TG17 Search Results

Contextual Info: LPF 300W 2M 144 – 148 MHz LPF 300W 2M is a Low Pass Filter for use in 2M 144 – 148 MHz Ham radio equipment. Its design is optimised for use with our 150W en 300W pallet amplifiers and can be mounted on the same heat sink as the pallet. Only first class RF en Microwave components are used. TG170 silver plated PCB

2SD1360

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb d F | TG17S5D □ □ 0 7 cIE cì 4 DISCRETE/OPTO “ U 7 ' T-33-29 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.

PA6 MD40

Abstract: MD3311 31A-5250 RP32A md5811 SHEET04 RP32B RP20B rp19d PA11
Contextual Info: Text 1 2 3 4 5 6 D D REF200EM STPC INDUSTRIAL REFERENCE DESIGN REV 1.0 NOVEMBER 16 1998 C C DESIGN DESCRIPTION: FILENAME SHEET DESCRIPTION SHEET_02 SHEET_03 SHEET_01.SCH SHEET_02.SCH SHEET_03.SCH SHEET_04.SCH SHEET_05.SCH SHEET_06.SCH SHEET_07.SCH SHEET_08.SCH

Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86C923XB TMP86C923XB The information contained herein is subject to change without notice. 021023 _ D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

Contextual Info: 3214 SERIES □upi in BOX HEADER 1 .2 7 m m X 2 .54 m m 0.0 50 "X 0.1 00 " M aterial: Housing: 30% Glass filled PBT U L 9 4 V -0 . Contacts: Brass Plating: Gold plated: 5 /i' over 50/1' nickel. Tin plated: 1 5 0 /i’ over 7 0 ¡i nickel. Selective gold plated: S tandard gold

Contextual Info: 3 2 1 2 SERIES □upi in BOX HEADER WITH EJECTORS 1 .2 7 m m X 2 . 5 4 m m 0 . 0 5 0 " X 0 . 1 0 0 ,/ Material: Housing: 30% Glass filled PBT U L 9 4 V - 0 . C o n ta cts: Brass P lating: Gold plated: 5 ¡X over 5 0/T nickel. Tin plated: 150 ¡1' over 70 ¡1' nickel.

Contextual Info: □upt in 2143 SERIES P.C.B. SOCKET 2 .0 m m 0 .0 7 9 " Material: Housing: High t e m p e r a t u r e h o u s in g w ith s t a n d s IR and VPR s o ld e r in g m e th o d s . C ontacts: P h o s p h o r B ro n z e . Plating: Gold p la te d : 5 ¡1' o v e r 5 0 / /

cp clare reed relay

Abstract: ECG transistor replacement guide book free sip 1A05 12V 40W Fluorescent Lamp Driver circuit Diagram CP Clare Prme 15002 cp clare u prma 2a05 REED RELAY 15005 LSR2C05 CLARE REED RELAY PRMA 1a24 clare prme 15005
Contextual Info: SECTIONS CP Clare Company Overview 1 Product Selection Guide 2 Advanced Magnetic Products 3 Circuit Products 4 Reed Relay Products 5 Switch and Sensor Products 6 Surge Protection Products 7 Glossary 8 Index by Part Number 9 www.cpclare.com iii TABLE OF CONTENTS

8 ohm 0.25w SPEAKER

Abstract: cuckoo clock cuckoo MSS0306 TG16 TG17 TG32 8 ohm 0.25w buzzer 5100H
Contextual Info: MOSEL VITELIC MSS0306 3" VOICE ROM Features Single power supply can operate at 2.4V through 4.5V. Current output can drive 8 ohm speaker with a transistor. The voice content is stored up to 3.5 seconds 5100h and can be separated to 8 sections. Five trigger input pins are provided. Each trigger

d7250

Abstract: D-7250 1101A NZ34 Toshiba 726001 297131 SHENG iran
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ ^ 9097250 TOSHIBA D IS C R E T E /O P T O SEMICONDUCTOR DEI TDTTSSD □ OlbT'i 3 3 99D TOSHIBA F IE L D 16993 ^~T-Ll2 r3 S ' EFFEC T TRANSISTOR ARRAY S 3 5 1 4 TECHNICAL DATA S IL IC O N HIGH POWER SWITCHING A PPLIC A TIO N S. HAMMER D R IV E,

9v transformer

Abstract: HT84P00 the prayer holtek bar code EASY-64 voice activated switch project TG-13
Contextual Info: HT-EASY II User¢s Guide Copyright Ó1999 by HOLTEK SEMICONDUCTOR INC. All rights reserved. Printed in Taiwan. No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form by any means, electronic, mechanical photocopying, recording, or otherwise without the prior written permission of HOLTEK SEMICONDUCTOR INC.

