MIP16 Search Results

mip160

Abstract: MIP162 mip163 MIP164 MIP166 MIP2 MIP165 mip*163 MIP9E
Contextual Info: Intelligent Power Devices IPDs MIP160, MIP162, MIP163, MIP164, MIP165, MIP166 Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V)

MIP161

Abstract: 18 PIN IC for power supply 274V IC TA 731 intelligent battery charger circuit diagram
Contextual Info: Intelligent Power Devices IPDs MIP161 Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V) ● An over voltage protection circuit for the secondary side, a pulseby-pulse overcurrent protection circuit and a timer auto-restart circuit are integrated.

mip* 282

Abstract: MIP160 MIP164 mip163 REGULATOR IC 371 mip*163
Contextual Info: Intelligent Power Devices IPDs MIP160, MIP162, MIP163, MIP164, MIP165, MIP166 Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V)

Contextual Info: Panasonic Intelligent Power Devices IPDs MIP160, MIP162. MIP163. MIP164. MIP165. MIP166 Silicon MOS IC • Features • Single chip IC with high breakdown voltage power MOS FET and CMOS control circuit • Worldwide input (85 to 274VAC) possible • Over-voltage protection at secondary section, pulse by pulse over­

MIP9E01

Abstract: MIP9E02 MIP161 ipd mip4
Contextual Info: Intelligent Power Devices IPDs MIP161 Silicon MOS IC • Features unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 1.0±0.1 0.1±0.05 0.93±0.1 0.8max 2.5±0.1 ■ Applications ● Switching power supply (to 5W) ● AC adaptor ● Battery charger 0.5±0.1 1.8±0.1 7.3±0.1

MIP161

Abstract: PULSE MODE CURRENT SOURCE IC
Contextual Info: Panasonic Intelligent Pow er Devices IPDs MIP161 Silicon MOS 1C U nit : mm • Features • Single chip IC with high breakdown voltage power MOS FET and CMOS control circuit • Worldwide input (85 to 274VAC) possible • Over-voltage protection at secondary section, pulse by pulse over­

MIP161

Abstract: MIP16 mip161 application MIP18 mip3
Contextual Info: Intelligent Power Devices IPDs MIP161 Silicon MOS IC • Features unit: mm M Di ain sc te on na tin nc ue e/ d ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V) ● An over voltage protection circuit for the secondary side, a pulseby-pulse overcurrent protection circuit and a timer auto-restart circuit are integrated.

MIP160

Abstract: voltage regulator PIN diagram
Contextual Info: Panasonic Intelligent Pow er Devices IPDs MIP160, MIP162, MIP163. MIP164, MIP165, MIP166 Silicon MOS IC I Features Single chip IC with high breakdown voltage power MOS FET and CMOS control circuit Worldwide input (85 to 274VAC) possible Over-voltage protection at secondary section, pulse by pulse over­

MIP163

Abstract: MIP164 MIP160 MIP162 MIP165 MIP166 PULSE MODE CURRENT SOURCE IC Intelligent Power Devices
Contextual Info: Panasonic Intelligent Power D e v ice s IPDs MIP160, MIP162. MIP163. MIP164. MIP165. MIP166 Silicon M OS IC U n it : m m I Features Single chip IC with high breakdown voltage power MOS FET and CMOS control circuit Worldwide input (85 to 274VAC) possible

MIP161

Contextual Info: Panasonic Intelligent Power Devices IPDs MIP161 Silicon MOS 1C Unit : mm • Features • Single chip IC with high breakdown voltage power MOS FET and CMOS control circuit • Worldwide input (85 to 274VAC) possible • Over-voltage protection at secondary section, pulse by pulse over­

MIP160

Abstract: MIP163 mip164 MIP165 MIP162 PULSE MODE CURRENT SOURCE IC 10A Switching Regulator "Intelligent Power Devices" 003111 MIP16
Contextual Info: Panasonic Intelligent Power D e v ice s IPDs MIP160, MIP162. MIP163. MIP164. MIP165. MIP166 Silicon M OS IC U n it : m m I Features Single chip IC with high breakdown voltage power MOS FET and CMOS control circuit Worldwide input (85 to 274VAC) possible

MIP161

Abstract: PULSE MODE CURRENT SOURCE IC "Intelligent Power Devices" 18 PIN IC for power supply
Contextual Info: Panasonic In telligent Power D e v ic e s IPDs MIP161 Silicon MOS 1C Unit : mm • Features • Single chip IC with high breakdown voltage power MOS FET and CMOS control circuit • Worldwide input (85 to 274VAC) possible • Over-voltage protection at secondary section, pulse by pulse over­

MIP165

Abstract: MIP164 MIP163 IPD Industrial Products MIP9E01 MIP2
Contextual Info: Intelligent Power Devices IPDs MIP160, MIP162, MIP163, MIP164, MIP165, MIP166 Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

mip2f2

Abstract: power supply LED 3w mip2f2 MIP2F2 IC mip2f mip2fx IC301 MIP2C2 MIP2C2 MIP2F2 power supply mip2f2 MIP022X
Contextual Info: IPD Product Selection Guide October 1, 2008 Semiconductor Company, Panasonic Corporation Precautions on the Sales of IPDs 1 The sale and/or the export of IPD products to any customer or customers located in any country other than Japan is expressly prohibited by the Agreement made and executed by and between Power Integrations, Inc. and Panasonic Corporation.

MIP414

Abstract: MIP414MD
Contextual Info: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.

MIP9E01

Abstract: MIP9E02 MIP709 ipd mip2 ipd mip4
Contextual Info: Intelligent Power Devices IPDs MIP704 Silicon MOS IC • Features ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply

MIP9E01

Abstract: mip10 Matsua & SAW & IF matsua saw MIP108 4.5V TO 100V INPUT REGULATOR
Contextual Info: MIP108 Intelligent Power Devices IPDs MIP108 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 1.27 Single chip IC of protection circuit

MIP417MD

Abstract: TO-220IPD7-A2 mip41 MIP16
Contextual Info: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.

Matsua de

Abstract: MIP9E01 4.5V TO 100V INPUT REGULATOR
Contextual Info: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 ● Single chip IC of protection function circuit

MIP9E01

Abstract: MIP9E02 MIP805 MIP709
Contextual Info: Intelligent Power Devices IPDs MIP705 Silicon MOS IC Unit: mm • Applications • For automotive electric equipment (relay or solenoid driver) 0.5±0.1 0.8 max. 1.8±0.1 2.5±0.1 7.3±0.1 • 3-pin intelligent power device • Five protective functions (over-current, over-voltage, load-shorting, over heat, ESD) built-in

MIP9E01

Abstract: MIP0122SY MIP9E02 TO-220-A1 MIP0123SY MIP0125SY MIP816 MIP0123 matsua CHARGER ipd mip2
Contextual Info: Intelligent Power Devices IPDs MIP0122SY, MIP0123SY, MIP0124SY, MIP0125SY Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.

MIP9E01

Abstract: MIP9E02 MIP9E ipd mip2 ipd mip4
Contextual Info: Intelligent Power Devices IPDs MIP504 Silicon MOS IC • Features unit: mm ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply

MIP2

Abstract: MIP16 MIP805
Contextual Info: Intelligent Power Devices IPDs MIP805 Silicon MOS IC • Features unit: mm 0.25±0.1 Part A M Di ain sc te on na tin nc ue e/ d 12° ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g