2 ± 0.2 : IDSS = 10 A (最大) z 漏れ電流が低い。

TK4A55DA

Contextual Info: TK4A55DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK4A55DA ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 1.8 S (標準)

Contextual Info: TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

TK4A55D

Contextual Info: TK4A55D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK4A55D ○ スイッチングレギュレータ用 単位: mm Ф3.2 ± 0.2 2.7 ± 0.2 10 ± 0.3 A 3.9 3.0 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.0 S (標準)

Contextual Info: TK4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)

Contextual Info: TK4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK4A55D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 550 V)

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

transistor compatible 2SK3569

Abstract: TK12A65D 2SK3569 equivalent tk6a65d equivalent TB-7005 TPCA8019-H TPCA8023-H tk10a60d equivalent TPCA8030-H p 181 Photocoupler
Contextual Info: 2009-3 SYSTEM CATALOG Semiconductors for Power Supplies SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng AC-Input Switching Power Supply Circuits and Recommended New Product Series ● Secondary rectifier 1. Ultra-high-speed N-channel trench MOSFET U-MOSIII-H Series

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

toshiba laptop charging CIRCUIT diagram

Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
Contextual Info: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5

TK12A10K3

Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4

tpc8118 equivalent replacement

Abstract: SSM3J307T Zener diode smd 071 A01
Contextual Info: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

TK12A10K3

Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Contextual Info: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

tk20e60u

Abstract: TPCA*8030 5252 F solar TK13A65D 4614 inverter driver tcv7104 TB6830WBG 4614 mosfet TC7750FTG 5252 solar cell chip
Contextual Info: 2010-5 SYSTEM CATALOG Semiconductors for Power Supplies h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g –2 Power Supply Circuit Types and Their Applications Power supply circuitry includes two blocks: an AC-DC block that converts an alternating current to a direct current, and a DC-DC

TIS84

Abstract: TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763
Contextual Info: STI Type: TIP539 Notes: Polarity: NPN Power Dissipation: 125 VCEV: 400 VCEO: 300 ICEV: 400 ICEV A: 1.0 hFE: 20 hFE A: 7.5 VCE: 2.5 VBE: 2.0 IC: 15 COB: fT: 10 Case Style: TO-204AA/TO-3: Industry Type: TIP539 STI Type: TIP540 Notes: Polarity: NPN Power Dissipation: 125