smd transistor zl
Abstract: rf transistor mar 8 DRF1401 THN5601B
Contextual Info: THN5601B NPN SiGe RF POWER TRANSISTOR The THN5601B is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The THN5601B can be used as a driver device or an output device, depending on the specific application.
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thn5601bot-223900mhzmar-22-2005+5100nf100pfsmd transistor zlrf transistor mar 8drf1401
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R1401
Abstract: THN5601B
Contextual Info: THN5601B Semiconductor SiGe NPN Transistor □ Applications Unit in mm SOT-223 o VHF and UHF band medium power amplifier 6.5 3.0 4 □ Features 3.5 7.0 o 4.8 V operation o P1dB = 28 dBm at f = 900 MHz 1 o GP = 8.5 dB at f = 900 MHz 2 3 2.3 0.7 4.6 Pin Configuration
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transistor 2SC5066
Abstract: 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450
Contextual Info: Cross Reference RF Product Cross Reference Tachyonics THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z THN4201E THN4201KF THN4201U THN4301E THN4301KF THN4301U THN4501E THN4501KF THN4501U THN6201E THN6201KF THN6201S THN6201U
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thn5601bthn5702fthn6601bthn6701b+15thn405zthn420zthn450zthn520zthn620zthn640ztransistor 2sc50662sc50662sc5067bfp620upc27092sc5066 data sheet2sc5066 datasheetnesg260234bfp450
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R1401
Abstract: FR4 dielectric constant 4.6 THN5601B 1695 GP 1 JS 0746 gp 738
Contextual Info: THN5601B Semiconductor SiGe NPN Transistor □ Applications Unit in mm SOT-223 o VHF and UHF band medium power amplifier 6.5 3.0 4 □ Features 3.5 7.0 o 4.8 V operation o P1dB = 28 dBm at f = 900 MHz 1 o GP = 8.5 dB at f = 900 MHz 2 3 2.3 0.7 4.6 Pin Configuration
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thn5601bot-223thn5601r1401+4fr4 dielectric constant 4.61695 gp 1js 0746gp 738
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