TF 3333 Search Results

Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG4000GXH26G DATA LOW SNUBBER TYPE SG4000GXH26G Unit in mm INVERTER APPLICATION Repetitive Peak off-state Voltage V d RM = 4500V (Note 1) R.M.S On-State Current IT (RMS) = 1200A (Tf = 76°C)

Contextual Info: TOSHIBA MG100Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 00Q2YS51 HIGH POWER SWITCHING APPLICATIONS M O TOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= O .Z /u s Max. ( Inductive Load Low Saturation Voltage : VCE (sat) =3.6V (Max.)

Contextual Info: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

74AHC1GU04

Abstract: 74AHC1GU04GW
Contextual Info: INTEGRATED CIRCUITS DATA SHEET 74AHC1GU04 Inverter Product specification File under Integrated Circuits, IC06 1999 May 19 Philips Semiconductors Product specification Inverter 74AHC1GU04 FEATURES • Symmetrical output impedance QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.

Contextual Info: TOSHIBA MG150Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

transistor JSW

Abstract: toshiba srf
Contextual Info: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

Contextual Info: T O S H IB A MG150Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 50Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage

transistor JSW

Abstract: jSw Diode
Contextual Info: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

Contextual Info: T O SH IB A MG100Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 00Q2YS50 HIGH POWER SWITCHING APPLICATIONS U nit in mm M O TOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= O .Z /u s Max. ( Inductive Load Low Saturation Voltage : VCE (sat) =3.6V (Max.)

Contextual Info: ENGINEERED O^ W NENTS CO 73 ]> F |-3 3 3 3 S fl3 ' GCIDDbDl □ f ~ T -S l- tf lowprofil6 T’ L COMPATIBLE PROGRAMMABLE PULSE GENERATOR MODULE # # # # # # T ^ L input and outputs Pulse widths stable and precise 1 4 —pin DIP package .240 high Available in step resolutions from 1ns to 50ns

programmable pulse generator

Abstract: 3333-S
Contextual Info: ENGINEERED O^ W NENTS CO 73 ]> F |-3 3 3 3 S fl3 ' GCIDDbDl □ f ~ T -S l- tf lowprofil6 T’ L COMPATIBLE PROGRAMMABLE PULSE GENERATOR MODULE # # # # # # T ^ L input and outputs Pulse widths stable and precise 1 4 —pin DIP package .240 high Available in step resolutions from 1ns to 50ns

TLP3062A

Contextual Info: T O SH IB A TLP3061 S ,TLP3062(S),TLP3063(S) TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TLP306KS), TLP3062ÍS), TLP3063(S) Unit in mm OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVER <;ni in 3 2 1 TI TF IT s t a t f rfi a y JJ U LL The TOSHIBA TLP3061 (S), TLP3062 (S) and TLP3063 (S) consist of

CSB300D

Abstract: SKmbt PB212 PD7566 P017H IC 742 7500B HT 648 Decoder Rx IC-6786 UPD7564CS
Contextual Info: M o s a u f t m f t M O S In te g ra te d C irc u it /¿PD7566 /¿PD7566Ü, u PD7500xU-xV>Tfëffif te<aiiT', t f - h*fe£«i> L T d ^ { 7 > '« u - * A * * n * L i f c . ^PD7566ii, • * £ • , h 7 ^ 7 ^ L E D f c E S I i f t n r t g f r a i # * « * , -*X ^ • * 7 x a >13 £ o T # f t A/Ü

npn 1000V 100a

Abstract: D7ST1008 1S697 D7ST100805 D7ST1010 D7ST1012 50c020
Contextual Info: -p W Ê R Ë X DE i T S T H t i S l IN C " m tÊ B sx. v f f U I X t A A IN O y o u Æ o / ' b ü aD02b7S T | TT _- 3333-1] R 5 D7ST1008, D7ST1010, D7ST1012 Tentative Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 NPN Power Switching

Contextual Info: ENGINEERED COMPONENTS C bOE D 3333263 000060? 454 • EGC tozv profile T 2!. COM PATIBLE 10-TAP OGIC MODULE # T2L input and outputs # Delays stable and precise # 8-pin DIP package # Leads - thru-hoie, J, Gull Wing or Tucked # Available in delays from 10 to 500ns

DMN3030LFG

Contextual Info: DMN3030LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Green Product Summary Features V BR DSS RDS(ON) Package 30V 18mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V POWERDI 3333-8 • ID TA = +25°C 8.6A 5.5A Low RDS(ON) – ensures on state losses are minimized 

Contextual Info: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 650V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically

Contextual Info: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 30V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically

Contextual Info: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Features Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 650V 15mΩ @ VGS = 4.5V • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically

DMN3030LFG-7

Contextual Info: DMN3030LFG Product Summary Features V BR DSS RDS(ON) Package 650V 18mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V POWERDI 3333-8 • • ID TA = +25°C 8.6A 5.5A Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher

Contextual Info: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 30V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically

3,6v sl-386

Abstract: transistor SL-100 tda 9592 FD6S ao21 KG80 KGM80 equivalent transistor S 2000N CL 473 kt 501
Contextual Info: D • A • T • A • B • O • O • K KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library April 1997 V SAMSUNG SAMSUNG ASIC KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior

SCG12

Abstract: SL 220 std150hs ND3B LD2D2
Contextual Info: Internal Macrocells 3 Contents Overview . 3-1 Summary Tables. 3-2

TDA 7378

Abstract: TDA 7822 block diagram baugh-wooley multiplier tda 12062 equivalent for tda 4858 ic free transistor equivalent book STD-80 4856 a 14 PIN DIP W908 LSI CMOS Technology
Contextual Info: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior