THEE Search Results

Contextual Info: OSSM SSMA High Frequency For 8oml-Rlgld Cablo Theee OSSM oonneoton operate from do to 40 QHz. The mating Interface la Identioaf to the popular OSSM atendard. The Internal deelqn haa been modified to eliminate the propagation of higher order modee below 40

ic shipping tray

Abstract: BG0505 epak shipping tray MSA-3032 msc 140 -10003 ePAK BG0505 ePAK tray drawing EPAK TRAY 309000
Contextual Info: REVISIONS REV i r 00 M a n u f a c t u r in g S ite M a rk in g T e x t p r o t r u s i o n 0.15max DESCRIPTION INITIAL RELEASE DATE APPROVED KK Thee 02/01/10 - 3 2 2 .6 ± 0 .5 L - 3 1 5 .0 ± 0 .5 ( A > 80-ND HDLES (VACUUM PICKUP CELL)

Contextual Info: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has

78xxC

Abstract: 7815C
Contextual Info: * THEEii-TEEHINAL POSITIVE VOLTAGE REGULATOR These voltage regulator are monolithic in­ tegrated circuits designed as fixed-voltage regulators for a wide variety of applications including local,on-card regulation. These re­ gulators employ internal current limiting,

D028

Abstract: simm-30 timing EDI8F3265C25MZI t1is 64KX32 D010 D021 I8F3265C25M jedec 64-pin simm
Contextual Info: ELECTRONIC DESIGNS INC 51E 1 • 323D11M Ü001058 Sfl7 H E L D EDI8F3265C T -V i -23-/y ^ E D*slD I Bectrofìlc gra Inc." High Speed Two Megabit SRAM Module 64KX32 Static RAM CMOS, High Speed Module Features TheEDI8F3265Cisahighspeed2megabit Static RAM module organized as 64Kx32. This module is constructed

Contextual Info: NIP-54021 Thee Dual Du Dua u a l Ports P 10GBASE-T 1 0G 10GBA 10G 0GBA GBA A SE-T ASE-T E-T -TT Network N Neet eetwork rkk Module Modul Mo od d u l e with wit ith h Intel In Intttel® elll® ® X540 X5 X 540 0 LAN LA L N Controller C Co ontrol o ntr on ntrolle r

Contextual Info: C 8-BIT PARITY THEE MTTL MC4000 series MC4008L,P* I ADVANCE INFORMATION/NEW PRODUCT This device consists of 9even Exclusive NOR gates con­ nected to check even parity. The o u tp u t will be in the logic " 1 " state as long as the " 1 " state is present on an even

78l05f

Abstract: 78L05L 78L08F 78L12F 78L06F 78lxx sot N78L05 N78L08 ksd 180 78L15L
Contextual Info: S SN78Lxxxx 3 Term minal Posittive Voltagee Regulatorr Semiconductor Deescription n httpp:// www.auk.co.kr Thee SN78Lxxx series s are threee-terminal possitive regulato ors providing oveer 150mA outp put current witth internal currrent limiting, thermal shutdown and saffe area protecttion. These reegulators are useful

Contextual Info: EDI8F321024C ^ E D I 11Q24KX32 SRAM Module EL£CTRüNICDE5lSN&INC 10mx32 Static RAM CHIOS, Hicfi Speed Module Features TheEDI8F321024C is a high speed 32 megabit Static RAM 1024Kx32 bit CMOS Static module organized as 1024K words by 32 bits. This module Random Access Memory

EDI8834C45MC

Abstract: EDI8834C-35 EDI8834
Contextual Info: ^EDI _ EDI8834C Electronic Detlgru Inc. High Speed Monolithic 256K Static RAM 32Kx8 Static RAM CMOS, Monolithic Features TheEDI8834C isa high perfomance, 262,144bitCMOS Static RAM organized as 32K by 8 bits. Combining high speed with low power, this device is ideal

EDI7F32256C100BAC

Contextual Info: W D EDI7F322S6C I El£CTRONC OE5N5NS INC TheEDI7F32256C, EDI7F232256C are organized as 256Kx 32and2 x 256Kx32 respectively. Both modules are based on ATMELAT29C020 -256Kx 8 Flashdevices iiTSOP packages which are mounted on an FR4 substrate. When deselected, the CMOS standby current is less than

DAEWON tray drawing

Abstract: TRAY 15X15 daewon tray daewon CABGA daewon msc1701 TRAY MPPO Package tray 15X15 DAEWON drawing MSA-3032
Contextual Info: REVISIONS REV 02 OBS D E S C R IP T IO N ADDED NEW PACKAGE - D A TE B C /B C G 196 & B F /B F G 2 8 9 OBSOLETE THE DRAWING CONVERTED TO P 7 - 2 4 6 - 0 0 0 A PPRO V ED 1 1 /0 1 / 0 7 0 5 /1 5 /0 9 KK Thee KK Thee 6 .3 5 S E E D E T A IL 'D ' !-»! o.go (H) I a T x W I

