TK40A Search Results

K40A10K3

Abstract: TK40A10K3
Contextual Info: TK40A10K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ TK40A10K3 スイッチングレギュレーター用 単位: mm : RDS (ON) = 11.5 mΩ (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 80 S (標準)

TK40A08K3

Abstract: K40A08K3 TK40A
Contextual Info: TK40A08K3 シリコンNチャネルMOS形 U-MOSⅣ 東芝電界効果トランジスタ TK40A08K3 スイッチングレギュレーター用 単位: mm :RDS (ON) = 7.0 mΩ (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。:|Yfs| = 93 S (標準)

Contextual Info: TK40A10N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK40A10N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 6.8 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 100 V)

Contextual Info: TK40A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

Contextual Info: TK40A06N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK40A06N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 8.4 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 60 V)

TK40A10J1

Abstract: K40A10J
Contextual Info: TK40A10J1 東芝電界効果トランジスタ シリコンNチャネルMOS形 超高速U-MOSⅢ TK40A10J1 スイッチングレギュレーター用 単位: mm z ゲート入力電荷量が小さい。 : Qg= 76 nC (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 90 S (標準)

Contextual Info: TK40A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

Contextual Info: TK40A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

Contextual Info: TK40A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

K40A10J

Abstract: k40a10 K40A
Contextual Info: TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK40A10J1 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 76nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) •

Contextual Info: TK40A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

Contextual Info: TK40A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

Contextual Info: TK40A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

TK40A10J1

Contextual Info: TK40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK40A10J1 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 76nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) •

Contextual Info: TK40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS TK40A10K3 Switching Regulator Application • Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)

Contextual Info: TK40A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

Contextual Info: TK40A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

Contextual Info: TK40A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK40A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

fast tlp785

Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
Contextual Info: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible