TF 227 10A Search Results

BUX48

Abstract: TRANSISTOR BIPOLAR 400V 20A 10a 400v bipolar transistor BUX48A
Contextual Info: BUX48 High Power Bipolar Transistor High Voltage Switching Features: • Collector-Emitter sustaining voltageVCEO sus = 400V (Minimum) - BUX48 = 450V (Minimum) - BUX48A. • Collector-Emitter saturation voltageVCE(sat) = 1.5V (Maximum) at IC = 10A for BUX48

IXGH10N300

Abstract: 1200v 30A to247 20A400 ixys ixgh10n300
Contextual Info: Advance Technical Information IXGH10N300 High Voltage IGBT VCES = 3000V = 10A IC90 VCE sat ≤ 3.5V For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings VGES

Contextual Info: Advance Technical Information High Voltage IGBT VCES = 3000V IC90 = 10A VCE sat ≤ 3.5V IXGH10N300 For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings VGES

2a 250v 130c

Contextual Info: CEMENT THERMAL FUSIBLE RESISTORS • Self extinguishing • Excellent flame and moisture resistance • Extremely small and mechanically safe • Provides outstanding feature against surges • Too low or too high ohmic values on Wire-wound & Power Film type can be supplied on a case to

Contextual Info: CEMENT THERMAL FUSIBLE RESISTORS • Self extinguishing • Excellent flame and moisture resistance • Extremely small and mechanically safe • Provides outstanding feature against surges • Too low or too high ohmic values on Wire-wound & Power Film type can be supplied on a case to

thermal fuse 125 250V 2A

Abstract: TC ROYALOHM 05S2 ROYALOHM DL002
Contextual Info: ROYALOHM Cement Thermal Fusible Resistors Performance Specification Temperature Coefficient <20Q: ±400PPM/°C; >20Q: +350PPM/°C Short Time Overload ± 5.0% + 0.05i2 Max, with no evidence of mechanical damage. Dielectric Withstanding Voltage No evidence of flashover, mechanical damage, arcing or Insulation breakdown.

power switching 10 amp 60V

Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
Contextual Info: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor, designed for automotive ignition, switching regulator and motor applications. Features: • Continuous Collector Current - IC = 10A. • Collector-Emitter Sustaining Voltage VCEO sus = 400V (Minimum).

2N6438

Contextual Info: 2N6438 Power Transistor Designed for use in industrial power amplifiers and switching circuit applications. Features: • High DC Current Gain. • hFE = 20 - 80 at IC = 10A = 12 Minimum at IC = 25A. • Low Collector-Emitter Saturation Voltage. VCE(sat) = 1.0V (Maximum) at IC = 10A, IB = 1.0A.

20-nsec

Abstract: Tf 227 10A
Contextual Info: ^ A General NPN 2^* Semiconductor Industries, Inc. TRAN SISTO R CHIP " 35 2 " DIODE & TRANSISTOR CHIPS 15 AMP Ultra Fast Switching Bonding Pad Areas Base 1 1 7 2 x 2 3 .7 mils Emitter (1 )1 5 7 .5 x 26 mils Front Metallization: Aluminum Back Metallization:

HX8353D

Abstract: HX8353
Contextual Info: DATA SHEET DOC No. HX8353-D-DS HX8353-D 132RGB x 162 dots, 262K color, with Internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 Apr, 2010 HX8353-D 132RGB x 162 dot, 262K Color, with Internal GRAM, TFT Mobile Single Chip Driver List of Contents

NTE130

Abstract: NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192
Contextual Info: N T E ELECTRONICS INC S2E D • b M B l S S ^ a D O S S I 6 024 B I N T E TRANSI5TÖ BS-6U PO LA B T —33—01 Maximum Breakdown Voltage Collector to Base Volts) Collector to Emitter (Volts) Emitter Io Basa (Volts) Typical Forward Current Gain Maximum Collector

NTE135A

Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
Contextual Info: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.

Contextual Info: RQ1E100XN Nch 30V 10A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 10.5mW ID 10A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.

Contextual Info: RQ1E100XN Nch 30V 10A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 10.5mW ID 10A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.

Contextual Info: RQ1E100XN Datasheet Nch 30V 10A Power MOSFET lOutline VDSS 30V RDS on (Max.) 10.5mW ID 10A PD 1.5W lFeatures (8) (7) (6) (5) TSMT8 (1) (2) (3) (4) lInner circuit 1) Low on - resistance. (1) Source (2) Source (3) Source (4) Gate 2) Built-in G-S Protection Diode.

251C

Abstract: 2SB1156 2SD1707
Contextual Info: Power Transistors 2SB1156 2SB1156 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2S D 1707 U nit : ram 5 2 max. . 15.5max- • Features ' 6.9m in. "U.2 • Low collector-eim itter saturation voltage VcEisao • Good linearity of DC c u rre n t gain (hFE)

NTE130

Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd *T 4 30 Min 8 150 80 (CER) 5 20 Min 50* 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)

Contextual Info: SGL10N60RUFD CO-PAK IGBT FEATURES * Short Circuit rated 10uS @ T c = 1 0 0 "C * High S peed Switching * Low Saturation V olatge : V CE sat = 1.95 V @ lc = 1 0 A * High Input Im pedance * C O -P A K , IG B T with F R D :T r r = 4 2 n S (Typ) APPLICATIONS *

2SK3599-01MR

Contextual Info: 2SK3599-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

Contextual Info: 2SK3598-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

Contextual Info: 2SK3600-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)

2sk3601

Abstract: 2SK3601-01
Contextual Info: 2SK3601-01 FUJI POWER MOSFET FUJI POWER MOS FET MOSFET N-CHANNEL SILICON POWER Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照

EIA-541

Abstract: IRF7751
Contextual Info: PD - 94002 IRF7751 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier

MJ10004

Abstract: MJ-10004 OB 2268 darlington power transistor 10a
Contextual Info: MJ10004 Darlington Power Transistor Switchmode series NPN Silicon Power Darlington Transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line