TEXA10X Search Results

AN620

Abstract: M27C801 PDIP32 PLCC32 TSOP32 VA10
Contextual Info: M27C801 8 Mbit 1 Mb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACC ESS TIME: 45 ns ■ LOW POWER CONSUMPTION: - Active Current 3 5 m A a t5 M H z - Standby Current 100|jA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100|^s/byte (typical)

Contextual Info: M27C320 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM PRELIMINARY DATA 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 80ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 32 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Stand-by Current 100µA

11PROGRAMMING

Abstract: 4606 IC circuit diagram ad 4606 m27c512 PLCC32 J-STD-020B M27C512 PDIP28 PLCC32 EPROM M27C512
Contextual Info: M27C512 512 Kbit 64K x8 UV EPROM and OTP EPROM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V

M27C801

Abstract: PDIP32 PLCC32 TSOP32
Contextual Info: M27C801 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: 32 32 – Active Current 35mA at 5MHz – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 50µs/word

M27C512

Abstract: M27V512 M27W512 PDIP28 PLCC32
Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM NOT FOR NEW DESIGN LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

M27V320

Abstract: Q15A TSOP48 0.5 Q15-Q8
Contextual Info: M27V320 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM • 3.3V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 32 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION – Active Current 30mA at 5MHz – Standby Current 60µA

TSOP48 outline

Abstract: M27C320 Q15A
Contextual Info: M27C320 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 80ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 32 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Stand-by Current 100mA

M27C801

Abstract: M27V801 M27W801 PLCC32 TSOP32
Contextual Info: n=Z SCS-THOMSON ^ 7 # , RfilDÊlMSJlilLIlÊ'inEORODtgS M27V801 LOW VOLTAGE 8 Megabit 1 Meg x 8 UV EPROM and OTP EPROM N O T F O R N E W D E S IG N • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns ■ LOW POWER “CMOS” CONSUMPTION:

Contextual Info: M27W801 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 80ns at VCC = 3.0V to 3.6V 32 32 – 100ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C801 ■ LOW POWER CONSUMPTION: 1

M27C322

Abstract: PDIP42 Q0-Q15
Contextual Info: M27C322 32 Mbit 2Mb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 80ns ■ WORD-WIDE CONFIGURABLE ■ 32 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION 42 42 – Active Current 50mA at 5MHz 1 1 – Stand-by Current 100µA

M27C801

Abstract: PDIP32 PLCC32 TSOP32 AI01814
Contextual Info: M27C801 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: 32 32 – Active Current 35mA at 5MHz – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 50µs/word

M27V801

Abstract: M27W801 PDIP32 PLCC32 TSOP32 OBA3
Contextual Info: M27V801 8 Mbit 1Mb x 8 Low Voltage UV EPROM and OTP EPROM NOT FOR NEW DESIGN • M27V801 is replaced by the M27W801 ■ 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION: 32 32 – Active Current 15mA at 5MHz 1 1 – Standby Current 20µA

M27512

Abstract: 1N914
Contextual Info: M27512 NMOS 512K 64K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V

M27C801

Abstract: 1N914 JESD97 PDIP32 PLCC32 tEXA10X
Contextual Info: M27C801 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM Features • 5 V ± 10% supply voltage in Read operation ■ Access time: 55 ns ■ low Power Consumption: – Active current: 35 mA at 5 MHz – Standby current: 100 µA ■ Programming voltage: 12.75 V ± 0.25 V

STMicroelectronics date CODE m27

Contextual Info: M27C320 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM PRELIMINARY DATA • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 80ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 32 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION – Active Current 70mA at 8MHz

AN-620

Abstract: m27c512 equivalent eprom programming
Contextual Info: AN620 APPLICATION NOTE ON-BOARD PROGRAMMING OF OTP EPROM by Franco MORANDI In recent years interest has been growing in On-Board Programming of OTP EPROM memories. There are two main factors which have stimulated this interest: the growth of the FLASH Memory market and the

Contextual Info: M27V801 LOW VOLTAGE 8 Megabit 1Meg x 8 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns LOW POWER “CMOS” CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V 32 1 FDIP32W (F)

ST m27c512

Abstract: M27C512 M27C512-70C6 M27C512-90B6 M27C512-90C1 PDIP28 PLCC32 M27C512 ST
Contextual Info: M27C512 512 Kbit 64K x8 UV EPROM and OTP EPROM Features • 5V ± 10% supply voltage in read operation ■ Access time: 45 ns ■ Low power “CMOS” consumption: – Active current 30 mA – Standby current 100 µA ■ Programming voltage: 12.75 V ± 0.25 V

M27V512

Abstract: M27W512 PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM NOT FOR NEW DESIGN • M27V512 is replaced by the M27W512 ■ 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: 28 28 – Active Current 10mA at 5MHz ■

M27C322

Abstract: M27V322 PDIP42 Q0-Q15 AN620
Contextual Info: M27V322 32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM • ■ 3.3V ± 10% SUPPLY VOLTAGE in READ OPERATION READ ACCESS TIME – 100ns at VCC = 3.0V to 3.6V ■ PIN COMPATIBLE WITH M27C322 ■ WORD-WIDE CONFIGURABLE ■ 32 Mbit MASK ROM REPLACEMENT ■

M27C801

Abstract: PLCC32 TSOP32
Contextual Info: M27C801 8 Megabit 1Meg x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 52sec.

27C801

Abstract: TA10E
Contextual Info: SGS-THOMSON DfflOülLimTnMIIÊi M 27W 801 8 Mbit 1 Mb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST ACCESS TIME: - 70ns at Vcc = 3.0V to 3.6V - 80ns at Vcc = 2.7V to 3.6V ■ LOW POWER CONSUMPTION: - Active Current 15mA

TSOP32 Package

Abstract: FDIP32WC JESD97 M27C801 M27W801 PDIP32 PLCC32 TSOP32
Contextual Info: M27W801 8 Mbit 1Mb x8 low voltage UV EPROM and OTP EPROM Feature summary • 2.7V to 3.6V supply voltage in READ operation ■ Access time: – 80ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V ■ Pin compatible with M27C801 ■ Low power consumption:

M27V801

Abstract: M27W801 PDIP32 PLCC32 TSOP32
Contextual Info: M27V801 8 Mbit 1Mb x 8 Low Voltage UV EPROM and OTP EPROM NOT FOR NEW DESIGN • M27V801 is replaced by the M27W801 ■ 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION: 32 32 – Active Current 15mA at 5MHz 1 1 – Standby Current 20µA