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Contextual Info: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 Single chip IC of protection function circuit
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MIP108
Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: Panasonic Intelligent Pow er Devices IPDs MIP108 Silicon MOS IC I Features Single chip IC with power MOS FET and CMOS control circuit Power MOS FET with high breakdown voltage and low input capaci tance PWM control of high speed operation Single chip IC of protection circuit
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MIP9E01
Abstract: mip10 Matsua & SAW & IF matsua saw MIP108 4.5V TO 100V INPUT REGULATOR
Contextual Info: MIP108 Intelligent Power Devices IPDs MIP108 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 1.27 Single chip IC of protection circuit
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mip108mip10mip811/812mip11+8mip814/815/816mip803/804/806mip82mip805mip9e01matsua & saw & ifmatsua saw4.5v to 100v input regulator
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Matsua de
Abstract: MIP9E01 4.5V TO 100V INPUT REGULATOR
Contextual Info: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 ● Single chip IC of protection function circuit
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12v car battery charger wiring diagram
Abstract: MIP108 MIP55 MIP16
Contextual Info: MIP108 Intelligent Power Devices IPDs MIP108 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) Single chip IC of protection circuit
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MIP9E
Abstract: MIP55 "Intelligent Power Devices" MIP803 MIP102 MIP16 Panasoni
Contextual Info: MIP102 Intelligent Power Devices IPDs MIP102 For CMOS Type Switching Power Control Unit : mm ● Single chip IC with control circuit and output power MOS FET ● Various protective functions built-in : over-current/over-heat protec- 0.45 • Features 1 28
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12v car battery charger wiring diagram
Abstract: MIP2 MIP106 EL Lamp 10W MIP9E MIP16 MIP02
Contextual Info: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) PWM control of high speed operation
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Vin100V
Abstract: 4.5V to 100v input regulator
Contextual Info: Intelligent Power Devices IPDs MIP109 Silicon MOS IC I Features Single chip IC with power MOS FET and CMOS control circuit Power MOS FET with high breakdown voltage and low input capaci tance PWM control of high speed operation Single chip IC of protection circuit
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mip109vin100v4.5v to 100v input regulator |
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panasonic SH-D
Abstract: Panasonic saw
Contextual Info: Panasonic Intelligent Pow er Devices IPDs MIP102 For CMOS Type Switching Power Control Unit : mm • Features • Single chip IC with control circuit and output power MOS FET • Various protective functions built-in : over-current/over-heat protec tive function
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mip102110vac28-leadop028-p-0375a+2panasonic sh-dpanasonic saw
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MIP106
Abstract: 8 pin 12v charger ic 4.5v to 100v input regulator
Contextual Info: Panasonic Intelligent Pow er Devices IPDs MIP106 Silicon MOS IC I Features Single chip IC with power MOS FET and CMOS control circuit Power MOS FET with high breakdown voltage and low input capaci tance PWM control of high speed operation Single chip IC of protection function circuit
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mip10635bon8 pin 12v charger ic4.5v to 100v input regulator |
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Matsua & SAW & IF
Contextual Info: MIP102 Intelligent Power Devices IPDs MIP102 For CMOS Type Switching Power Control Unit : mm ● Single chip IC with control circuit and output power MOS FET ● Various protective functions built-in : over-current/over-heat protec- 0.45 • Features 1 28
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lexan 121r
Abstract: MIP10-4112-3 SS2343 ABB pressure gauge 121R bourdon SE147 4117-4 ABB pressure
Contextual Info: MIP10 Pressure gauge class 1.0 – 100% Features to European standard EN 837-1:1998 • According Accuracy class 1.0. • 100% working area at stable working pressure. • Alternative measurement system – covers several measu• rement media in practical operations.
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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mip2f2
Abstract: power supply LED 3w mip2f2 MIP2F2 IC mip2f mip2fx IC301 MIP2C2 MIP2C2 MIP2F2 power supply mip2f2 MIP022X
Contextual Info: IPD Product Selection Guide October 1, 2008 Semiconductor Company, Panasonic Corporation Precautions on the Sales of IPDs 1 The sale and/or the export of IPD products to any customer or customers located in any country other than Japan is expressly prohibited by the Agreement made and executed by and between Power Integrations, Inc. and Panasonic Corporation.
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MIP9E01
Abstract: MIP9E02 MIP709 ipd mip2 ipd mip4
Contextual Info: Intelligent Power Devices IPDs MIP704 Silicon MOS IC • Features ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply
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MIP417MD
Abstract: TO-220IPD7-A2 mip41 MIP16
Contextual Info: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features Package Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.
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MIP9E01
Abstract: MIP9E02 MIP805 MIP709
Contextual Info: Intelligent Power Devices IPDs MIP705 Silicon MOS IC Unit: mm • Applications • For automotive electric equipment (relay or solenoid driver) 0.5±0.1 0.8 max. 1.8±0.1 2.5±0.1 7.3±0.1 • 3-pin intelligent power device • Five protective functions (over-current, over-voltage, load-shorting, over heat, ESD) built-in
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MIP9E01
Abstract: MIP0122SY MIP9E02 TO-220-A1 MIP0123SY MIP0125SY MIP816 MIP0123 matsua CHARGER ipd mip2
Contextual Info: Intelligent Power Devices IPDs MIP0122SY, MIP0123SY, MIP0124SY, MIP0125SY Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.
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MIP9E01
Abstract: MIP9E02 MIP9E ipd mip2 ipd mip4
Contextual Info: Intelligent Power Devices IPDs MIP504 Silicon MOS IC • Features unit: mm ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply
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mip160
Abstract: MIP162 mip163 MIP164 MIP166 MIP2 MIP165 mip*163 MIP9E
Contextual Info: Intelligent Power Devices IPDs MIP160, MIP162, MIP163, MIP164, MIP165, MIP166 Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V)
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MIP2
Abstract: MIP16 MIP805
Contextual Info: Intelligent Power Devices IPDs MIP805 Silicon MOS IC • Features unit: mm 0.25±0.1 Part A M Di ain sc te on na tin nc ue e/ d 12° ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g
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block diagram esd protection
Abstract: MIP9E MIP02 MIP2 MIP3 mip506 MIP814 MIP16 MIP2 panasonic MIP9
Contextual Info: Intelligent Power Devices IPDs MIP506 Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated
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mip0210
Abstract: MIP0210SP MIP16 japanese fet regulator ic st mip4
Contextual Info: Intelligent Power Devices IPDs MIP0210SP Silicon MOS IC • Features M Di ain sc te on na tin nc ue e/ d ● Switching power supply (to 7W) ● AC adaptor ● Battery charger 8 2 7 3 6 4 5 6.3±0.2 7.62±0.25 Symbol Drain voltage VD Control voltage VC Output current
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MIP16
Abstract: mip02 MIP2 MIP501 MIP502 MIP55
Contextual Info: MIP501, MIP502 Intelligent Power Devices IPDs MIP501, MIP502 Silicon MOS IC MIP501 (V DSS > 40V Ron < 0.5Ω) Over-current-protection function built-in 4.5±0.2 0.65±0.1 0.85±0.1 Direct drive possible by the logic circuit • Applications ● 0.65±0.1
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