DWG-48

Contextual Info: REVISIONS REV 22 23 TUBE COLOUR: DESCRIPTION DATE 0 4 /1 5 /1 0 0 5 /0 1 /1 0 TO ALLOW TOP SIDE SURFACE PRINTING REMOVE QUARTER COLOR CODE APPROVED KK Thee KK Thee CLEAR PRINTING COLOUR: BLUE jy NOTES : UNLESS OTHERWISE SPECIFIED 1. ALL DIMENSIONS ARE INCHES, UNLESS OTHERWISE SPECIFIED.

msc1701

Abstract: P1072 Tube 8750
Contextual Info: REVISIONS REV 09 10 TUBE COLOUR: m DESCRIPTION TO INCLUDE YEAR CODE tc QUARTERLY COLOR PRINTING CHANGE BLUE COLOR TO GREEN COLOR FOR 1ST QUARTER DATE APPROVED KK Thee 01 / 2 4 / 0 9 0 5 /2 7 /0 9 KK Thee CLEAR DATE CODE: [Y Y ] Y Y= C a le n d e r Y e a r To Be P rin te d F ro m 2 0 1 0 O nw ard

Kostat tray

Abstract: Kostat kostat 6 x 6 Kostat KS-6120 KS-87063 Kostat tray 2 X 2.5 shipping tray MSC-4901 Kostat 87063 MSA-3032
Contextual Info: REVISIONS REV 02 03 D ESC RIP TIO N DATE CHANGE TO 140 deq C TRAY ADDED NEW PACKAGE - LG/LGG 64 APPROVED KK Thee KK Thee 03/28/08 05/20/09 7.62 6.35 DETAIL "F" V - œ i 4x2-R2.54 i T7- EEH 1 £ 7 0.76 - A - TRAY STACKING DETAIL LGA 9.0mm x 9.0mm KS - 87063

Contextual Info: SN N317xx [ 1.5 A Adju ustable Outtput ] Posittive Voltagee Regulatorr Semiconductor Deescription n httpp:// www.auk.co.kr Thee SN317 is an adjustable 3-tterminal posittive voltage reegulator capable of supply ying in excesss of 1.5 A overr an output vo oltage range off 1.2

SUP-P30H-EPR-4

Abstract: SUP-P15H-EPR SUP-P10H-EPR Faston FASTON screw 5A-20A SUP-P20H-EPR
Contextual Info: SUP-PH-EPR SERIES NOISE FILTER OKAYA M Features ,1 4 • Super high n material. 20~30dB attenuation at 10kHz, more than 25dB at 1.5kV puls • Thee terminal styles (Faston®, solder and screw). • Bleed resistor for electric shock protection. Safety Agency : Standard

TGS 880

Contextual Info: September 1996 Revision 1.0 DATA SHEET EOB2UV6482- 60/70 TG-S 16MByte (2M x 64) CMOS EDO DRAM Module - 3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 144-pins, small outline dual-in-line (SO DIMM) memory modules.

Contextual Info: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS

Contextual Info: ^ E D I B^ctronlc D««lgnc Inc. . Â IM IO I D iF O M Â T M Features TheEDI82136Cisa1,179,648bitAsynchroriousmemofy core with transparent address and enable latches in the advanced peripheral circuitry. This device is ideally suited for all x32 and x36 bit wide, high-performance memory sub­

Contextual Info: cP September 1996 Révision 1.0 ~ DATA SHEET - £ OB2U V6482- 60/70 TG-S 16MByte (2Mx 64) CMOS EDO DRAM Module - 3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized

Contextual Info: EDI816256CA-RP jl 256KxW Ruggedized Piasric Sfarle ff am 256KX16 Static RAM CMOS, Monolithic Features TheEDI816256CA is a mggedized plastic 256Kx16 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the

EDI444096C

Contextual Info: EDI444096C 4Megx4Fast Page DRAM 4 Megabitx 4DynamicRAM 5V, FastPage Features TheEDI444096C is a high performance, low power CMOS Dynamic RAM organized as 4 Megabit x 4. During READ and WRITE cycles each bit is addressed 4 Meg x 4 bit CMOS Dynamic through 22 address bits which are entered 11 at a time A0Random Access Memory

CABGA 8X8

Abstract: DAEWON tray drawing 12C-0808-E19 BFG 183 MSA-3032 daewon CABGA daewon tray E261 msc1701 daewon
Contextual Info: REVISIONS REV 00 01 DESCRIPTION IN IT IA L R ELEASE A DDED NEW PAC KA G E - — 6,35 DATE 0 1 /1 4 /0 5 APPROVED QUAN LUU 0 4 /2 2 /0 9 KK Thee B F /B F G 81 h0-l Q.gQ H I aTxWI — 7,62 -|Q.gQ(H)|A|Z(l 311.15- +0.25 -0.13 -1 3 2 .0 8 • +0.25 -0.13