TFSM PACKAGE Search Results

RJN1167

Abstract: KTK597TV 2SK3376TT 2SK2219 RJN1163 2SK3376 ktk596 TFSM KTK599TV KTK597E
Contextual Info: Outline Name TFSM ULP-4 VSM TVSM ESM USM TO-92M Size[§§] 0.8¡¿0.6¡¿0.38 1.0¡¿0.6¡¿0.37 1.2¡¿0.8¡¿0.5 1.2¡¿0.8¡¿0.32 1.6¡¿0.85¡¿0.7 2.0¡¿1.25¡¿0.9 4.3¡¿3.2¡¿2.4 Type No. High Gain IDSS §¸ Grade Max. Ratings V Supply (V) ISupply(§ )

Contextual Info: Product specification 1PS76SB10 SOD-323 Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Features Low forward volatge +0.1 2.6-0.1 1.0max Guard ring protected Very small plastic SMD package. 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25

SS369

Contextual Info: 1SS369 TOSHIBA TOSHIBA DIODE 1 SS3 69 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING • • • Small Package Low Forward Voltage Low Reverse Current : Vp 3 = 0.54V (TYP.) *T ti = * „ A ÍM A Y 1 0.8 ±0.1 n MAXIMUM RATINGS (Ta = 25°C)

1N6641

Contextual Info: 1N 6639 • 1N6639 thru 1N6641 AVAILABLE IN JAN, JANTX, JANTXV, AND JANS PER MIL-PRF-19500/609 1 N 6640 • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE 1N6641 • METALLURGY ALLY BONDED MAXIMUM RATINGS 0.056/0.075 & 1.42/1.« Operating Temperature: -65“C to +175°C

Contextual Info: CMBD4150 SILICON PLANAR EPITAXIAL HIGH SPEED DIODE Marking CMBD4150 * D18 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _ 3.0 2.8 0.48 ÏÏ3S 0.70 0.50 3 Pin configuration 1 = ANODE 2.6 1.4 1.2 2.4 2 = NC J 3 = CATHODE IM -14 “ W .002 1.02 _ 5.89 0.60 2.00

YG911S2R

Abstract: IF-10A
Contextual Info: tf —K / Rectifier Diodes • I S l i ^ ^ if iii 5?"-f —K Low-Loss Fast. Recovery Diodes LLDi 1 in one-package MX Device type ERA91-02 ERB91-02 CB903-4 ERA92-02 SC902-2 ERB93-02 ERC91-02 KS926S2 ERC90-02 YG911S2R YG911S3R YG912S2R YG912S6R TS912S6R M i l « M B + C ft

diode smd marking S0

Abstract: 1PS76SB10 SMD transistor Marking rw TE smd TFSM smd marking LE smd ic marking te smd diode S0
Contextual Info: Diodes SMD Type Schottky barrier diode 1PS76SB10 SOD-323 Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Features Low forward volatge +0.1 2.6-0.1 1.0max Guard ring protected Very small plastic SMD package. 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25

KTA2013F

Abstract: tfsm package TFSM
Contextual Info: SEMICONDUCTOR KTA2013F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. 3 K ・Thin Fine Pitch Small Package.

TFSM

Contextual Info: SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. 3 K ・Thin Fine Pitch Small Package.

Contextual Info: TOSHIBA 3000HXD22 TOSHIBA ALLOY-FREE RECTIFIER 3 n n n n Y n 3 ? RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage : Vr r m —5000V • • • T V , , A T7-X — Q rtH A A -r ^ v ; —- - - - - Flat Package MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING

Contextual Info: TOSHIBA 1SS388 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 s S 3 88 HIGH SPEED SWITCHING APPLICATION U nit in mm • Small Package • Low Forward Voltage : VF 3 = 0.54V (Typ.) • Low Reverse Current : I r = 5/./Á (Typ.) MAXIMUM RATINGS (Ta = 25°C)

