TI 511 TRANSISTOR Search Results

PC511

Abstract: OC22 PC512 BV 20100
Contextual Info: - 286 - LED-Transistor without Base Connection LED- 7 i 7 > !• • h ^ •-< — 7 - iffi-?- t i L raiS /E E '' 5 "j 13 c: - - i — T 7 / - Y |h 1 - K 1 + PC 511 SHARP O 2.0 , , M A X ~ * J _ ,ti S 16.2 + 0.2 ±'i t i M 1 0 .4 M A X —*j 4- *V - K

2N6665

Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
Contextual Info: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed

BF512

Abstract: BF510 marking code 513
Contextual Info: Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and

Contextual Info: BF510 to 513 _ / V _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the m iniature plastic envelope intended fo r applications up to the v.h.f, range in hybrid thick and th in -film circuits. Special

Contextual Info: • £.b53531 002MLi21 ?TD H A P X N AUER PHILIPS/DISCRETE BF510 to 513 b?E D J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo r applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special

24LC64P

Abstract: LTST-C170FKT C0805C104K5RAC7800 liteon keyboard GRM40X7R105K16PT GRM40X7R105K16 C0605 C0805 TPS2149 TPS77018DBVR
Contextual Info: USB Keyboard/Hub EVM Featuring the TPS2149 3.3ĆV LDO and Dual Switch User’s Guide September 2001 Mixed Signal Products SLVU050 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,

ZNR 361

Abstract: znr 431 ERZE11A361 znr 10 471
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

C1608X7R1H102KT

Abstract: C1608X5R1A105KT Display Power r7 resistor TPS65100 transistor K 603 C2012X5R0J475KT QFN-24 TDK lcd TPS65100EVM-030
Contextual Info: Application Report SLVU173 – June 2006 TFT LCD Display Power Supply Solutions Using the TPS65100 Triple Output Supply Sahana Chandra . PMP Portable Power ABSTRACT

Contextual Info: BF621 BF623 _ / V SILICON EPITAXIAL TRANSISTORS • For video output stages P-N-P transistors in a microminiature plastic envelope intended for application in class-B video output stages in colour television receivers. N-P-N complements are BF620 and BF622 respectively.

E10561

Abstract: E10391
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

Contextual Info: KSR1106 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=10Kii, R2=47Kii) • Complement to KSR2106 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

1545M

Contextual Info: h 7 > v 7* £ /Transistors 2SC1545M/2SC4017 Z5C 1545M A Q A ^ A J ^-u>h> ^ ^ Epitaxial Planar NPN Silicon Darlington Transistors Ü fÜ Î# iS ti/H ig h Gain Amp. * ^Jß-^-ÜEI/Dimensions (Unit : mm) 1) ? - ' ) > h > * £ * * ? * hFE T * 5 = hFE= 50000 (Typ.)

E11751

Abstract: E14471 E8471 E14431 E11271 E14201
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

znr 471 varistor

Abstract: ZNR 471 ZNR 391 znr3 varistor znr 431 znr 270 ZNR 241 varistor SEC 471 10 znr 621 varistor znr e 471
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

znr 14 k 201 varistor

Abstract: znr 14 k 221 varistor znr 10 k 621 varistor znr k 821 varistor znr k 201 varistor znr 14 k 361 varistor znr 20 k 391 varistor thyristor CSG2001-14A04 Znr 14 k 391 znr k 391 varistor
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

znr 14 k 361 varistor

Abstract: znr 14 k 221 varistor thyristor CSG2001-14A04 znr k 391 varistor znr 14 k 201 varistor znr 14 k 330 varistor znr k 201 varistor znr3 ZNR 471
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

thyristor CSG2001-14A04

Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

Contextual Info: DTB113ZK Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm • available in an S M T 3 (SMT, S C -59 ) packa ge • p a cka g e m arking: D T B 1 13ZK; G 1 1 • a built-in b ias resistor a llow s inverter circuit configuration without external

V7471U

Abstract: v7471 V7271U v14431u V7470 V9431 V10511U V10271 V14112U V10621U
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D V • Features ■ Recommended Applications ■ Applicable Standards ■ Handling Precautions and Minimum Quantity / ● Large withstanding surge current capability in compact

E8471

Abstract: E14201 E8621 E14391 E11471 ZNR E14112 E11102 E14361 E14431 znr 431
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

ZNR 471

Abstract: znr 431 ZNR 391 46 ERZV10D820 relay 3500 1210 241 ERZV14D621 ti8010 ZNR 361 znr 471 varistor TIM 500
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D V “ZNR” Transient/Surge Absorber, Series V, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.

ZNR V10471U

Abstract: znr varistor v10471u ZNR V10511U V7471U znr -v14471u V10511U V10471U V14471U V7271U V14241U
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D V • Features ■ Recommended Applications ● Large withstanding surge current capability in compact sizes ● Large “Energy Handling Capability” absorbing transient

Contextual Info: _ J v _ BDT61;61A BDT61B;61C SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. P-N-P complements are BDT60, 60A, 60B and 60C.

9005 triac

Abstract: ZNR2 znr3 varistor znr 431 E11911 ERZE11A znr 471 varistor ERZE11E E14201 znr panasonic
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.