TIC 138 Search Results

HC-88

Abstract: hc81
Contextual Info: 7. COMMON E L E C T R IC A L C H A R A C T E R IS T IC S 7-1 Powtr Dissipation T h e pow er d issip a tio n of CMOS device is com posed of tw o com ponents: one s ta tic , the o th e r d y n am ic. T h e to ta l pow er d issip a tio n is the B u m of sta tic a n d d y n a m ic pow er d issip atio n .

s-1311

Contextual Info: C Integrated DeviceTechnology, Inc IDT 7M656L 256K CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • H ig h -d e n sity 2 5 6 K -b it C M O S s ta tic RAM m o du le • C u sto m e r-co n fig u re d to 16Kx16, 32K x8 o r 64Kx4 • Fast a cce ss tim e s T h e ID T7M 656 Is a 256 K -b it h ig h -s p e e d C M O S sta tic RAM c o n ­

Contextual Info: Up/Down Counting Meter omRon K3NC Up/Down Counting Meter Operation Manual Produced January 1998 iv N o tic e : OMRON products are manufactured for use according to proper procedures by a qualified operator and only for the purposes described in this manual.

50E30

Contextual Info: Preliminary IM P 50E 30 EPAC Programmable Monitoring and Diagnostic 1C Electrically Programmable Analog Circuit Introduction The IM P5 0 E3 0 is a programmable IC offering a variety o f m onitoring, diagnos­ tic and data-acquisition capabilities. Its operating modes increase system

Contextual Info: IM P O R T A N T N O TIC E All new designs should use XC3000A or XC3100A. Information on XC3000 and XC3100 is presented here as reference for existing designs. £ x il in x XC3000, XC3000A, XC3000L, XC3100, XC3100A Logic Cell Array Families Product Description

bonder

Abstract: JS9P05-AS
Contextual Info: MICROWAVE POWER G aAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm @ f = 38GHz ■C H IP FORM BHIGH GAIN GldB= 6. 5dB @ f =38GHz RF PERFORMANCE SPECIFICATIONS C H A R A C TE R IS TIC S SYMBOL Output Power at 1dB

Contextual Info: D IbE • t 3 M U 6 0 2 000147=1 Sbl MSS Series Standard Size Slide Switches SPECIFICATIONS FEATURES SPECIFICATIONS SUBJECT TO CHANGE WITHOUT N O TIC E C o n tact ratings: Gold; 0.4 Volt-Amps VA max. at • Bifurcated wiping contact design. 20 V max. (AC or DC)

S60S4

Abstract: S60S3
Contextual Info: SHINDENGEN ELECTRIC Ml;6 M1E » • 621=1387 □000051 T « S H E J S60S Zv 60A # R a tin g s C h a ra c te ris tic s Absolute M AX. Ratings Symbol Type C o n d itio n S60S3 -— — S to ra ge Tem perature Range T s tg Junction T em p e ra tu re T| Peak Reverse Voltage

0820R

Abstract: KM62256B
Contextual Info: KM681OOOBLI/BLI-L ~l3 1 , 0 V2 W O R D X CMOS SRAM 8 B it C M O S S ts tic R A M Industrial Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation

Contextual Info: GS Series Standardise q q FEATURES 1. High CV value, guarantee 2000 hrs load life at 85°C 2. Suitable for use in electronic circuits in colour TV receiver, videocoder etc. SPECIFICATIONS r Ite m P e rfo rm a n c e C h a ra c te ris tic s Operating Temperature Range

290-009

Contextual Info: U LTR A HA R S H-E N VI RO N M EN T GEO-MARINE H I G H - PR ESSUR E ENV IRONME NTAL AND HE RME TIC CONNE CTORS AN D CABL ES MAY 2014 GEO-MARINE ® SERIES 22 Geo-Marine Rugged marine bronze / stainless steel harsh-environment connectors, cables, and accessories

Contextual Info: DRWD BY SIGN Ca CHK'D BY TITLE SIGN KN APP'D BY SIGN JB Male c o n n e c to r 9SU Dimensions Technical Data PS-851*1 *-0005 MOLEX EUROPE SCALE SHEET NO. DATE I0F2 91/07/31 DWG NO. TIC C6SIOI 01106KM. 10KB IS SECPOWT 9 8 7 s _ ?_ A 2:1 SEE CHART

Contextual Info: GF Series +105°C, High Ripple Current g$£;J$ , Low Impedance('gpitrbpp) FEATURES 1. Low impedance for high frequency 2. Life time: 2000-4000 hours at 105°C SPECIFICATIONS Ite m P e rfo rm a n c e C h a ra c te ris tic s Operating Temperature Range -40 to +105°C

