TIC 31 Search Results

Contextual Info: Data Sheet TIC 300CC, TIC 300HV Tic Tracers AC Voltage Detectors •■ TIC 300CC measures to 1500 V ■■ TIC 300HV with two measurement ranges, 1500 V, 122kV ■■ Used to check fuses, breaker panels, power outlets, load break connectors, transmission lines, etc.

Contextual Info: Data Sheet TIC 300CC, TIC 300HV Tic Tracers AC Voltage Detectors No hassle warranty No waiting. No shipping charges. Our commitment to high-quality products and customer service is demonstrated by our industry exclusive “No Hassle” warranty. In the unlikely event

"binary to bcd"

Abstract: binary bcd conversion logic diagram 74F582 binary to bcd conversion binary to bcd 82S82 SUBTRACTION bcd arithmetic f582
Contextual Info: 582 54F/74F582 C o n n e c tio n D iag ram s 4-Bit BC D A rith m e tic Logic Unit D e sc rip tio n The ’ F582 is a 24-pin expandable A rith m e tic Logic Unit ALU that per­ form s tw o a rith m e tic operations (A plus B, A m inus B), com pare (A equals

SY2128

Abstract: Synertek 2128-3 RAM SYP2128-1 SYP2128-4 28L-1 SYP21
Contextual Info: SY2128 2048 x 8 Static Random Access Memory S v n e rte k . Features • • • • • • 1 0 0 nsec M a x im u m A ccess T im e F u lly S ta tic O pe ration : No C locks o r S trob es R equired A u to m a tic CE P o w e r D ow n Id e n tic a l C ycle a n d A cce ss T im e s

Contextual Info: 128K x 32, 256K x 32 3.3V CMOS STATIC RAM MODULES Integrated Device Technology, Inc. PRELIMINARY IDT7MPV4060 IDT7MPV4145 FEATURES: DESCRIPTION: • High d ensity 4 m egabit and 8 m egabit sta tic RAM m odules T he ID T 7M P V 4060 is a 128K x 32 sta tic RAM m odule

rse2

Contextual Info: AC705 • ACT705 54AC/74AC705 • 54ACT/74ACT705 A rith m e tic Logic Unit fo r Digital Signal Pro c essin g A p p lic a tio n s Description Connection Diagrams uQ The ’A C /’ACT705 is a high-speed a rith m e tic processing integrated c irc u it w h ich is packaged in

TIC47

Abstract: TIC44 thyristor tic 126 TIC45 THYRISTOR TIC45 TIC46 TIC41 TIC45 AGK tic 260 TIC44 AGK
Contextual Info: TYPES TIC 44, TIC 45. TIC46, TIC47 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS S I L E C T t T H Y R IS T O R S t 600 m A D C • 30 thru 200 V O L T S Rugged, One-Piece Construction with Standard TO -18 100-mil Pin-Circle Configuration mechanical data

Contextual Info: VT900 Series PHOTOCONDUCTIVE CELL PACKAGE DIMENSIONS inch mm .0 7 0 (1 .7 8 ) .1 4 4 (3 .6 6 ) 1 .3 8 (3 5 .0 5 } AWG 24 TINNED C O PPER LEADS LEAD DIA. & P LA S TIC COATING NOT CONTROLLED WITHIN .10 (2 .5 ) OF CERAM IC SU B S TR A TE . P LA S TIC COATED TO

f182 CC

Abstract: F381 F382
Contextual Info: 381 54F/74F381 Connection Diagrams 4-Bit A rith m e tic Logic Unit A ,[T 2 0] V c c B i[T 3! A2 Ao | T ¿8] B2 Bo |~4~ 3zl a 3 S o|T 31] s, ¡T « ]C n Description The 'F381 perform s three a rith m e tic and three logic operations on two 4-bit words, A and B. Two additional select in pu t codes force the fu n ctio n

Contextual Info: I RevNo A 31,80 26.30 hemcmerr Date Revision n o te 2-M2.0 S ign atu re Checked 03-10-10 ORIGINAL SPECIFICATION MATERIAL I n s u la t o n T h e rm o p la s tic, r a t e d U L9 4V -0 C o n ta c ts ! C o p p e r Alloy Caps T h e rm o p la s tic, r a t e d U L9 4V -0

c1246

Abstract: C881
Contextual Info: E 20/10/6 EF 20 Core B66311 • In a c c o rd a n c e w ilh IE C 1 246 • E cores are supplied as pieces -»A-»,« I_ M a g n e tic c h a ra c te ris tic s (p e r se t) 1.1/A /e Ae A min Ze „ = 1 ,4 4 0101-' = 46,3 mm = 3 2 ,1 mm2 = 31,9 m m 2 = 1 490 m m 3

B66319-G-X167

Abstract: B66319GX167 B66319GX127 B66319-G-X127
Contextual Info: E 30/15/7 Core • • B66319 In accordance withDIN 41 295 E cores are supplied as pieces M a g n e tic c h a ra c te ris tic s per set 1//A =1,12 m m -1 /„ = 67 mm Ak - 60 mm2 •49 mm2 : 4 000 mm3 Approx. weight 22 g/set Ungapped Mate­ AL value rial

