TIC 31 Search Results

Contextual Info: Data Sheet TIC 300CC, TIC 300HV Tic Tracers AC Voltage Detectors No hassle warranty No waiting. No shipping charges. Our commitment to high-quality products and customer service is demonstrated by our industry exclusive “No Hassle” warranty. In the unlikely event

"binary to bcd"

Abstract: binary bcd conversion logic diagram 74F582 binary to bcd conversion binary to bcd 82S82 SUBTRACTION bcd arithmetic f582
Contextual Info: 582 54F/74F582 C o n n e c tio n D iag ram s 4-Bit BC D A rith m e tic Logic Unit D e sc rip tio n The ’ F582 is a 24-pin expandable A rith m e tic Logic Unit ALU that per­ form s tw o a rith m e tic operations (A plus B, A m inus B), com pare (A equals

SY2128

Abstract: Synertek 2128-3 RAM SYP2128-1 SYP2128-4 28L-1 SYP21
Contextual Info: SY2128 2048 x 8 Static Random Access Memory S v n e rte k . Features • • • • • • 1 0 0 nsec M a x im u m A ccess T im e F u lly S ta tic O pe ration : No C locks o r S trob es R equired A u to m a tic CE P o w e r D ow n Id e n tic a l C ycle a n d A cce ss T im e s

Contextual Info: 128K x 32, 256K x 32 3.3V CMOS STATIC RAM MODULES Integrated Device Technology, Inc. PRELIMINARY IDT7MPV4060 IDT7MPV4145 FEATURES: DESCRIPTION: • High d ensity 4 m egabit and 8 m egabit sta tic RAM m odules T he ID T 7M P V 4060 is a 128K x 32 sta tic RAM m odule

TIC47

Abstract: TIC44 thyristor tic 126 TIC45 THYRISTOR TIC45 TIC46 TIC41 TIC45 AGK tic 260 TIC44 AGK
Contextual Info: TYPES TIC 44, TIC 45. TIC46, TIC47 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS S I L E C T t T H Y R IS T O R S t 600 m A D C • 30 thru 200 V O L T S Rugged, One-Piece Construction with Standard TO -18 100-mil Pin-Circle Configuration mechanical data

f182 CC

Abstract: F381 F382
Contextual Info: 381 54F/74F381 Connection Diagrams 4-Bit A rith m e tic Logic Unit A ,[T 2 0] V c c B i[T 3! A2 Ao | T ¿8] B2 Bo |~4~ 3zl a 3 S o|T 31] s, ¡T « ]C n Description The 'F381 perform s three a rith m e tic and three logic operations on two 4-bit words, A and B. Two additional select in pu t codes force the fu n ctio n

Contextual Info: I RevNo A 31,80 26.30 hemcmerr Date Revision n o te 2-M2.0 S ign atu re Checked 03-10-10 ORIGINAL SPECIFICATION MATERIAL I n s u la t o n T h e rm o p la s tic, r a t e d U L9 4V -0 C o n ta c ts ! C o p p e r Alloy Caps T h e rm o p la s tic, r a t e d U L9 4V -0

c1246

Abstract: C881
Contextual Info: E 20/10/6 EF 20 Core B66311 • In a c c o rd a n c e w ilh IE C 1 246 • E cores are supplied as pieces -»A-»,« I_ M a g n e tic c h a ra c te ris tic s (p e r se t) 1.1/A /e Ae A min Ze „ = 1 ,4 4 0101-' = 46,3 mm = 3 2 ,1 mm2 = 31,9 m m 2 = 1 490 m m 3

B66319-G-X167

Abstract: B66319GX167 B66319GX127 B66319-G-X127
Contextual Info: E 30/15/7 Core • • B66319 In accordance withDIN 41 295 E cores are supplied as pieces M a g n e tic c h a ra c te ris tic s per set 1//A =1,12 m m -1 /„ = 67 mm Ak - 60 mm2 •49 mm2 : 4 000 mm3 Approx. weight 22 g/set Ungapped Mate­ AL value rial

1130nC

Contextual Info: DS1245W PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1245W 3.3V 1024K Nonvolatile SRAM PIN ASSIGNMENT NC | 1 exte rna l p o w e r 32 | 31 11A15 30 | | NC A16 I • D ata is a u to m a tic a lly p ro te c te d d u ring p o w e r loss • R e p la c e s 1 2 8 K x 8 v o la tile s ta tic R AM , E E P R O M or

Signetics 2513

Abstract: 2513N 7x5 dot matrix 7x5 dot matrix display cm2141 signetics 2513n R03-2513 -CGR-001 64X7X5 2513NX crt 08 3m
Contextual Info: s ig n o tic s 64X8X5CHARACTER GENERATOR 2513 SILICON GATE MOS 2500 SERIES DESCRIPTION PIN CONFIGURATION Top V ie w T h e Signetics 2 5 1 3 is a high speed 25 60-b it Sta tic ROM N /l P A C K A G E organized as 6 4 x 8 x 5 . A standard 7 x 5 dot m a trix fits w ell in

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT \i PD434008 4 M -BIT CMOS FAST STATIC RAM 512K-WORD BY 8 BITS Description The /¿PD434008 is a high speed, low p o w e r, 4 194 304 b its 524 288 w o r d s by 8 bits C M O S sta tic RAM T h e /¿PD434008 is packed in 36-pin p la s tic SOJ.

