THERMAL RESISTANCE VS. MOUNTING PAD AREA Search Results

Thermal Resistance vs. Mounting Pad Area

Abstract: TB377
Contextual Info: Thermal Resistance vs. Mounting Pad Area Technical Brief October 1999 TB377 Author: J. Wojslawowicz T JM – T A P DM = -Z θJA 300 RθJA = 103.2 - 24.3 250 Rθβ, RθJA (oC/W) The maximum rated junction temperature, TJM, and the

Contextual Info: interrii HUF76105SK8 D ata S h e e t M ay 1999 5.54, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

Contextual Info: HUF76113SK8 interrii Data Sheet O ctober 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

76105dk8

Abstract: AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

76105DK8

Abstract: AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

76105DK8

Abstract: AN9321 HUF76105DK8 HUF76105DK8T MS-012AA TB334
Contextual Info: HUF76105DK8 TM Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

76105DK8

Abstract: Dual N-Channel MOSFET SOP8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

76105DK8

Contextual Info: HUF76105DK8 S e m ic o n d u c to r October 1998 Data Sheet • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

n13 sot 23

Contextual Info: HUF76113T3ST Data Sheet June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

Contextual Info: HUF76132SK8 Semiconductor Data Sheet June 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

Contextual Info: HUF76121SK8 S em iconductor Data Sheet April 1999 • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

AN9321

Abstract: AN9322 HUFA75309T3ST TB334
Contextual Info: HUFA75309T3ST Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

Contextual Info: HUFA75309T3ST TM Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

HUFA76413DK8T

Contextual Info: HUFA76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy

AN7254

Abstract: AN9321 AN9322 HUFA75307T3ST TA75307 TB334
Contextual Info: HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET Features • 2.6A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

AN7254

Abstract: AN7260 AN9321 AN9322 HUF75307T3ST TA75307 TB334 3TC2 5307 FAIRCHILD
Contextual Info: HUF75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET Features • 2.6A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

3-Terminal Positive Voltage Regulators

Abstract: lm341 lm78m12ct H03A LM78M05CH LM78M12CH LM78M15CH LM78MXX
Contextual Info: LM341/LM78MXX Series 3-Terminal Positive Voltage Regulators General Description Features The LM341 and LM78MXX series of three-terminal positive voltage regulators employ built-in current limiting, thermal shutdown, and safe-operating area protection which makes

LM341 DATASHEET

Abstract: LM78M12CT 3-Terminal Positive Voltage Regulators LM341 TO-220 packing methods LM341-LM78M LM78M12 H03A LM341T-12 LM341T-15
Contextual Info: LM341/LM78MXX Series 3-Terminal Positive Voltage Regulators General Description Features The LM341 and LM78MXX series of three-terminal positive voltage regulators employ built-in current limiting, thermal shutdown, and safe-operating area protection which makes

3-Terminal Positive Voltage Regulators

Abstract: LM341 H03A LM341T-12 LM341T-15 LM78M05CH LM78M12CH LM78M15CH LM78MXX
Contextual Info: LM341/LM78MXX Series 3-Terminal Positive Voltage Regulators General Description Features The LM341 and LM78MXX series of three-terminal positive voltage regulators employ built-in current limiting, thermal shutdown, and safe-operating area protection which makes

AN7254

Abstract: AN9321 AN9322 HUF75309T3ST TB334
Contextual Info: HUF75309T3ST Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

Contextual Info: HUF75309T3ST Data Sheet June 1999 File Number 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

AN9322

Abstract: HUF75309T3ST TB334 AN7254 AN9321 75309
Contextual Info: HUF75309T3ST Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

Contextual Info: HUFA76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy