T0220AB
Abstract: ScansUX66
Contextual Info: PHILIPS INTERNATIONAL 41E ]> P 711Dfl2ti G'QEmfl? £ ggPHIN r - 2 3 '0 7 _ Philips Com ponents BWS2E-100/150/200 Data sheet status Preliminary specification date o f issue January 1991 GENERAL DESCRIPTION Glass passivated, high efficiency, rugged dual epitaxial rectifier
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-f-23-07_0024nsbyv32e-100/150/200t0220ab+2t0220scansux66
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BYV32E
Abstract: T0220AB BYV42E-100
Contextual Info: MIE J> PHILIPS INTERNATIONAL B 711002b D D E H n S 4 B3 PHIN T-Z3-07 Philips Components Data sheet status Preliminary specification date o f issue January 1991 DISCRETE SEMICONDUCTORS SC02 G ENERA L DESCRIPTION c Glass passivated, high efficiency, rugged dual epitaxial rectifier
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711002bt-z3-07gg242d0byv42e-100/150/200+4t0220abt0220byv32ebyv42e-100
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BT152
Abstract: BT152 Series d8550a VSA060-I D8550 D8552 aa t 224 PHILIPS BT152-400R D8551 TG 56369
Contextual Info: bSE D P H I L I P S INTERNATIONAL • T llQ B E b OQtiSBßS H P H IN BT152 SERIES THYRISTORS Glass-passivated thyristors in TO—220AB envelopes, which are particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching. Applications
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bt152220abd8615abt152 series+8d8550avsa060-id8550d8552aa t 224philips bt152-400rd8551tg 56369
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m861
Abstract: BT150
Contextual Info: BT150 J V_ THYRISTORS Glass-passivated th y ris to r in T 0 -2 2 0 A B envelope, fea turin g sensitive gate triggering as low as 200 /uA. P articu la rly suitable in a p plication s w here high fatigue stresses due to the rm a l cyclin g and repeated
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bt150t0-220abo-220abm86-1241/re+1m861
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BT145-500R
Abstract: thyristor TAG 20 600 thyristor TAG 20 800 m2561 JS168 600R BT145 thyristor TAG 800
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • t.bS3T31 []CI272bß flflT ■ BT145 SERIES THYRISTORS Glass-passivated 25 ampere th y ris to rs intended fo r use in applications involving high fatigue stress due to therm al c yclin g and repeated sw itching. These th y ris to rs feature a high surge cu rre n t
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bs3t31ci272bbt145bt145-500r+7m2740thyristor tag 20 600thyristor tag 20 800m2561js168600rthyristor tag 800
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350
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sgm 8905
Abstract: 3302 81A ir 3302 81A alcan joint compound snapdragon AKO 546 687 burglar alarm system abstract walkie talkie circuit diagram ZENER DIODES DZ 8407 tea 1601 t
Contextual Info: December 19, 2000 Preface to the 13th Edition The Harmonized Tariff Schedule of the United States, Annotated for Statistical Reporting Purposes HTS 2001 is being published pursuant to section 1207 of the Omnibus Trade and Competitiveness Act of 1988 (P.L.
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\fr\fm\21ded1pfrm0221ded1sgm 8905+93302 81air 3302 81aalcan joint compoundsnapdragonako 546 687burglar alarm system abstractwalkie talkie circuit diagramzener diodes dz 8407tea 1601 t
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