Contextual Info: a WE128K32-XXX WHITE /M ICRO ELECTRO N ICS 128Kx32 EEPROM MODULE, S M D 5962-94585 FEATURES • A c c ess T im e s of 140, 150, 200, 250, 3 00ns ■ ■ Packaging: ■ A u to m a tic Page W r it e O p e ra tio n • 66-pin, PGA Typ e, 1.075 inch sq uare, H e rm e tic C eram ic

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT / PD434001 4M -BIT CMOS FAST STATIC RAM 4M-W ORD BY 1-BIT Description The ¿¡PD434001 is a high speed, low pow er, 4 ,1 9 4 ,3 0 4 bits (4 ,1 9 4 ,3 0 4 w o rd s by 1 bit C M O S s ta tic RAM. The ¿¡PD434001 is packed in 32-pin p la s tic SOJ.

Contextual Info: D S 1650Y/A B DALLAS SEMICONDUCTOR DS1650Y/AB Partitionable 4096K NV SRAM FEATURES PIN ASSIGNMENT • D ata is a u to m a tic a lly p ro te c te d d u ring p o w e r loss • D ire c tly re p la c e s 5 1 2 K x 8 v o la tile s ta tic RAM A18 11 1 A16 11 A14

Contextual Info: 1 MEGABIT 128Kx 8-BIT CMOS STATIC RAM MODULE I IDT8M 824S Integrated D evice Technology. Inc FEATURES: • H ig h -d e n sity 1024K (128K x 8) C M O S sta tic RAM m o du le • E quiva len t to JE D E C sta n d ard fo r futu re m o n o lith ic 128K x 8 s ta tic RAMs

am79q021

Abstract: Am79Q031
Contextual Info: AM DZI Am79Q02/021/031 Quad Subscriber Line Audio-Processing Circuit QSLAC Devices TABLE OF CONTENTS Distinctive C h a ra c te ris tic s. 3

B64290K618X830

Abstract: B64290-K38-X830 B64290-K45-X830 B64290-K618-X830 B64290K632X830 B64290-K674-X830 B64290-K40-X830 B64290K44X830 B64290-K659-X830 B64290-K45-X27
Contextual Info: Ring Cores Coated ring cores are primarily used for pulse and broadband transformers as well as for balanced mixers and chokes. -ì h FUS0Q17-P C o re type D im ensions 2,5 1 0,12 R 4 1 4,5 R 6 . 3 1 I f /A h mm mm R 2 ,5 1? A p pro x. w e ig h t M a g n e tic c h a ra c te ris tic s

m33 tf 130

Abstract: 1001 fba hybrid
Contextual Info: Am79C02/03/031 A A M D ÎI Dual Subscriber Line Audio ProcessingCircuit (DSLAC ) Devices TABLE OF CONTENTS Distinctive C h a ra c te ris tic s .2-7

MK1007P

Abstract: DTL or TTL integrated logic circuits MK1007 TMS3409 LTRT ic PIN-FOR-PIN REPLACEMENT 2S32B
Contextual Info: s ig n o tic s QUAD 80 BIT S T A T IC SH IFT H w i r i a 2532 SILICON GATE MOS 2500 SERIES d e s c r ip t io n Th eSig n etits 2 532 Sta tic » ¡ f t Register consists of enhance­ ment mode P-Channel silicon gate MOS devices integrated on a single m onolithic chip. Each o f the fo ur 8 0 -b it reqisters

79Q031

Contextual Info: PH F:LiîvllNAR S Am79Q02/021/031 AMD£I Quad Subscriber Line Audio-Processing Circuit QSLAC Devices TABLE OF CONTENTS Distinctive C h a ra c te ris tic s . 2 - 5 3

SN74LSOO

Abstract: SN5400 SN74SOO SN74H00 SN54L00 schematic diagram NAND gates SN54H00 SN54LS00 SN54S00 SN7400
Contextual Info: TYPES SN5400, SN54H00, SN54L00, SN54LS00, SN54S00, SN7400, SN74H00, SN74LS00, SN74S00 QUADRUPLE 2-IN PUT POSITIVE-NAND GATES R E V IS E D D E C E M B E R 1 9 8 3 • P a c k a g e O p tio n s In c lu d e B o th P la s tic a n d C e r a m ic C h ip C a rrie rs in A d d itio n to P la s tic

Contextual Info: D S1643/DS1643P PRELIMINARY DALLAS SEMICONDUCTOR DS1643/DS1643P Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • In te g ra te d N V S R A M , real tim e c lock, c rysta l, p o w e rfail c o n tro l c irc u it a n d lithium e n e rg y s o u rce • C lo c k re g is te rs a re a c c e s s e d id e n tic a l to th e sta tic

da152

Abstract: 74as895 1/tic 2250
Contextual Info: SN54AS895, SN74AS895 8 BIT M EM O R Y AD D R ESS G ENERATORS NOVEMBER 1 9 8 5 -R E V IS E D APRIL 1 9 8 6 • • ■ • I I • • • S ig n, C arry O u t, O v e rflo w , and Z e ro -D e te c t and O u tp u ts • E x c es s -3 BCD A rith m e tic 1 3 A rith m e tic and Logic Functions