TIP112 TRANSISTOR Search Results

TIP111G

Abstract: TIP117 TIP110 TIP110G TIP111 TIP112 TIP112G TIP115 TIP115G TIP116
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) TIP111, TIP112, TIP116, and TIP117 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Designed for general-purpose amplifier and low-speed switching applications. Features

10 amp npn darlington power transistors

Abstract: transistor 600 volts.50 amperes 100 amp npn darlington power transistors transistor 400 volts.50 amperes driver transistor hfe 60 TIP110/111/112 TO-220 Darlington npn to-220 NPN 200 VOLTS POWER TRANSISTOR npn darlington transistor 150 watts
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) TIP111, TIP112, TIP116, and TIP117 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general-purpose amplifier and low-speed switching applications.

tip117 TRANSISTOR equivalent

Abstract: TIP110 TIP110G TIP111 TIP111G TIP112 TIP115 TIP116 TIP117 TIP110 application note
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) TIP111, TIP112, TIP116, and TIP117 are Preferred Devices Plastic Medium−Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching

TIP112

Abstract: power darlington npn transistor UTC LCD driver
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP112 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR „ DESCRIPTION The UTC TIP112 is designed for such applications as: DC/DC converters supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications e.g.

TIP112G

Abstract: TIP112 TIP112L-T60-K Inductive Load Driver
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP112 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR „ DESCRIPTION The UTC TIP112 is designed for such applications as: DC/DC converters，supply line switching, battery charger ,LCD backlighting, peripheral drivers, Driver in low supply voltage

UTC LCD driver

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP112 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR „ DESCRIPTION The UTC TIP112 is designed for such applications as: DC/DC converters supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications e.g.

TIP110

Abstract: TIP111 TIP112 TIP115 TIP116 TIP117 TIP11S tip111.tip116 tipi transistor TIP112 boca
Contextual Info: PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS NPN TIP110 TIP111 TIP112 .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining Voltage60 V Min - TIP110.TIP115 CEO(SUS) = 80 V (Min) - TIP111 ,TIP116

MJE224

Abstract: tip111g TIP11X
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • •

Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • •

MJE224

Abstract: pnp power transistor
Contextual Info: ON Semiconductor NPN Plastic Medium−Power Complementary Silicon Transistors TIP110 TIP111* . . . designed for general−purpose amplifier and low−speed switching applications. TIP112 * PNP • High DC Current Gain — • • • • TIP115 hFE = 2500 Typ) @ IC

TIP112

Contextual Info: DC COMPONENTS CO., LTD. TIP112 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low-speed switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter

darlington power transistor

Abstract: TIP110/111/112 TIP110-D transistor 400 volts.50 amperes 1N5825 MSD6100 TIP110 TIP111 TIP112 TIP115
Contextual Info: ON Semiconductort NPN Plastic Medium-Power Complementary Silicon Transistors TIP110 TIP111* . . . designed for general–purpose amplifier and low–speed switching applications. TIP112 * PNP • High DC Current Gain — • • • • TIP115 hFE = 2500 Typ @ IC

TIP11S

Abstract: TIP112 TIP117 TIP110 TIP111 TIP115 TIP116 tip111.tip116 TIP112T
Contextual Info: Æâ m o spec PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS NPN TIP110 TIP111 TIP112 .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining Voltage60 V Min - TIP110.TIP115 CEO(SUS)

Contextual Info: SEMICONDUCTOR TIP112 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES ・High DC Current Gain. : hFE=1000 Min. , ＠VCE=4V, IC=1A. ・Low Collector-Emitter Saturation Voltage.

Contextual Info: Darlington Power Transistors Part No. 2N6037 2N6038 2N6039 2N6034 2N6036 TIP100 TIP110 TIP120 TIP130 TIP101 TIP111 TIP121 TIP131 TIP102 TIP112 TIP122 TIP132 TIP105 TIP115 TIP125 TIP106 TIP116 TIP126 TIP107 TIP117 TIP127 Polarity NPN PNP NPN PNP VCEO IC Bipolar Transistors

TIP112

Abstract: 1N5825 MSD6100 TIP110 TIP111 TIP115 TIP116 TIP117
Contextual Info: ON Semiconductor NPN Plastic Medium-Power Complementary Silicon Transistors TIP110 TIP111* . . . designed for general–purpose amplifier and low–speed switching applications. TIP112 * PNP • High DC Current Gain — • • • • TIP115 hFE = 2500 Typ) @ IC

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP110 TIP111 TIP112 NPN TIP115 TIP116 TIP117 PNP TO-220 Plastic Package Intended for use in Medium Power Linear and Switching Applications

Contextual Info: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)

UTCTIP112

Abstract: QW-R203-022
Contextual Info: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP117 TO – 220 TRANSISTOR PNP 1. BASE FEATURES z High DC Current Gain z Low Collector-Emitter Saturation Voltage z Complementary to TIP112 2. COLLECTOR 3. EMITTER

Contextual Info: TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage

TIP112

Contextual Info: TIP112 Darlington Transistors Features: • NPN Plastic Power Transistors. • General Purpose Darlington Amplifier and Low Speed Switching Applications. TO-220 Plastic Package Dimensions Minimum Maximum A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D - 0.90 E 1.15

TIP112

Abstract: darlington transistor NPN
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP112 DARLINGTON TRANSISTOR NPN TO-220 1. BASE FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use

TIP110

Abstract: TIP111 TIP112 TIP115 TIP116 TIP117
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PLASTIC POWER TRANSISTORS TIP110 TIP111 TIP112 NPN TIP115 TIP116 TIP117 PNP TO-220 Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC