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    K40A10 Search Results

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    K40A10 Price and Stock

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    Toshiba America Electronic Components TK40A10N1,S4X

    MOSFET N-CH 100V 40A TO220SIS
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    DigiKey TK40A10N1,S4X Tube 1
    • 1 $2.94
    • 10 $2.94
    • 100 $1.32
    • 1000 $0.99
    • 10000 $0.93
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    Avnet Americas TK40A10N1,S4X Tube 12 Weeks 50
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    • 100 $1.30
    • 1000 $0.93
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    Mouser Electronics TK40A10N1,S4X 2
    • 1 $2.94
    • 10 $1.47
    • 100 $1.46
    • 1000 $1.07
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    Glenair Inc ITS4106RFK40-A10PB1M62N2N5

    5015 REVERSE BAYONET POWER PRODUCTS - Bulk (Alt: ITS4106RFK40-A10PB1M62N2N5)
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    Avnet Americas ITS4106RFK40-A10PB1M62N2N5 Bulk 5 Weeks 1
    • 1 $10412.49
    • 10 $4325.14
    • 100 $4325.14
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    Mouser Electronics ITS4106RFK40-A10PB1M62N2N5
    • 1 $10709.98
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    Newark ITS4106RFK40-A10PB1M62N2N5 Bulk 1
    • 1 $10555.77
    • 10 $4810.94
    • 100 $3763.86
    • 1000 $3763.86
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    Glenair Inc ITB4103AFK40-A10SB1M62G1

    5015 REVERSE BAYONET POWER PRODUCTS - Bulk (Alt: ITB4103AFK40-A10SB1M62G1)
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    Avnet Americas ITB4103AFK40-A10SB1M62G1 Bulk 5 Weeks 1
    • 1 $3576.38
    • 10 $1485.56
    • 100 $1485.56
    • 1000 $1485.56
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    Mouser Electronics ITB4103AFK40-A10SB1M62G1
    • 1 $3678.55
    • 10 $3678.55
    • 100 $3678.55
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    Newark ITB4103AFK40-A10SB1M62G1 Bulk 1
    • 1 $3625.59
    • 10 $1652.42
    • 100 $1292.78
    • 1000 $1292.78
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    Toshiba America Electronic Components TK40A10N1,S4X(S

    MOSFET, P-CHANNEL, 100V, 90A, TO-220SIS; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TK40A10N1,S4X(S Cut Tape 1,597 1
    • 1 $2.27
    • 10 $1.99
    • 100 $1.45
    • 1000 $1.14
    • 10000 $1.14
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    EBV Elektronik TK40A10N1,S4X(S 19 Weeks 50
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    Vishay Intertechnologies VS-43CTQ100SHM3

    Schottky Diodes & Rectifiers Schottky - D2PAK-e3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI VS-43CTQ100SHM3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.31
    • 10000 $1.25
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    Find more K40A10 price and stock on Findchips.com

    K40A10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K40A10K3

    Abstract: TK40A10K3
    Contextual Info: K40A10K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ K40A10K3 スイッチングレギュレーター用 単位: mm : RDS (ON) = 11.5 mΩ (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 80 S (標準)


    Original     		TK40A10K3 SC-67 2-10U1B K40A10K3 TK40A10K3 PDF

    TK40A10J1

    Abstract: K40A10J
    Contextual Info: K40A10J1 東芝電界効果トランジスタ シリコンNチャネルMOS形 超高速U-MOSⅢ K40A10J1 スイッチングレギュレーター用 単位: mm z ゲート入力電荷量が小さい。 : Qg= 76 nC (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 90 S (標準)


    Original     		TK40A10J1 SC-67 2-10U1B TK40A10J1 K40A10J PDF

    K40A10J

    Abstract: k40a10 K40A
    Contextual Info: K40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K40A10J1 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 76nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) •


    Original     		TK40A10J1 K40A10J k40a10 K40A PDF

    TK40A10J1

    Contextual Info: K40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K40A10J1 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 76nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) •


    Original     		TK40A10J1 TK40A10J1 PDF

    K40A10K3

    Abstract: TK40A10K3 k40a10
    Contextual Info: K40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ K40A10K3 Switching Regulator Application • Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)


    Original     		TK40A10K3 K40A10K3 TK40A10K3 k40a10 PDF

    Contextual Info: K40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS K40A10K3 Switching Regulator Application • Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)


    Original     		TK40A10K3 137led PDF