TF 431 Search Results

Contextual Info: Ordering number : EN5126 ._ 2SC5238 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F eatures • High speed tf = 100ns typ . • High breakdown voltage (Vcbo = 1500V).

Ultrafast Photodetectors GmbH

Abstract: G7096-03
Contextual Info: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response *1 G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps*1(Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)

G4176-03

Abstract: MSM photodetector G417603 Ultrafast Photodetectors GMbh GaAs MSM G4176 G4176-01 G7096 G7096-01 photodetectors
Contextual Info: PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)

Contextual Info: THICK FILM SURFACE MOUNT NETWORKS RESISTORS •CAPSSCOLS ♦D E U tf LINES SMN SERIES FEATURES □ Standard small outline packages sizes, 14* or 16 Pin. □ Choice of gull-wing or J-lead. □ Epoxy-molded for improved durability and environmental performance.

Contextual Info: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs Ultrafast response of several tens picosecond FEATURES Ultrafast response *1 tr , tf = 30 ps (Typ.) Low dark current 100 pA (Ta=25 °C) Large photosensitive area 200 mm *1: Values excluding response time of light source, bias tee, assembly circuit,

Contextual Info: MITSUBISHI DIGITAL ASSP M66700P/WP DUAL HIGH-SPEED CCD CLOCK DRIVER FEATURES • Output logic amplitude: 12V • High-speed rise/fall time tr = tf = 33ns (typical) Cl = 1000pF • High output “H” level voltage: (Vcc - 1) V minimum • Low output “L” level voltage: 0.5V maximum

UI132

Abstract: 2SC4425
Contextual Info: Ordering n u m b e r:EN 2848 _ 2 S C 4 4 2 5 NPN Triple Diffused Planar Silicon Transistor Sw itching R egulator A pplications F eatures . High breakdown voltage, high reliability • Fast switching speed tf: 0.1 ps typ • WideASO • Adoption of MBIT process

Contextual Info: ß R lIÜ M M tf In te l 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Flash Electrical Chip Erase — 2 Second Typical Chip Erase Quick-Pulse Programming Algorithm — 10 ¡xs Typical Byte Program — 4 Second Chip Program 100K Erase/Program Cycles Typical

2222 031 capacitor philips

Abstract: TRANSISTOR 43IL 271 Ceramic Disc Capacitors BLF348 015 capacitor philips 2222 032 capacitor MKT Philips VCB228 Philips 2222 capacitor 2222 035 electrolytic capacitor
Contextual Info: P hilips Sem iconductors VHF linear push-pull power MOS transistor PH ILIPS T - tf- lZ INTERNATIONAL 5bE D 711 005b BLF348 D0M3RD3 031 H P H I N PIN CONFIGURATIO N FE A T U R E S • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

MG100J2YS1

Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG100J2YS1 HIGH P O W E R S W I T C H I N G APPLICATIONS, M O T O R CONT R O L APPLICATIONS. . High Input Impedance . High Speed : tf=0.35;is Max. trr=0.25ns(Max.) . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode

t51q

Contextual Info: <g MOTOROLA Military 10506 Triple 4-3-3 Input NOR Gate ELECTRICALLY TESTED PER: MIL-M-38510/06004 HP0 unni The 10506 is a triple 4-3-3 input NOR gate. • 35 mW Max/Gate No Load) • tp(j = 2.8 ns typ • tr, tf = 2.0 ns typ (20% - 80%) AVAILABLE AS PIN ASSIGNMENTS

MT03P

Contextual Info: H igh V o lta g e • H igh S p e ed S w itc h in g T ra n s is to rs HDT series Bipolartransistors NPN Parts No. Absolute Maximum Ratings Electrical Characteristics V c eo hFE V CE V be (sat) (sat) (max) (m ax) [V] [V] 0jc fT ton ts tf (m ax) (max) (max)

transistor tt 2222

Abstract: C7f TRANSISTOR BLY92C BLY92C/01 BLY92
Contextual Info: Philips Semiconductors b b S 3 T 3 1 Q 0 2 tì 7 4 0 CHT • A P X ^ u c ^ p e c m c a tfó n BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE b*lE » PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

Contextual Info: M M O T O R O LA Military 10503 Quad 2-Input OR Gate ELECTRICALLY TESTED PER: MPG 10503 The 10503 is a quad 2 input OR gate. The 10503 provides one gate with OR/NOR outputs. • 40 mW Max/Gate (No Load) M P 0 u if iir • tpd = 2.0 ns typ • tr, tf = 2.0 ns typ (20% - 80%)