Contextual Info: □ Linear Tuning M ini-C ircuits POS-50/JTOS-50 25 to 50 MHz POWER OUTPUT PHASE NOISE FR E Q U E N C Y M H z TUNING CHAR A C TE R IS TIC S TUNING VOLTAGE (V) TUNIMG VOLTAGE (V) CARRIER OFFSET (Hz) Pout (dBm) +25°C PHASE NOISE V-TUNE FREQUENCY (MHz) TUNING

4582B

Abstract: 4705B cd 4582B 4000B 4705BX fairchild CMOS 4000B series
Contextual Info: J \ ' 4705B/4705BX ARITHMETIC LOGIC REGISTER STACK ù F A IR C H IL D C M O S M A C R O L O G IC DESCRIPTIO N — The A rith m e tic Logic Register Stack A LR S is designed to implement accumulators in high performance m icroprogram m ed d igita l systems. The device contains

Contextual Info: S G S -ÏH O M S O N KÆ0ra@[EL[iûre ^0 i BZV47C5V1 / 200 2W ZENER DIODES FEATURES • VOLTAGE RANGE :5 .1 V to 200 V ■ HERMETICALLY SEALED P LA S TIC C ASE: F126 PACKAGE ■ HIGH SURGE C A P A B ILITY : 55 W 10 m s . DESCRIPTION 2 W silicon Zener diodes.

IN6281

Abstract: in6294 IN6303
Contextual Info: EDAL Transient Voltage Suppressor Diodes The plastic material c a rrie s U/L recognition 94V -0 1N6267 Series*. 1 5 0 0 W , DO-201AD- P la s tic C a s » O u tlin * r 3.' at iT W orking Peak R ev erse Voltage ^RWM Maximum R ev erse L eak age at VRWM mA 10

Contextual Info: 4704B/4704BX DATA PATH SWITCH FAIRCHILD CMOS MACROLOGIC DESCRIPTIO N — The 4704B /4704B X Data Path S w itch DPS is a com binatorial array fo r closing data path loops around a rith m etic/logic netw orks such as the 4705B /4705B X (A rith m e tic Logic Register Stack). A to ta l o f 30 instructions (see

a1t diode

Contextual Info: SIEM ENS SFH 487 GaAs INFRARED EMITTER Package Dimensions in Inches mm Surface not flat— 204 (5 2) 177(4 5) 024 ( 6) 028 ( 7) 016( 4) (X _ ¿ r T 100 (2 54) I 071 (1 8} ^047(1 2) 1 140(29) 1 061 (27} FEATURES C h a ra c te ris tic s (T A= 2 5 °C ) • Radiant Intensity Selections

ST 1803 DHL

Contextual Info: I ntegrator Series FPGAs: 40MXand 42MX Families Features • D e te rm in is tic , U s e r-C o n tro lla b le T im in g Via D ire c tT im e S oftw are Tools. • M X D iagnostics and Debug S upported by S ilicon E xplorer. • Supported by A ctel Designer Series D evelopm ent System

Contextual Info: 27-March&#39;98 PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> N o tic e : T his is n o t a fin a l s p e c ific a tio n . S o m e p a ra m e tric lim its are s u b je c t to c h a n g e MGFC45V6472A 6.4-7.2GHZ BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION

Contextual Info: in t e l October 1998 N o tic e : T his docum ent contains inform ation on products in th e design phase o f developm ent. Do not fin al­ ize h design w ith this inform ation. R evised in ib n n a tio n will be p u blished w hen the pro d u ct is available.

LT 8224

Abstract: lt 8239 IC AN 8224 8239 sfu 455b MB204 HD6437034R
Contextual Info: IC dependence of o s c illa t in g c h a r a c t e r is tic s HD6437034R FCR20.0M2G - STD \ Ite» IC N o \ l. CV] V1H/V1L H0403 5.3 H0203 5.4 H0204 5.4 -.3 b. CV] V2H/V2L 5.3 -.2 5.3 -.6 -.3 5.3 -.3 Room Temp. Vdd CV] c. CHHz] d. CuS] «. 5 CX] item a~e

Contextual Info: CXK58258P/SP -35/45/55 SONY 32768-word x 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 8 P /S P are 26 2,14 4 bits high speed CMOS sta tic RAMs suitable fo r use in high speed and lo w power applications. Organized as 3 2 ,7 6 8 w o rds by 8 -b it, it operates from a