KTC4074F

Contextual Info: SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. D 3 K ・Thin Fine Pitch Small Package.

tfsm package

Abstract: MBR1645 SBR1645-T254
Contextual Info: SEME SBR1645-T254 LAB MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139)

Contextual Info: , Lt na. SBR1645-T254 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) 3.53(0.139) 3.78(0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 727 (0.050) a S.KS 000 1 2 DUAL SCHOTTKY BARRIER RECTIFIER

G30100C

Contextual Info: m RHRG3070CC, RHRG3080CC, RHRG3090CC, RHRG30100CC HARRIS 30A, 700V - 1000V Hyperfast Dual Diodes April 1995 Features Package JEDEC STYLE TO-247 • Hyperfast with Soft R eco very.<65ns • Operating Temperature . . . +175 C

TFSM

Abstract: 1ss3 1SS352
Contextual Info: 1SS352 TOSHIBA 1 SS352 T O S H IB A D IO D E SILICO N EPITA X IA L PLA N A R TYPE Unit in mm ULTRA H IG H SPEED S W IT C H IN G A P P L IC A T IO N . • • • • Small Package Low Forward Voltage VF 3 = 0.98V (Typ.) Fast Reverse Recovery Time trr—l-6ns (Typ.)

Contextual Info: S EM E SBR1645-T254 LA B MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139)

KRC158F

Abstract: parts equivalent KRC157F
Contextual Info: SEMICONDUCTOR KRC157F-KRC159F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SW IT C H IN G APPLICATION. INTERFA CE C IRCUIT A N D DRIVER CIR CUIT APPLICATION. FE A T U R E S • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.

ui02

Abstract: mig10Q vero GK 60
Contextual Info: TOSHIBA MIG10Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 30 10A/1200V IGBT

Contextual Info: SEM ICONDUCTOR KTA2013F TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R G E N E R A L PUR PO SE A PPLICATION. SW ITC H IN G APPLICATIO N. FEA T U RE S • Excellent h FE Linearity : h FE 0.1m A /hFE(2mA)=0.95(Typ.). • High h FE : h FE—l20~400. • Complementary to KTC4074F.

Contextual Info: ADE-208-156B<Z HRW26F Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features Rev. 2 Nov. 1994 Pin Arrangement • Low forward voltage drop. VF=0.55V max) • High reverse voltage. (VR=40V max) • Full molded fin enables easy insulation from

FI 2453

Abstract: Daico Industries DS0049
Contextual Info: DAICÔ INDUSTRIES 2ÔE INC D >• 0001422 . . S HDAI . J-5 M 1 NC GND NO CONTCONT NO GND NC DS0049 SP2T DUAL SWITCH • 10-400 MHz • 5 mA, +5 VDC . FAST SWITCHING SPEED BY BEA D OF CONTRASTING COLOR OPERATING CHARACTERISTICS PARAMETER CURRENT DRAIN

Contextual Info: DA IC O I N D U S T R I E S INC 2 ^ 04^20 . >• 0001422 . ._ . . . S _•. . DAI 3BE D r-5 1 -n NC A GND NO CONTCONT NO GND A GND B NC B DS0049 SP2T DUAL SWITCH • 10-400 MHz • 5 mA, +5 VDC • FAST SWITCHING SPEED CONTRASTING COLOR OPERATINGCHARACTERISTICS

diagram LG LCD TV circuits

Abstract: schematic LG TV lcd backlight inverter schematic LG lcd backlight inverter schematic diagram inverter 12v to 24v 30a lg lcd tv POWER SUPPLY SCHEMATIC lg led tv internal parts block diagram diagram power supply LG 32 in LCD TV circuits KIA78033F regulator KIA78 ic philips lcd tv inverter schematic
Contextual Info: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For LCD TV / Monitor http://www.keccorp.com Sales Engineering G 2006. 04. REV 3.31 First & Best KEC Products Line up for LCD TV & MNT IC’s Discrete Transistor G/P Transistor Power Regulator Management