1130nC

Contextual Info: DS1245W PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1245W 3.3V 1024K Nonvolatile SRAM PIN ASSIGNMENT NC | 1 exte rna l p o w e r 32 | 31 11A15 30 | | NC A16 I • D ata is a u to m a tic a lly p ro te c te d d u ring p o w e r loss • R e p la c e s 1 2 8 K x 8 v o la tile s ta tic R AM , E E P R O M or

Signetics 2513

Abstract: 2513N 7x5 dot matrix 7x5 dot matrix display cm2141 signetics 2513n R03-2513 -CGR-001 64X7X5 2513NX crt 08 3m
Contextual Info: s ig n o tic s 64X8X5CHARACTER GENERATOR 2513 SILICON GATE MOS 2500 SERIES DESCRIPTION PIN CONFIGURATION Top V ie w T h e Signetics 2 5 1 3 is a high speed 25 60-b it Sta tic ROM N /l P A C K A G E organized as 6 4 x 8 x 5 . A standard 7 x 5 dot m a trix fits w ell in

ic LM 356 equivalent

Abstract: L272M equivalent I488P L7900cv tdb 4558 L7800CV TL 084 27m4 regulators equivalent l387a op amp mc 4558
Contextual Info: SELECTION GUIDE CMOS OP-AMPs Package Type Description Pins D: H: J: N: P la s tic m ic ro p a c k a g e M e ta l c a n C e rd ip P la s tic d u a l in lin e CMOS SINGLE TS 271, A.B Programmable 8 N.D.J Low Power Medium Supply Current High Speed 8 8 8 N.D.J

Contextual Info: STK10C68 T h e S im te k S T K 10C 68 is a fast sta tic RAM 2 5 ,3 0 , 35, and 45ns , w ith anonvo la tile e le ctrica lly-e ra sa b le PROM (EEPROM) e lem ent incorporate d in each sta tic m e m ory cell. T h e SRAM can be read and w ritten an unlim ited

54HC

Abstract: CD54HCT86
Contextual Info: High-Reliability High-Speed CMOS Logic ICs CD54HC85/3A CD54HCT85/3A Burn-ln Test-Circuit Connections Static O PEN 5-7 C D 5 4 H C /H C T 8 5 Dynamic U se S ta tic II fo r / 3 A b u rn -in a nd D y n a m ic fo r Life Test. S TA TIC B U R N -IN I GROUND Vcc (6V)

Contextual Info: a WE128K32-XXX WHITE /M ICRO ELECTRO N ICS 128Kx32 EEPROM MODULE, S M D 5962-94585 FEATURES • A c c ess T im e s of 140, 150, 200, 250, 3 00ns ■ ■ Packaging: ■ A u to m a tic Page W r it e O p e ra tio n • 66-pin, PGA Typ e, 1.075 inch sq uare, H e rm e tic C eram ic

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT / PD434001 4M -BIT CMOS FAST STATIC RAM 4M-W ORD BY 1-BIT Description The ¿¡PD434001 is a high speed, low pow er, 4 ,1 9 4 ,3 0 4 bits (4 ,1 9 4 ,3 0 4 w o rd s by 1 bit C M O S s ta tic RAM. The ¿¡PD434001 is packed in 32-pin p la s tic SOJ.

Contextual Info: gjJÎ'N 256K X 32 BiCMOS/CMOS STATIC RAM MODULE | | dt IDT7MP4045 Integrated Dev ce Technology, Inc. FEATURES: DESCRIPTION: • H igh d e n s ity 1 m e g a b y te s ta tic R A M m o dule T h e ID T 7 M P 4 0 4 5 is a 2 5 6 K x 3 2 s ta tic R A M m o dule

"binary to bcd"

Abstract: binary to bcd
Contextual Info: 582 54F/74F582 Connection Diagrams 4-Bit BCD A rithm etic Logic Unit Description The 'F582 is a 24-pin expandable A rith m e tic Logic U nit ALU th a t per­ form s tw o a rith m e tic op era tions (A plus B, A m inus B), com pare (A equals B), and binary to BCD conversion. In ad dition to a ripple carry ou tput,

TRANSISTOR 2SC 983

Abstract: INTERNATIONAL RECTIFIER TNR*G 1000C HFA16PA120C
Contextual Info: International i»r:Rectifier_ HEXFRED U n its C h a ra c te ris tic s 1200 V V rrm If A V 8.0 A trr (ty p ) 28 ns 140 nC Q r r (ty p ) HFA16PA120C ULTRA FAST, SOFT RECOVERY DIODE M a jo r R a tin g s a n d C h a ra c te r is tic s (p er Leg) Vr Provisional Data Sheet PD-2.361

Contextual Info: MITSUBISHI ME M O R Y CARD STA TIC R A M CARDS MF3128 M L D A P X X 8-b it Data Bus M F3256- M L D A P X X Static R A M C ard M F3512-M LD A P X X Connector Ty pe Two-piece 60-pin DESCRIPTION 160-pin connector M its u b is h i's sta tic R A M cards provide large

j 6815

Abstract: 21JP2-R
Contextual Info: DATA DISPLAY PRODUCTS blE J> m 2b44S20 DDOGbEO 247 « D D P ¡Sfili] M ULTI-CHIP LED s , 6-Chip Parallel D ata D isp lay P ro d u cts • Red, Orange, Amber, Yellow, Green, Blue, Red/Green • Parallel Configuration • Ceramic Substrate E le c tr o - O p tic a l C h a r a c te r r is tic s @ Ta = 25°c