G4176-03

Abstract: G7096-03 G417603 G4176 G7096 LPRD1022J03
Contextual Info: PRELIMINARY DATA 超高速MSMフォトディテクタ G4176シリーズ（GaAs） G7096シリーズ（InGaAs） 超高速応答を実現した受光素子 •特長 ●超高速応答 G4176-03 : tr , tf = 30 ps（Typ.） G7096-03 : tr = 40 ps（Typ.）

E10505

Contextual Info: M M O T O R O L A Military 10505 Triple 2-3-2 OR/NOR Gate ELECTRICALLY TESTED PER: MIL-M-38510/06003 MPO UHM Th e 10505 is a triple 2-3-2 input OR/NOR gate. • 35 mW Max/Gate (No Load) • tpcj = 2.0 ns typ • tr, tf = 2.0 ns typ (20% - 80% ) A V A ILA B LE A S

BP75N

Abstract: 7MBP75NA060-01 onsi
Contextual Info: •B±%ìm-j.-zfa5i? h tr= = Fuji New Semiconductor Products _ , v . i [ ± IG B T - IP M N V U — X • ♦ ■ 600V/75A/7tfófi 7M B P 75NA 060-01 Jt Features 7 h 7. -f 7 7 -pte-tf— v • & S < X '- Z M & lm # ; * r h la il't i ■ Low sw itch in g -su rg e and noise

MIP2

Abstract: MIP16 MIP805
Contextual Info: Intelligent Power Devices IPDs MIP805 Silicon MOS IC • Features unit: mm 0.25±0.1 Part A M Di ain sc te on na tin nc ue e/ d 12° ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g

LX431B

Abstract: LX431C LX431
Contextual Info: - 266 - • CR.BOX a m & iS fë Ta =25*C ^ # L X 4 3 1 B, L X 4 3 1 C Vcc (x u V ^ ( r a = 25’C) 14 * ÜL le VccfV) iftl 5e ft ft 5e ft 'I' « * Vcc n 12 — + 1 8 V V,d + 300 V fr Vi V Pd Icc 2X 105 -15 - 5 ±10 Vo '] 1 »J 5Ë $ h ft & m tf. m 5e m te

Contextual Info: 超高速MSMフォトディテクタ G4176シリーズ（GaAs） 超高速応答を実現した受光素子 •特長 ●超高速応答 *1 tr , tf = 30 ps（Typ.） ●低暗電流 100 pA Ta=25 ℃ ●大受光面積 200 mm□

ED6A

Abstract: e91e ed9b E17A ed9a E5AF E2AF ea93 TOSHIBA ADDC ed4b
Contextual Info: TOSHIBA TLCS-870 V g y T 'tì, TLCS-870 > V - X f£JS Sii & f i ^ Ko TlEÎÈ L X t o 1 . 8.1 1 LD A, (x) ^ í y ^ fj Í0 8 H' -7 > t “ ÿ CDU - K l (ì-tf n T-x > ü fg ^ á b f) Í - t 0 f!l x. tì\ i co LD A, (x) ti, x #±Ü1îO^ -Ç V b ~r ^ K$%❖ jitf b b %

Contextual Info: t ' tT IC AN306 AN 306 VTR * 7 I IS APC mn/VTR Color APC Circuit ^/D escription AN 306 l i , VTR <r>ij y — APC E1S# ¿ l T t ä l t ? tl fWHÜ&T-fo I ^ iS /F e a tu re s • s i , ti 7 — n É tt-y tf& z .fr ñ íñ 'é • a p c ias&<7 3f ^ i) r x t s M i S i ^ w

LM 4138

Abstract: HL 482 RAM 4163 cd 4162 GFIJ c 4161
Contextual Info: TO SH IB A TLCS-870/X V 3 y - t r í i , TLCS-870/X v V - X 1.10.1 t< flJ g S íift'íív ^ c o v i-c ia ili L T $¿3S/3£Í& B n ^ 1 LD A, (x) ^ í y ^ fj Í08H' -7 > t “ #±Ü liO ^ ï 'J fi-tf n f X h ÿ (?) n — ^ K$% ❖ j i t f b b %> f) t “ -tfn T-x M l f g H Í -9 i ¿ H i <0,

nec 7815

Abstract: transistor NEC D 986 ic LC 7815 6111 WA NEC D 986 2SA1847 ic 7815 M/NEC 7815
Contextual Info: ~7~ — $ y • — h ÿ i j n > / \° 7 - S ilic o n P o w e r T r a n s is t o r 2SA1847 P N P X f $ * y T JU M y y ^ 2SA1847&, > h 7 > y ' X ^ h-7>v^^TföVcE(sat ThFE^' t'<7)TDC/DC=]>/\'U T U íS T -T o 7 i / T ) \ s T - £ > 7 m & T & t o n m * :ñ im t i: ''S v 'r - ;yr*¡ti>v, n £ i = i *