TGA8399B Search Results
TGA8399B Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TGA8399B | TriQuint Semiconductor | 6-13 GHz Low Noise Amplifier | Original | 286.75KB | 4 | ||
| TGA8399B-EPU | TriQuint Semiconductor | 6-13 GHz Low Noise Amplifier | Original | 304.69KB | 6 | ||
| TGA8399B-EPU | TriQuint Semiconductor | 6-13 GHz Low Noise Amplifier | Original | 286.75KB | 4 | ||
| TGA8399B-SCC | TriQuint Semiconductor | Amplifier, 6-13GHz Low Noise Amplifier | Original | 216.19KB | 8 |
TGA8399B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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x band radar
Abstract: x-band mmic lna TGA8399B-SCC
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TGA8399B-SCC 20dBm TGA8399B-SCC 0007-inch x band radar x-band mmic lna | |
x band radar
Abstract: TGA8399B-SCC
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TGA8399B-SCC 20dBm 0007-inch x band radar TGA8399B-SCC | |
TGA8399B
Abstract: TGA8399C
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TGA8399B TGA8399C TGA8399B TGA8399C | |
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Contextual Info: Advance Product Information June 21, 2001 6-13 GHz Low Noise Amplifier TGA8399B-EPU Key Features and Performance • • • • • • • • Small Signal Gain dB Gain 26 -3 24 -6 22 -9 20 -12 Output RL 18 -15 16 -18 14 -21 12 • • Engineering Prototype Unit (EPU) |
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TGA8399B-EPU 20dBm 152mm 0007-inch | |
TGA8399B-EPUContextual Info: Advance Product Information August 30, 2001 6-13 GHz Low Noise Amplifier TGA8399B-EPU Key Features and Performance • • • • • • • • 28 Gain -3 24 -6 22 -9 20 -12 Output RL 18 -15 16 -18 14 -21 12 Primary Applications Return Loss dB 26 Small Signal Gain (dB) |
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TGA8399B-EPU 20dBm 152mm 0007-inch TGA8399B-EPU | |
triquint LNAContextual Info: TriQuint m Advance Product Information SEMICONDUCTOR \ 6-13 GHz Low Noise Amplifier Key Features and Performance 3 Stage LNA 0.25um pHEMT Technology 6-13 GHz Frequency Range 1.75 dB Typical Noise Figure Midband TGA8399B-EPU Primary Applications Point-to-Point Radio |
OCR Scan |
20dBm TGA8399B-EPU triquint LNA | |
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Contextual Info: TriQuirit <<Ê Advance Product Information BEMfWNDUGTQM» 6-13 GHz Low Noise Amplifier Key Features and Performance 3 Stage LNA 0.25um pHEMT Technology 6-13 GHz Frequency Range 1.75 dB Typical Noise Figure Midband TGA8399B-EPU Primary Applications Point-to-Point Radio |
OCR Scan |
20dBm TGA8399B-EPU | |
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Contextual Info: ThQuint^Ê SEMICONDUCTOR, \ Advance Product Information 6-13 GHz Low Noise Amplifier Key Features and Performance 3 Stage LNA 0.25um pHEMT Technology 6-13 GHz Frequency Range 1.75 dB Typical Noise Figure Midband 25 dB Nominal Gain High Input Power Handling: ~ 20dBm |
OCR Scan |
20dBm TGA8399B-EPU 100mm | |
Avago 9886
Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes
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com/peixun/antenna/116 //shop36920890 Avago 9886 XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes | |
TGA2517
Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
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cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125 | |
TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
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AsareavailableforkeybandsacrossDCto100GHz Alldevicesare100% 11GHzCut-OffFreq TGC1430F-EPU TGC1430G-EPU TGC4401-EPU TriQuintSemiconductor5/06 S11/S22 DC-20 DC-18 TGA2519-SG HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519 | |
TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
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TGA8399B-EPUContextual Info: Advance Product Information 6-13 GHz Low Noise Amplifier Key Features and Performance Primary Applications 3 Stage LNA 0.25um pHEMT Technology 6-13 GHz Frequency Range 1.75 dB Typical Noise Figure Midband 25 dB Nominal Gain High Input Power Handling: ~ 20dBm |
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20dBm 41mmess TGA8399B-EPU | |
TG2H214220-FL
Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
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TGA2517
Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
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Mil-Std-883 Wire Bond Pull Method 2011
Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
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