555 7490 7447 7 segment LED display

Abstract: SN76670 SNF10 rsn 3404 rsn 3305 NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG mc2051 SN76131 SN76005 Ross Hill SCR Contactor
Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS

ph47

Abstract: TMP86C947XB pm47A
Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86C947XB TMP86C947XB The information contained herein is subject to change without notice. 021023 _ D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

X006

Abstract: MIL-T-10727 40 pin socket zip dip 40 pin socket zip
Contextual Info: ADAM TECH PRODUCTION SOCKETS . 070" [1 .7 8 ] SHRINK DIP SOCKET ADAM TECHNOLOGIES INC. ICS SERIES .300" ROW CENTERLINE ORDERING INFORMATION I S D I 28 ,400 [10.16] — SERIES INDICATOR ISD = Shrink Dip |C Socket i PLATING T = Tin Plating NO. OF POSITIONS 24, 28, 30

20AWG

Contextual Info: 4771 SERIES HOUSING 3.96m m 0.156" □upi in Material: Housing: Nylon 66 Flame r e ta r d a n t U L 9 4 V - 0 . Contacts: Brass. Terminal Plating: Tin plated. Recommend wire: 18AWG to 24AWG. Electrical C haracteristics: Insulator Resistance: 5000M 0 min. at DC 500V.

FZK101

Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001
Contextual Info: HANDBOOK OF INTESBATEI CIRCUITS in EQUIVALENTS AND SUBSTITUTES A lthough every care is taken with the preparation of this book, the publishers will not be responsible for any errors that might occur. I.S.B.N. 0 900162 35 X 1974 by Bernard B. Babani First Published 1974

tg72

Abstract: TG36 spark gap
Contextual Info: TG Two Electrode Legacy Series Spark Gaps Features • Tight DC breakdown voltage tolerance + 10% • Long-life tungsten or molybdenum electrodes • Rugged ceramic-to-metal or glass-to-metal construction Description High Energy Devices’ TG Legacy Series of two

RP13B

Abstract: STMicroelectronics datasheet LF33 DIP-SW6 MiniDIN RP24C header 20X2 TIL311 equivalent 31A-5250 datasheet of LF33 Philips MD4
Contextual Info: 1 2 3 4 6 5 D D EVAL200PC STPC INDUSTRIAL EVALUATION BOARD REV 0.3 OCTOBER 9 1998 C C FILENAME SHEET_02 SHEET_01.SCH COVER SHEET_02.SCH SIP 200 ISA SHEET_03.SCH DRAM 0,1,2,3 SHEET_04.SCH ROM BIOS SHEET_05.SCH PCI SLOTS SHEET_06.SCH ISA SLOTS, IRQ, DRQ, DACK MUX

Contextual Info: SILICON MONOLITHIC TOSHIBA C M O S DIGITAL INTEGRATED CIRCUIT TC7SET02F/FU TENTATIVE DATA UNDER DEVELOPMENT 2-INPUT NOR GATE The TC7SET02 is an advanced high speed C M O S 2-INPUT TC7SET02F NO R GATE fabricated with silicon gate C M O S technology. It achieves the high speed operation similar to equivalent

Contextual Info: TG Three Electrode Legacy Series Triggered Spark Gaps Features • Tight main static breakdown voltage tolerance + 10% • Long-life tungsten or molybdenum electrodes • Rugged ceramic-to-metal or glass-to-metal construction Description High Energy Devices’ TG Legacy Series of three

620 tg diode

Abstract: Triggered spark gap Triggered spark gap pulse width TG-170 TG-139 CP CLARE, 04-94 TG-72 spark gap spark gap switch TG-135
Contextual Info: HIGH ENERGY SPARK GAP DEVICES TG Legacy Series DESCRIPTION CP Clare’s TG Legacy Series of two electrode sparkgaps excel in applications that require the efficient transfer of high voltage, high energy pulses and DC overvoltage protection for magnetrons, diodes, capacitors, etc. The TG

TIL311 equivalent

Abstract: STMicroelectronics datasheet LF33 DIP-SW6 MiniDIN U36SD RP-44C 31A-5250 486 DX2 component datasheet of LF33 RP13B
Contextual Info: Text 1 2 3 4 6 5 D D REF200PC STPC INDUSTRIAL REFERENCE DESIGN REV 1.01 NOVEMBER 25 1998 C C DESIGN DESCRIPTION: FILENAME SHEET_01.SCH SHEET_02.SCH SHEET_03.SCH SHEET_04.SCH SHEET_05.SCH SHEET_06.SCH SHEET_07.SCH SHEET_08.SCH SHEET_09.SCH SHEET_10.SCH SHEET_11.SCH

250FZY6-D

Abstract: G12038HA2B-7P G12038HA g21070ha2 G8025HA2B g1750 G2206 G12038HA2S TG17055HA2B 300FZY6-D
Contextual Info: Вентиляторы для РЭА Вентиляторы переменного тока СИСТЕМА ОБОЗНАЧЕНИй G 80 25 1 2 3 1. Серия 2. Размер рамы, мм 3. Толщина корпуса, мм 4. Скорость вращения:

BS 551

Contextual Info: C o m p o un d Field Effect P o w e r T ran s is to r fiPA1640 i y j y 7 ^ H PA 1 640 i, 2 - IN P U T A N D ^ f - 4 /\° 7 ~ MOS FET 7 K 8 [ U S M iJ & N ? 1+ h Z ^ it Z M OS FET T K T 'T c t lE N A B L E iS ii^ - l/ T U 'S - r o 0 ^ - 7 °> K K O B l± > W * T #7 < - V - K ^ ^ ^ T ' - T c